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Details, datasheet, quote on part number:FDD6612A
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| Part: | FDD6612A |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | 30V N-channel Powertrench MOSFET |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FDD6612A datasheet File size : 197 kB |
| Request For quote: | Find where to buy FDD6612A
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Datasheet text preview:
FDD6612A/FDU6612A
January 2002
FDD6612A/FDU6612A
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.
Features
· 30 A, 30 V RDS(ON) = 20 m @ VGS = 10 V RDS(ON) = 28 m @ VGS = 4.5 V
· Low gate charge (9 nC typical) · Fast Switching · High performance trench technology for extremely low RDS(ON)
Applications
· DC/DC converter · Motor Drives
D
G S
D
I-PAK (TO-251AA) GDS
G
DO -252 T -PAK (TO-252)
S
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C @TA=25°C Pulsed
(Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b)
Ratings
30 ±20 30 9.5 60 36 2.8 1.3 -55 to +175
Units
V V A
PD
Power Dissipation
@TC=25°C @TA=25°C @TA=25°C
W
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RJC RJA RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
3.5 45 96
°C/W °C/W °C/W
Package Marking and Ordering Information
Device Marking FDD6612A FDU6612A Device FDD6612A FDU6612A Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13'' Tube Tape width 12mm N/A Quantity 2500 units 75
2002 Fairchild Semiconductor Corporation
FDD6612A/FDU6612A Rev D1 (W)
FDD6612A/FDU6612A
Electrical Characteristics
Symbol
W DSS IAR BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on)
TA = 25°C unless otherwise noted
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)
Test Conditions
Single Pulse, VDD = 15 V, ID=10 A
Min Typ
Max Units
90 10 mJ A V
Drain-Source Avalanche Ratings (Note 2)
Off Characteristics
VGS = 0 V, ID = 250 µA ID = 250 µA,Referenced to 25°C VDS = 24 V, VGS = 20 V, VGS = 20 V VG S = 0 V VDS = 0 V VDS = 0 V 1 1.6 -4.2 17 24 26 22 830 185 80 f = 1.0 MHz 1.8 6 VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 10 18 5 VDS = 40V, VGS = 5 V ID = 9.5 A, 9 2.8 3.1 12 18 29 12 13 30 22 1 100 100 3 mV/°C µA nA nA V mV/°C m
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = VGS, ID = 250 µA ID = 250 µA,Referenced to 25°C VGS = 10 V, VGS = 4.5 V, VGS = 10 V, VDS = 5 V, ID = 9.5 A ID = 8 A ID = 9.5 A, TJ=125°C ID = 9.5 A
20 28 36
gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd
S pF pF pF ns ns ns ns nC nC nC
Dynamic Characteristics
VDS = 15 V, f = 1.0 MHz VGS = 15 mV, V GS = 0 V,
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
FDD6612A/FDU6612A Rev. D1 (W)
FDD6612A/FDU6612A
Electrical Characteristics
Symbol
IS VSD
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min Typ
Max Units
2.3 A V
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward Voltage VGS = 0 V, IS = 2.3 A
(Note 2)
0.7
1.2
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) RJA = 45°C/W when mounted on a 1in2 pad of 2 oz copper
b) RJA = 96°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as:
PD R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD6612A/FDU6612A Rev. D1 (W)
FDD6612A/FDU6612A
Typical Characteristics
60 I D , DRA IN -S O U R C E CU R R E N T (A ) V G S = 10V 50 40 30 3 .5V 20 10 0 0 1 2 3 4 5 3 .0 V 6 .0 V 5 .0V 4 .5V 4.0 V
2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 10 20 30 40 50 60 4.0V 4.5 V 5.0V 6 .0 V 8.0V 10 V V G S = 3 .5 V
V D S , DRA IN - S O U R C E VO L T A G E (V)
I D , DRA I N CUR R E N T (A)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage
0 .0 7
1 .8 1 .6 1 .4 1 .2
I D = 9.5A V G S = 10V 0 .0 6 0 .0 5 0 .0 4 T A = 125 C 0 .0 3
o
I D = 5A
1 0 .0 2 0 .8 0.6 -5 0 -2 5 0 25 50 75 1 00
o o
0 .0 1 0 2 4 6
T A = 25 C
1 25
1 50
8
10
T J, JUN C T IO N TEMPER A T U R E ( C )
V G S, GATE TO SOUR C E VO L T A G E (V)
Figure 3. On-Resistance Variation withTemperature
40 V D S = 5V ID , DR A I N CU R R E N T (A) 32 T A = -55 C
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage
1 00 V G S = 0V
25 C
o
125 C
o
10 TA = 1 25 C 1 25 C 0.1 -5 5 C
o o o
24
16
0 .01 0 .0 0 1 0.00 0 1 1 2 3 4 5 6 0 0 .2 0.4 0 .6 0.8 1 1 .2 1.4
8
0
V G S , GATE TO SO U R C E VOLTAG E (V)
V SD , B O D Y DIO D E FOR W A R D V O L T A G E (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature
FDD6612A/FDU6612A Rev. D1 (W)
FDD6612A/FDU6612A
Typical Characteristics
10 ID = 9.5A 8
120 0 100 0 V D S = 5V 1 5V 1 0V 80 0 60 0 C IS S f = 1MHz V GS = 0 V
6
4 40 0 2 20 0 0 0 3 6 9 12 15 0 5 10 15
C O SS C R SS 20 25 30
0
Q g , GA T E C H A R G E (nC )
V D S, DR A I N TO SOUR C E VO L T A G E (V)
Figure 7. Gate Charge Characteristics
10 0 R D S (O N ) LIM I T 10 1m s 1 0m s 100 m s P O W E R (W) 1S 1 DC V G S = 10V 0.1 S IN G L E P UL S E R J A = 96 C / W T A = 25 C 0.01 0 .1 1 10 10 0 0
o o
Figure 8. Capacitance Characteristics
60 S I N G L E PU L S E R J A = 96 C / W 40 T A = 25 C
o o
1 0 0µ s
1 0S
20
0.0 1
0. 1
1
10
1 00
1 0 00
V D S , DR A I N - S O U R C E VOLTAG E (V)
S I N G L E PULSE TIM E (SEC)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power Dissipation
1 TRANSIENT THERMAL RESISTANCE
D = 0.5 0.2 r(t), NORMALIZED EFFECTIVE
0.1
0.1 0.05 0.01
R JA (t) = r(t) * R JA R JA = 96°C/W
0.02 Single Pulse P(pk)
0.01
t1
0.001
t2
TJ - TA = P * R JA (t) Duty Cycle, D = t 1 / t 2
0.0001 0.0001
0.001
0.01
0.1 t , TIME (sec) 1
1
10
100
300
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDD6612A/FDU6612A Rev. D1 (W)
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