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Details, datasheet, quote on part number:FDC658P
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| Part: | FDC658P |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | Single P-channel Logic Level PowerTrench® MOSFET |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FDC658P datasheet File size : 109 kB |
| Request For quote: | Find where to buy FDC658P
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Datasheet text preview:
February 1999
FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Features
-4 A, -30 V. RDS(ON) = 0.050 @ VGS = -10 V RDS(ON) = 0.075 @ VGS = -4.5 V. Low gate charge (8nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
S D D
1
6
8 .65
G D
2
5
SuperSOT
TM
-6
pin 1
D
3
4
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise note
Ratings
Units
VDSS VGSS ID PD
Drain-Source Voltage Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Maximum Power Dissipation
(Note 1a) (Note 1b) (Note 1a)
-30 ±20 -4 -20 1.6 0.8 -55 to 150
V V A
W
TJ,TSTG RJA RJC
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 30
°C/W °C/W
© 1999 Fairchild Semiconductor Corporation
FDC658P Rev.C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current
VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25 C VDS = -24 V, VGS = 0 V TJ = 55 oC VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V
o
-30 -22 -1 -10 100 -100
V mV/oC µA µA nA nA
BVDSS/TJ
IDSS IGSSF IGSSR
Gate - Body Leakage, Forward Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage Gate Threshold VoltageTemp.Coefficient Static Drain-Source On-Resistance
VDS = VGS, ID = -250 µA ID = -250 µA, Referenced to 25 oC VGS = -10 V, ID = -4.0 A TJ = 125 C VGS = -4.5 V, ID = -3.4 A
o
-1
-1.7 4.1 0.041 0.058 0.06
-3
V mV/oC
VGS(th)/TJ
RDS(ON)
0.05 0.08 0.075
ID(on) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD
Notes:
On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Continuous Source Diode Current Drain-Source Diode Forward Voltage
VGS = -10 V, VDS = -5 V VDS = -5V, ID = -4 A VDS = -15 V, VGS = 0 V, f = 1.0 MHz
-20 9 750 220 100
A S pF pF pF 22 25 38 27 12 ns ns ns ns nC nC nC -1.3 A V
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 2)
VDD = -15 V, ID = -1 A, VGS = -10 V, RGEN = 6
12 14 24 16
VDS = -15 V, ID = -4.0 A, VGS = -5 V
8 1.8 3
DRAIN-SOURCE DIODE CHARACTERISTICS
VGS = 0 V, IS = -1.3 A
(Note 2)
-0.76
-1.2
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a. 78oC/W when mounted on a 1 in2 pad of 2oz Cu on FR-4 board. b. 156oC/W when mounted on a minimum pad of 2oz Cu on FR-4 board. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDC658P Rev.C
Typical Electrical Characteristics
20 - ID , DRAIN-SOURCE CURRENT (A)
2 DRAIN-SOURCE ON-RESISTANCE
16
-4.0V
R DS(on) , NORMALIZED
VGS= -10V -6.0V -4.5V
1.8
VGS = -4.0 V
1.6
12
-4.5V
1.4 1.2 1 0.8
-3.5V
8
-5.0V -6.0V -8.0V -10.0V
4
-3.0V
0
0
1 2 3 -VDS , DRAIN-SOURCE VOLTAGE (V)
4
0
4
8 12 - I D , DRAIN CURRENT (A)
16
20
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.6 R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
0.16
1.4
I D = -4A V GS = -10V
R DS(ON) , ON-RESISTANCE (OHM)
ID = -2A
0.12
1.2
0.08
TJ = 125°C
1
0.04
0.8
TJ = 25°C
0.6 -50
0 -25 0 25 50 75 100 T J , JUNCTION TEMPERATURE (°C) 125 150
2
4 6 8 -V GS , GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
20
V DS = -5V
- I D , DRAIN CURRENT (A) 16
TJ = -55°C
125°C 25°C
-IS , REVERSE DRAIN CURRENT (A)
20 10
VGS = 0V TJ = 125°C 25°C
1
12
0.1
-55°C
8
0.01
4
0.001
0
1
2 3 4 5 -VGS , GATE TO SOURCE VOLTAGE (V)
6
0.0001
0
0.2 0.4 0.6 0.8 1 1.2 -VSD , BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDC658P Rev.C
Typical Electrical Characteristics (continued)
10 -VGS , GATE-SOURCE VOLTAGE (V)
3000
I D = -4A
8
-15V
6
CAPACITANCE (pF)
VDS = -5V
-10V
1000
C iss
300
Coss C rss
4
2
100
f = 1 MHz VGS = 0 V
0
0
3
6 9 Q g , GATE CHARGE (nC)
12
15
30 0.1
0.3 1 3 7 -V DS , DRAIN TO SOURCE VOLTAGE (V)
15
30
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
80 30 -ID, DRAIN CURRENT (A) 10 3 1 0.3 0.1 0.03 0.01 0.1
S RD (ON )L IMI T
5
100 us
1m s 10m s 10 0m s 1s
POWER (W)
4
SINGLE PULSE RJA =156°C/W T = 25°C A
3
2
VGS = -10V SINGLE PULSE R JA = 156°C/W TA = 25°C
0.2 0.5 1 2
DC
1
5
10
20
50
0 0.01
0.1
1
10
100
300
-VDS , DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1 TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.5 0.2 0.1 0.05 0.02 0.01 0.005
D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk)
R JA (t) = r(t) * R JA R JA = 156°C/W
t1
t2
TJ - TA = P * R JA (t) Duty Cycle, D = t 1/ t 2
0.00001
0.0001
0.001
0.01
0.1 t 1, TIME (sec)
1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDC658P Rev.C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST® FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
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