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Details, datasheet, quote on part number:FDD5690
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| Part: | FDD5690 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | 60V N-channel PowerTrench® MOSFET |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FDD5690 datasheet File size : 174 kB |
| Request For quote: | Find where to buy FDD5690
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Datasheet text preview:
FDD5690
December 2002
FDD5690
60V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features 30 A, 60 V. RDS(ON) = 0.027 @ VGS = 10 V
RDS(ON) = 0.032 @ VGS = 6 V.
Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely
low RDS(ON).
D
D G S
TO-252 Ab s o lu te Maximum Ratings
S ym b o l
V DSS V GSS ID D ra in -S o u rc e Voltage G a te -S o u rc e Voltage M a xim u m Drain Current M a xim u m Drain Current PD -Continuous -Pulsed
(Note 1) (Note 1a) (Note 1b) (Note 1) (Note 1a)
G
S
T C = 2 5 C unless otherwise noted
o
P a ra m e te r
R a tin g s
60 ±20 30 9 10 0 50 3 .2 1 .3 -5 5 to +150
U n it s
V V A
M a xim u m Power Dissipation @ T C = 25 o C T A = 25 o C T A = 25 o C
W
T J , T s tg
O p e ra tin g and Storage Junction Temperature Range
°C
T h e r m a l Characteristics
R J C R J A T h e rm a l Resistance, Junction-to- Case T h e rm a l Resistance, Junction-to- Ambient
(Note 1) (Note 1a) (Note 1b)
2 .5 40 96
°C /W °C /W °C /W
P a c k a g e Marking and Ordering Information
D e v ic e Marking FDD5690 D e v ic e FDD5690 R e e l Size 1 3 '' T a p e width 16m m Q u a n ti ty 25 00
2 0 0 2 Fairchild Semiconductor Corporation
FDD5690, Rev. C
FDD5690
Electrical Characteristics
Symbol
W DSS IAR BVDSS BVDSS TJ IDSS I GSSF I GSSR
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
90 30 mJ A V m V / °C 1 100 -100 µA nA nA
Off Characteristics
Single Pulse Drain-Source VDD = 30 V, ID = 30 A Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
VGS = 0 V, ID = 250 µA ID = 250µA, Referenced to 25°C VDS = 48 V, VGS = 0 V VGS = 20V, VDS = 0 V VGS = -20 V, VDS = 0 V
60 57
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 µA ID = 250 µA,Referenced to 25°C VGS = 10 V, ID = 9 A VGS = 10 V, ID = 9 A, TJ = 125°C VGS = 6 V, ID = 8 A VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 9 A
2
2.5 -6 0.023 0.032 0.026
4
V m V / °C
0.027 0.048 0.032
ID(on) gFS
25 24
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 25 V, VGS = 0 V f = 1.0 MHz
1110 150 75
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 30 V, ID = 1 A VGS = 10 V, RGEN = 6
10 9 24 10
18 18 39 18 32
ns ns ns ns nC nC nC
VDS = 30 V, ID = 9 A VGS = 10 V,
23 4 6.8
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A
(Note 2)
2.3 0.75 1.2
A V
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab. RJC is guaranteed by design while RCA is determined by the user's board design.
on a 1in2 pad of 2oz copper.
a) RJA= 40oC/W when mounted
b) RJA= 96oC/W on a minimum m o u n t i n g pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDD5690, Rev. C
FDD5690
Typical Characteristics
60 ID, DRAIN-SOURCE CURRENT (A) VGS = 10V 50 40 30 20 4.0V 10 0 0 1 2 3 4 5 6.0V 5.0V
2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 0 10 20 30 40 50 60 VGS = 4.5V 5.0V
4.5V
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.08 RDS(ON), ON-RESISTANCE (OHM)
2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1. 8 1. 6 1. 4 1. 2 1 0. 8 0. 6 0. 4 -50 - 25 0 25 50 75 100
o
ID = 9A VGS = 10V
ID = 15A
0.06
o
TA = 125 C 0.04
0.02
TA = 25 C
o
0
125 150
3
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
60 VDS = 5V 50
o
100
TA = -55 C 125 C
o
VGS = 0V
25 C
o
10 TA = 125 C 1 25 C
o o
40 30 20 10 0 2 3 4 5 6
0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6
-55 C
o
0.8
1
1.2
1.4
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDD5690, Rev. C
FDD5690
Typical Characteristics
(continued)
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 9A 8 VDS = 10V 30V 20V
2500 f = 1MHz VGS = 0 V 2000 CISS
6
1500
4
1000
2
500 COSS CRSS 0 10 20 30 40 50 60
0 0 5 10 15 20 25
0
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
RDS(ON) LIMIT 1ms 10ms
100µs
60 SINGLE PULSE RJA = 96 C/W TA = 25 C POWER (W) 40
o o
ID, DRAIN CURRENT (A)
10
100ms 1S
1 DC 0.1 VGS = 10V SINGLE PULSE RJA = 96 C/W TA = 25 C 0.01 0 .1 1
o o
10S
20
0
10
100
0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1 TRANSIENT THERMAL RESISTANCE
D = 0.5 0.2 r(t), NORMALIZED EFFECTIVE
0.1
0.1 0.05 0.01
R JA (t) = r(t) * R JA R JA = 96°C/W
0.02 Single Pulse P(pk)
0.01
t1
t2
0.001
TJ - TA = P * R JA (t) Duty Cycle, D = t 1 / t 2
0.0001 0.0001
0.001
0.01
0.1 t , TIME (sec) 1
1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design.
FDD5690, Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrenchâ MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERâ OPTOLOGICâ SMART START OPTOPLANAR
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I1
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