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Details, datasheet, quote on part number:FDD6296
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Datasheet text preview:
FDD6296/FDU6296
May 2003
FDD6296/FDU6296
30V N-Channel Fast Switching PowerTrench ® MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. · 50A, 30 V RDS(ON) = 8.8 m @ V GS = 10 V RDS(ON) = 11.3 m @ V GS = 4.5 V
· Low gate charge · Fast switching · High performance trench technology for extremely low RDS(ON)
Applications
· DC/DC converter · Power management
D
G S
D
I-PAK (TO-251AA) GDS
G
DO-252 T -PAK (TO-252)
S
T A=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
V DSS VGSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC =25°C @TA=25°C Pulsed
(Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b)
Ratings
30 ± 20 50 15 100 52 3.8 1.6 55 to +175
Unit s
V A
PD
Power Dissipation
@TC =25°C @TA=25°C @TA=25°C
W
TJ, TS T G
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
2.9 40 96
°C/W
Package Marking and Ordering Information
Device Marking FDD6296 FDU6296 Device FDD6296 FDU2696 Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13'' Tube Tape width 12mm N/A Quantity 2500 units 75
©2003 Fairchild Semiconductor Corporation
FDD6296/FDU6296 Rev B (W)
FDD6296/FDU6296
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
(Note 2)
Min Typ
Max Unit s
165 15 mJ A
Drain-Source Avalanche Ratings
EAS IAS BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on)
Drain-Source Avalanche Energy Drain-Source Avalanche Current DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage
(Note 2)
Single Pulse, V DD = 15 V, ID=15A
Off Characteristics
VGS = 0 V, ID = 250 µA 30 29 1 ± 100 1 1.7 0.5 7.5 9.0 9.3 58 1440 400 140 VGS = 15 mV,
(Note 2)
V mV/°C µA nA V mV/°C m
ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS =± 20 V, VGS = 0 V VDS = 0 V
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge Total Gate Charge GateSource Charge GateDrain Charge
VDS = V GS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 13 A VGS = 10 V, ID = 15 A, TJ =125° C VDS = 5 V, VDS = 15 V, f = 1.0 MHz ID = 15 A V GS = 0 V,
3
8.8 11.3 15.0
gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qg Qgs Qgd IS VS D trr Qrr
S pF pF pF 19 11 46 23 31.5 17 ns ns ns ns nC nC nC nC 3.2 A V nS nC
Dynamic Characteristics
f = 1.0 MHz ID = 15 A, RGEN = 6
1.3 11 6 29 13
Switching Characteristics
VDD = 15 V, VGS = 10 V,
VDS = 15V, ID = 15 A, VGS = 10 V VDS = 15V, ID = 15 A, VGS = 5 V
22.5 12.2 4 3.5
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward VGS = 0 V, IS = 3.2 A Voltage Diode Reverse Recovery Time IF = 15 A, Diode Reverse Recovery Charge di F/dt = 100 A/µs
(Note 2)
0.74 25 13
1.2
FDD6296/FDU6296 Rev. B (W)
FDD6296/FDU6296
Electrical Characteristics (cont'd)
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R JC is guaranteed by design while R CA is determined by the user's board design.
a) RJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper
b) RJA = 96°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: Package current limitation is 21A
PD R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VG S = 10V.
FDD6296/FDU6296 Rev. B (W)
FDD6296/FDU6296
Typical Characteristics
100 VGS=10V ID , D R A I N C U R R E N T ( A ) 80 6.0V 60 4.5V 3.5V 4.0V
1.8 R D S ( O N ) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 3.5V
1.6 4.0V 4.5V 5.0V 6.0V 10V
1.4
40 3.0V
1.2
20
1
0 0 1 2 VD S, DRAIN-SOURCE VOLTAGE (V) 3 4
0.8 0 20 40 60 80 100 ID , DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage
0.025 R D S ( O N ), ON-RESISTANCE (OHM)
1.8 R D S ( O N ) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 I D = 50A VGS = 10V
ID = 25A 0.02
0.015 T A = 125oC 0.01 T A = 25 C
o
0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 T J, JUNCTION TEMPERATURE (oC)
0.005 2 4 6 V GS , GATE TO SOURCE VOLTAGE (V) 8 10
Figure 3. On-Resistance Variation with Temperature
90
IS , R E V E R S E D R A I N C U R R E N T ( A ) 1000
Figure 4. On-Resistance Variation with Gate-to-Source Voltage
VDS = 10V ID , D R A I N C U R R E N T ( A )
100 10 1 0.1 0.01
VGS = 0V
60
TA = 125 o C 25 C -55oC
o
TA =125 C 30 -55 C
o
o
25 C 0 1.5 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V)
o
0.001
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VS D, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature
FDD6296/FDU6296 Rev. B (W)
FDD6296/FDU6296
Typical Characteristics
10 V GS , G A T E - S O U R C E V O L T A G E ( V ) I D = 15A 8 VDS = 10V CAPACITANCE (pF)
1800 f = 1MHz VGS = 0 V Ci s s
1200
6 20V 4
15V
600 C rss 0
Coss
2
0 0 5 10 15 20 25 Qg, GATE CHARGE (nC)
0
5
10
15
20
25
30
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
1000 P ( p k ) , PEAK TRANSIENT POWER (W) RDS(ON) LIMIT I D , DRAIN CURRENT (A) 100 100µs 1ms 10ms 100ms 1s V GS = 10V SINGLE PULSE R JA = 96oC/W T A = 25 C 0.01 0.01 0.1 1 V DS, DRAIN-SOURCE VOLTAGE (V) 10 100
o
Figure 8. Capacitance Characteristics
100 SINGLE PULSE R JA = 96°C/W T A = 25°C
80
10 10s DC
60
1
40
0.1
20
0 0.01 0.1 1 t1 , TIME (sec) 10 100 1000
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power Dissipation
1
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2
R JA (t) = r(t) * RJA R JA = 96 °C/W
0.1
0.1 0.05 0.02 0.0
P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.001 0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDD6296/FDU6296 Rev. B (W)
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