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Details, datasheet, quote on part number:FDD6606
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Datasheet text preview:
FDD6606
February 2004
FDD6606
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
Features
· 75 A, 30 V RDS(ON) = 6 m @ VGS = 10 V RDS(ON) = 8 m @ VGS = 4.5 V · Low gate charge · Fast switching · High performance trench technology for extremely low RDS(ON)
Applications
· DC/DC converter · Motor Drives
D
G S
D
G
DO-252 T -PAK (TO-252)
TA=25oC unless otherwise noted
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
Parameter
Ratings
30 ± 20
(Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b)
Units
V A W
75 100 71 3.8 1.6 55 to +175
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RJC RJA RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
2.1 40 96
°C/W
Package Marking and Ordering Information
Device Marking FDD6606 Device FDD6606 Package D-PAK (TO-252) Reel Size 13'' Tape width 12mm Quantity 2500 units
2004 Fairchild Semiconductor Corporation
FDD6606 Rev B (W)
FDD6606
Electrical Characteristics
Symbol
WDSS IAR BVDSS BVDSS TJ IDSS IGSS
TA = 25°C unless otherwise noted
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current
Test Conditions
Single Pulse, VDD = 15 V, ID = 17 A
Min
Typ
Max
240 17
Units
mJ A
Drain-Source Avalanche Ratings (Note 2)
Off Characteristics
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage
(Note 2)
VGS = 0 V,
ID = 250 µA
30 20 10 ±100
V mV/°C µA nA
ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = ± 20 V, VG S = 0 V V DS = 0 V
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 17 A ID = 15 A VGS = 4.5 V, VGS = 10 V, ID = 17 A, TJ=125°C VGS = 10 V, VDS = 5 V, V DS = 5 V ID = 17 A
1
1.9 7 5 6 8
3
V mV/°C
6.0 8.0 11.9
m
ID(on) gF S Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd
50 65
A S
Dynamic Characteristics
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 15 V, f = 1.0 MHz VGS = 15 mV,
V GS = 0 V,
2400 577 258 1.4
pF pF pF 20 37 64 32 31 ns ns ns ns nC nC nC
f = 1.0 MHz
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
14 VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 12 38 18 VDS = 15V, VG S = 5 V ID = 17 A, 24 10 11
FDD6606 Rev B (W)
FDD6606
Electrical Characteristics (continued)
Symbol
IS VSD tr r Qrr
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
3.2
Units
A V nS nC
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IF = 17 A, IS = 3.2 A
(Note 2)
0.7 32 20
1.2
diF/dt = 100 A/µs
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) RJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper
b) RJA = 96°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as:
PD R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD6606 Rev B (W)
FDD6606
Typical Characteristics
100
2 VGS=10V 4.5V 4.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6
VGS = 3.5V
80 ID, DRAIN CURRENT (A)
60
3.5V
4.0V 1.4 4.5V 1.2 1 0.8 5.0V
40
20
10V
3.0V
0 0 1 2 3 VDS, DRAIN-SOURCE VOLTAGE (V) 4
0
20
40 ID, DRAIN CURRENT (A)
60
80
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.02 RDS(ON), ON-RESISTANCE (OHM)
2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 0.6 -5 0 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC)
ID = 17A VGS = 10V
ID = 8.5A
0.015
TA = 125oC
0.01
TA = 25oC
0.005
0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
80
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
VDS = 5V ID, DRAIN CURRENT (A) 60
10 1 0.1 0.01 0.001
TA = 125 C 25 C -55oC
o o
40
20
TA =125oC
25oC
-55oC 3 4
0 1 2 VGS, GATE TO SOURCE VOLTAGE (V)
0.0001 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature
FDD6606 Rev B (W)
FDD6606
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V)
3500
ID = 17A
8
VDS = 10V 15V 20V
CAPACITANCE (pF) 3000 2500 2000 1500 1000
CISS
f = 1MHz VGS = 0 V
6
4
COSS
2
CRSS
500
0 0 10 20 Qg, GATE CHARGE (nC) 30 40
0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30
Figure 7. Gate Charge Characteristics
1000
P(pk), PEAK TRANSIENT POWER (W) 100
Figure 8. Capacitance Characteristics
ID, DRAIN CURRENT (A)
100 RDS(ON) LIMIT 10 10s DC
100µs 1ms 10ms 100ms 1s VGS = 10V SINGLE PULSE RJA = 96oC/W TA = 25oC
80
SINGLE PULSE RJA = 96°C/W TA = 25°C
60
1
40
0.1
20
0.01 0.01
0.1
1
10
100
0 0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power Dissipation
1
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2
0.1
0.1 0.05 0.02
RJA(t) = r(t) * RJA RJA = 96 °C/W P(pk )
0.01
t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001 0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDD6606 Rev B (W)
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