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Details, datasheet, quote on part number:FDD6035AL
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FDD6035AL FDD6690A
September 2001
FDD6035AL
N-Channel, Logic Level, PowerTrench MOSFET
General Description
This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.
Features · 46 A, 30 V. RDS(ON) = 0.0125 @ VGS = 10 V
RDS(ON) = 0.016 @ VGS = 4.5 V.
· Low gate charge (17nC typical). · Fast switching speed.
Applications · DC/DC converter · Motor drives
· High performance trench technology for extremely
low RDS(ON).
D
G S
TO-252
D
G
S
TA=25 C unless otherwise noted
o
Absolute Maximum Ratings
Sym b o l
V DS S V G SS ID Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current PD - Continuous - Pulsed
P a r a m e te r
R a t in g s
30
(Note 1) (Note 1a)
U n it s
V V A
± 20 46 12 100 50 2.8 1.3 -55 to +150
Maximum Power Dissipation @ TC = 25oC TA = 25oC TA = 25oC
(Note 1) (Note 1a) (Note 1b)
W
T J, T stg
Operating and Storage Junction Temperature Range
°C
Therm al Characteristics
R JC R JA Therm al Resistance, Junction-to-Case Therm al Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
2.5 96
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDD6035AL
2 0 0 1 Fairchild Semiconductor Corporation
Device FDD6035AL
Reel Size 13''
Tape width 16mm
Q u a n ti ty 2500
FDD6035AL, Rev. A
FDD6035AL FDD6690A
Electrical Characteristics
Symbol
WDSS IAR
TA = 25°C unless otherwise noted
Parameter
(Note 1)
Test Conditions
Min
Typ
Max
180 12
Units
mJ A
Drain-Source Avalanche Ratings
Single Pulse Drain-Source Avalanche VDD = 15 V, ID = 12 A Energy Maximum Drain-Source Avalanche Current VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 20V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 12 A VGS = 10 V, ID = 12 A,TJ=125°C VGS = 4.5 V, ID =10 A VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 12 A 1 1.6 -4 .0009 .0015 .0120 50 44
Off Characteristics
BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on) Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
30 25 1 100 -100 3
V mV/°C µA nA nA V mV/°C 0.0125 0.019 0.016
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
ID(on) gFS
On-State Drain Current Forward Transconductance
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, VGS = 0 V, f = 1.0 MHz
1700 340 140
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6
10 12 35 10
18 22 56 18 23
ns ns ns ns nC nC nC
VDS = 15 V, ID = 12 A, VGS = 5 V,
17 5 6
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A(Note 2) 0.72 2.3 1.3 A V
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab. RJC is guaranteed by design while RCA is determined by the user's board design.
a) RJA= 45oC/W when mounted on a 1in2 pad of 2oz copper.
b) RJA= 96oC/W on a minimum mounting pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDD6035AL, Rev. A
FDD6035AL FDD6690A
Typical Characteristics
40 VGS = 10V 30 3.5V 20 6.0V 4.5V 3.0V
2.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8
0 0.5 1 1.5 2 2.5 3
ID, DRAIN-SOURCE CURRENT (A)
VGS = 3.0V
3.5V 4.0V 4.5V 5.0V 7.0V 10V
10 2.5V 0 VDS, DRAIN-SOURCE VOLTAGE (V)
0
10
20 ID, DRAIN CURRENT (A)
30
40
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.04 RDS(ON), ON-RESISTANCE (OHM)
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50
ID = 12A VGS = 10V
ID = 6 A 0.035 0.03 0.025 0.02 0.015 0.01 0.005 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
o
TA = 125 C
o
TA = 25 C
-2 5
0
25
50
75
100
o
125
150
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
40 35 ID, DRAIN CURRENT (A) 30 25 20 15 10 5 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 C
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
25 C 125 C
o
o
VGS = 0V 10 1 0.1 -55 C 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V)
o
TA = 125 C 25 C
o
o
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDD6035AL, Rev. A
FDD6035AL FDD6690A
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 12A 8
(continued)
VDS = 5V 15V
2500
10V
2000 CAPACITANCE (pF) CISS 1500
f = 1MHz VGS = 0 V
6
4
1000
2
500 COSS CRSS 0 5 10 15 20 25 30
0 0 5 10 15 20 25 30 35 Qg, GATE CHARGE (nC)
0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
100 100µs 1ms 10ms 100ms 1S 10S DC VGS = 10V SINGLE PULSE RJA = 96 C/W TA = 25 C 0.01 0. 01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V)
o o
60 SINGLE PULSE RJA = 96 C/W POWER (W) 40 TA = 25 C
o o
ID, DRAIN CURRENT (A)
10
RDS(ON) LIMIT
1
20
0.1
0 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1 TRANSIENT THERMAL RESISTANCE
D = 0.5 0.2 r(t), NORMALIZED EFFECTIVE
0.1
0.1 0.05 0.01
R JA (t) = r(t) * R JA R JA = 96°C/W
0.02 Single Pulse P(pk)
0.01
t1
0.001
t2
TJ - TA = P * R JA (t) Duty Cycle, D = t 1 / t 2
0.0001 0.0001
0.001
0.01
0.1 t , TIME (sec) 1
1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design.
FDD6035AL, Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLT TM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST ® FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench ® QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER ®
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET ®
VCXTM
STAR*POWER is used under license
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Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4
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