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Details, datasheet, quote on part number:FDC796N
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Datasheet text preview:
FDC796N
November 2002
FDC796N
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
· 12.5 A, 30 V. RDS(ON) = 9 m @ VGS = 10 V RDS(ON) = 12 m @ VGS = 4.5 V · High performance trench technology for extremely low RDS(ON) · Low gate charge · High power and current handling capability · Fast switching speed.
Applications
· DC/DC converter · Power management · Load switch
Bottom Drain
G S S S SuperSOT-6
TM
1
S
6 5 4
2 3
S FLMP
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation
TA=25 C unless otherwise noted
o
Parameter
Ratings
30 ± 16
(Note 1a)
Units
V A W °C
12.5 40 1.8 1.1 -55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
68 111
°C/W
Package Marking and Ordering Information
Device Marking .796 Device FDC796N Reel Size 7'' Tape width 8mm Quantity 3000 units
2002 Fairchild Semiconductor Corporation
FDC796N Rev C (W)
FDC796N
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) ID(on) gF S Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD tr r Qrr
Notes: 1.
TA = 25°C unless otherwise noted
Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = ±16 V, VG S = 0 V V DS = 0 V
Min
30
Typ
Max Units
V
Off Characteristics
25 10 ±100 1 2 5.6 7.4 9.5 9 20 48.4 1444 342 135 VGS = 15 mV,
(Note 2)
mV/°C µA nA
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource On Resistance OnState Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C ID = 12.5 A VGS = 10 V, ID = 11 A VGS = 4.5 V, VGS = 10 V, ID = 12.5 A, TJ=125°C VGS = 10 V, V DS = 5 V VDS = 10 V, VDS = 15 V, f = 1.0 MHz ID = 12.5 A V GS = 0 V,
3
V mV/°C
9 12 16
m
A S pF pF pF 20 7.6 42 23 20 ns ns ns ns nC nC nC
Dynamic Characteristics
f = 1.0 MHz ID = 1 A, RGEN = 6
1.25 10 3.8 26 13
Switching Characteristics
VDD = 15 V, VGS = 10 V,
VDS = 15 V, VG S = 5 V
ID = 12.5 A,
14 4 5
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 1.5 A
(Note 2)
1.5 0.73 25 15 1.2
A V nS nC
IF = 12.5 A, diF/dt = 100 A/µs
RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
68°C/W when mounted on a 1in2 pad of 2 oz copper
b)
111°C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDC796N Rev C (W)
FDC796N
Typical Characteristics
50
2.4 6.0V 4.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 4.5V 2.2 2 1.8 1.6 1.4 1.2 1 0.8
0 0.5 1 1.5
ID, DRAIN CURRENT (A)
40
VGS = 3.5V
3.5V
30
4.0V 4.5V 5.0V 6.0V 10V
20
10
3.0V
0 VDS, DRAIN-SOURCE VOLTAGE (V)
0
10
20
30
40
50
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.024 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 12.5A VGS = 10V 1.4
ID = 6.3 A
0.02
1.2
0.016
TA = 125oC
0.012
1
0.8
TA = 25oC
0.008
0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)
0.004 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
50
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 VGS = 0V 10 1 0.1 -55oC 0.01 0.001 0.0001 TA = 125oC 25oC
VDS = 5V
ID, DRAIN CURRENT (A) 40
30
20
TA = 125oC 25oC
10
-55oC
0 1. 5 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V)
IS, REVERSE DRAIN CURRENT (A)
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDC796N Rev C (W)
FDC796N
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 12.5A 8 20V 6 CAPACITANCE (pF) VDS = 10V 15V
2000 CISS f = 1MHz VGS = 0 V
1600
1200
4
800 COSS 400 CRSS
2
0 0 5 10 15 20 25 30 Qg, GATE CHARGE (nC)
0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
Figure 8. Capacitance Characteristics.
50
10µs ID, DRAIN CURRENT (A) 10 RDS(ON) LIMIT 100µs 1ms 10ms 100ms 1s 10s DC
40
SINGLE PULSE RJA = 111°C/W TA = 25°C
30
1 VGS = 10V SINGLE PULSE RJA = 111oC/W TA = 25oC 0.01 0.01 0.1 1
20
0.1
10
10
100
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) * RJA RJA = 111 °C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.1
0.1 0.05 0.02
0.01
0.01 SINGLE PULSE
0.001 0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDC796N Rev C (W)
FDC796N
Dimensional Outline and Pad Layout
FDC796N Rev C (W)
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