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Details, datasheet, quote on part number:FDC697P
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Datasheet text preview:
FDC697P
May 2003
FDC697P
P-Channel 1.8V PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage Power Trench process. It has been optimized for battery power management applications.
Features
· 8 A, 20 V RDS(ON) = 20 m @ VGS = 4.5 V RDS(ON) = 25 m @ VGS = 2.5 V RDS(ON) = 35 m @ VGS = 1.8 V
Applications
· · · Battery management Load Switch Battery protection
· High performance trench technology for extremely low RDS(ON) · Fast switching speed · FLMP SuperSOT-6 package: Enhanced thermal performance in industry-standard package size
G S S S SuperSOT-6
TM
1
S
6 5
Bottom Drain
2 3
4
S FLMP
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
20 ±8
(Note 1a)
Units
V V A W °C
8 40 1.9 1.5 55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
68 111
°C/W
Package Marking and Ordering Information
Device Marking .697 Device FDC697P Reel Size 7'' Tape width 8mm Quantity 3000 units
2003 Fairchild Semiconductor Corporation
FDC697P Rev C1(W)
FDC697P
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on)
TA = 25°C unless otherwise noted
Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA
Min
20
Typ
Max Units
V
Off Characteristics
ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = ±8 V, VG S = 0 V V DS = 0 V 0.4 0.8 2.9 13 18 26 16 40 37 20 25 35 27 12.2 1 ±100 1.5 mV/°C µA nA
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance
ID = 250 µA VDS = VGS, ID = 250 µA, Referenced to 25°C VGS = 4.5 V, ID = 8 A ID = 6.8 A VGS = 2.5 V, VGS = 1.8 V, ID = 5.8 A VGS = 4.5 V, ID = 8 A, TJ =125°C VGS = 4.5 V, VDS = 5 V, VDS = 5 V ID = 8 A
V mV/°C m
ID(on) gF S Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD tr r Qrr
Notes: 1.
OnState Drain Current Forward Transconductance
A S
Dynamic Characteristics
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 10 V, f = 1.0 MHz VGS = 15 mV, VDD = 10 V, VGS = 4.5 V,
V GS = 0 V,
3524 544 254
pF pF pF 32 12 190 69 55 8.4 7.8 ns ns ns ns nC nC nC
f = 1.0 MHz ID = 1 A, RGEN = 6
3.8
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
18 6 119 43
VDS = 10 V, VGS = 4.5 V
ID = 8 A,
39 6 5.6
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward VGS = 0 V, IS = 1.6 A Voltage Reverse Recovery Time IF = 8 A, diF/dt = 100 A/µs Reverse Recovery Charge 1.6
(Note 2)
A V ns nC
0.7 27 16
1.2
RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
68°C/W when mounted on a 1in2 pad of 2 oz copper
b)
111°C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDC697P Rev C1(W)
FDC697P
Dimensional Outline and Pad Layout
Bottom View
Top View
Recommended Landing Pattern
FDC697P Rev C1(W)
FDC697P
Typical Characteristics
40
VGS = 4.5V 3V 2.5V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
3
-ID, DRAIN CURRENT (A)
30
2.5
VGS = -1.8V
20 1.8V 10
2
1.5
-2.5V
-3.0V -3.5V -4.5V
1
0 0 0.5 1 1.5 2 -VDS, DRAIN-SOURCE VOLTAGE (V)
0.5 0 10 20 -ID, DRAIN CURRENT (A) 30 40
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.05 RDS(ON), ON-RESISTANCE (OHM)
1 .4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -8A VGS = -4.5V 1 .2
0.045 0.04 0.035 0.03 0.025 0.02 0.015 0.01 0.005 1 2 3 TA = 25oC TA = 125oC
ID = -4 A
1
0.8 -50 -2 5 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation withTemperature.
40
VDS = -5V -IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10 VGS = 0V 1 TA = 125 C 25 C
o o
-ID, DRAIN CURRENT (A)
30
0.1
20
TA = 125oC
0.01
-55oC
10
25oC -55oC
0.001
0.0001
0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDC697P Rev C1(W)
FDC697P
Typical Characteristics
5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -8A 4 CAPACITANCE (pF) -15V 3 VDS = -5V -10V
5000 4500 4000 3500 3000 2500 2000 1500 1000 500 CRSS 0.0 5.0 10.0 15.0 20.0 C OSS CISS f = 1MHz VGS = 0 V
2
1
0 0 10 20 30 40 50 Qg, GATE CHARGE (nC)
0 -VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W) 50
Figure 8. Capacitance Characteristics.
RDS(ON) LIMIT 1ms -ID, DRAIN CURRENT (A) 10 100ms 1s 1 10s DC VGS = -4.5V SINGLE PULSE o RJA = 100 C/W TA = 25oC 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 10ms
40
SINGLE PULSE RJA = 100°C/W TA = 25°C
30
20
0.1
10
0 0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0 .2
0.1
R JA(t) = r(t) * R JA R JA = 100 °C/W P (p k ) t1 t2 T J - T A = P * R JA (t ) D uty Cycle, D = t 1 / t2
0.1 0.05 0.02
0.01
0.01
S IN G LE PULSE
0.001 0.001
0.01
0. 1
1 t1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDC697P Rev C1(W)
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