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Details, datasheet, quote on part number:FDD603AL
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| Part: | FDD603AL |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | N-channel Logic Level Enhancement Mode Field Effect Transistor |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FDD603AL datasheet File size : 113 kB |
| Request For quote: | Find where to buy FDD603AL
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Datasheet text preview:
FDD603AL
July 1999
FDD603AL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance. These devices are particularly suited for low voltage applications such as DC/DC converters a n d high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features 33 A, 30 V. RDS(ON) = 0.023 @ VGS = 10 V
RDS(ON) = 0.037 @ VGS = 4.5 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged avalanche-rated internal source-drain diode
can eliminate the need for external Zener Diode.
Applications DC/DC converters Motor drives
High density cell design for extremely low RDS(ON) .
D
D G S
TO-252
Ab s o lu te Maximum Ratings
S ym b o l
V DSS V GSS ID D ra in -S o u rc e Voltage G a te -S o u rc e Voltage M a xim u m Drain Current - Continuous M a xim u m Drain Current PD T A = 25°C -Pulsed T A = 25 o C T A = 25 o C T J , T s tg
(Note 1) (Note 1a) T C = 2 5 oC unless otherwise noted
G
S
P a ra m e te r
R a t in g s
30 ±20 33 9 .5 80
(Note 1) (Note 1a) (Note 1b)
U n it s
V V A
M a xim u m Power Dissipation @ T C = 25 o C
39 3 .2 1 .3 -5 5 to +150
W
O p e ra tin g and Storage Junction Temperature Range
°C
T h e r m a l Characteristics
R J C R J A T h e rm a l Resistance, Junction-to-Case T h e rm a l Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
2 .5 40 96
° C /W ° C /W ° C /W
P a c k a g e Marking and Ordering Information
D e v ic e Marking FDD603A L
1 9 9 9 Fairchild Semiconductor Corporation
D e v ic e FDD603A L
R e e l Size 1 3 ''
T a p e W i d th 16m m
Q u a n ti ty 250 0
FDD603AL, Rev. B
FDD603AL
Electrical Characteristics
Symbol
W DSS IAR BVDSS BVDSS TJ IDSS I GSSF I GSSR
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
100 12 mJ A V mV/°C 10 100 -100 µA nA nA
Off Characteristics
Single Pulse Drain-Source VDD = 15 V, ID = 12 A Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
VGS = 0 V, ID = 250 µA ID = 250µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 20V, VDS = 0 V VGS = -20 V, VDS = 0 V
30 32
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 µA ID = 250 µA,Referenced to 25°C VGS = 10 V, ID = 9.5 A VGS = 10 V, ID = 9.5 A,TJ=125°C VGS = 4.5 V, ID = 7.5 A VGS = 10 V, VDS = 10 V VDS = 10 V, ID = 9.5 A
1
1.7 -4.5 0.016 0.024 0.026
3
V mV/°C
0.023 0.035 0.037
ID(on) gFS
60 18
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, VGS = 0 V f = 1.0 MHz
670 345 95
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 15 V, ID = 1 A VGS = 10 V, RGEN = 6
10 16 27 12
20 30 45 22 26
ns ns ns ns nC nC nC
VDS =10 V, ID = 9.5 A VGS = 10 V,
19 3.5 5.5
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A
( Note 1) (Note 2)
33 0.78 1.2
A V
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab. RJC is guaranteed by design while RCA is determined by the user's board design. RJC has been used to determine some maximum ratings.
a) RJA= 40oC/W when mounted on a 1in2 pad of 2oz copper.
b) RJA= 96oC/W on a minimum m o u n t i n g pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDD603AL, Rev. B
FDD603AL
Typical Characteristics
80 I D , DRAIN-SOURCE CURRENT (A)
3
GS
RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
V
=10V
8.0 7.0 6.0
V
2.5
GS
= 4.0V 4.5
60
5.0
40
2
5.0 6.0 7.0 8.0 10
4.5
20
1.5
4.0 3.0
1
0 0 1 V
DS
0.5
2
3
4
5
0
20
40 I D , DRAIN CURRENT (A)
60
80
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.1
R DS(ON) , ON-RESISTANCE (OHM)
1.8 DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50
R DS(ON) , NORMALIZED
I D = 9.5A V GS = 10V
I D = 5A
0.08
0.06
0.04
TJ = 125°C
0.02
25°C
0 2 4 6 8 V GS , GATE TO SOURCE VOLTAGE (V) 10
-25
0
25
50
75
100
125
150
T J, JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
30
I S , REVERSE DRAIN CURRENT (A)
20
VDS = 10V
I D, DRAIN CURRENT (A) 25 20 15 10
VGS = 0V TJ = 125°C
1
25°C
0.1
-55°C
0.01
T = 125°C J
5
25°C -55°C
0.001
0 1 2 3 4 5 V GS , GATE TO SOURCE VOLTAGE (V)
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDD603AL, Rev. B
FDD603AL
Typical Characteristics
(continued)
10 VGS , GATE-SOURCE VOLTAGE (V)
2000
I D = 10A
8
CAPACITANCE (pF)
VDS = 5.0V 10V 20V
1000
Ciss
500
6
Coss
200
4
2
100 60 0.1
f = 1 MHz VGS = 0V
0.3 1 4 10
Crss
0 0 5 10 Q g , GATE CHARGE (nC) 15 20
30
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
200 100 50 I D , DRAIN CURRENT (A) 20 5 1
R
60
) (ON DS
it Lim
1µ s 10 µs 10 0µ s 1m s
10 ms
DC
SINGLE PULSE RJA = 96 C/W TA = 25 C POWER (W) 40
o o
0.1
VGS = 10V SINGLE PULSE o RJC = 3.2 C/W T A = 25 °C
1 3
20
0.01 0.1
0
5
10
30
50
0.01
0.1
1
10
100
1000
V DS , DRAIN-SOURCE VOLTAGE (V))
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
1 TRANSIENT THERMAL RESISTANCE
D = 0.5 0.2 r(t), NORMALIZED EFFECTIVE
Figure 10. Single Pulse Maximum Power Dissipation.
0.1
0.1 0.05 0.02
R JA (t) = r(t) * R JA R JA = 96°C/W
0.01 Single Pulse P(pk)
0.01
t1
t2
0.001
TJ - TA = P * R JA (t) Duty Cycle, D = t 1 / t 2
0.0001 0.0001
0.001
0.01
0 .1 t , TIME (sec) 1
1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design.
FDD603AL, Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST® FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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Preliminary
First Production
No Identification Needed
Full Production
Obsolete
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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
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