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Details, datasheet, quote on part number:FDD6632
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| Part: | FDD6632 |
| Description: | FDD6632 - Discrete Commercial N-channel UltraFET Logic Level Trench Power MOSFET, 30V, 9A, 0.090 Ohms @ VGS = 10V, TO-252/DPAK Package |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FDD6632 datasheet File size : 248 kB |
| Request For quote: | Find where to buy FDD6632
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Datasheet text preview:
FDD6632
June 2002
FDD6632
N-Channel Logic Level UltraFET® Trench Power MOSFET 30V, 9A, 90m
General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. For merly developmental type 83317
Features
· Fast switching · rDS(ON) = 0.058 (Typ), VGS = 10V, ID = 9A · rDS(ON) = 0.090 (Typ), VGS = 4.5V, ID = 6A · Qg(T OT ) (Typ) = 2.6nC, VGS = 5V · Qgd (Typ) = 0.8nC · CISS (Typ) = 255pF
Applications
· DC/DC converters
D
D G S
G
DO-2 52 T -PAK (TO-252)
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VD SS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 4.5V) Continuous (TC = 25oC, VGS = 10V, R JA = 52oC/W) Pulsed PD TJ, TST G Power dissipation Derate above 25oC Operating and Storage Temperature 9 6 4 Figure 4 15 0.1 -55 to 175 A A A A W W/oC
o
Ratings 30 ±20
Units V V
C
Thermal Characteristics
R JC R JA R JA Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 10 100 52
o o
C/W C/W
oC/W
Package Marking and Ordering Information
Device Marking FDD6632 Device FDD6632 Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 2500 units
©2002 Fairchild Semiconductor Corporation
F DD66 32 Rev. B
FDD6632
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS ID SS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VD S = 25V VGS = 0V VGS = ±20V TC = 150oC 30 1 250 ±100 V µA nA
On Characteristics
VGS(TH) rD S ( O N ) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 9A, VGS = 10V ID = 6A, VGS = 4.5V 1 0.058 0.090 3 0.090 0.110 V
Dynamic Characteristics
CISS CO S S CR S S Qg(TOT) Q g ( TH ) Qg s Qg d Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VD S = 15V, VGS = 0V, f = 1MHz VGS = 0V to 5V VGS = 0V to 1V VD D = 15V ID = 9A Ig = 1.0mA 255 73 23 2.6 0.3 0.8 0.8 4.0 0.5 pF pF pF nC nC nC nC
Switching Characteristics (VGS = 4.5V)
tON t d ( O N) tr t d ( O FF) tf t O FF Tur n- On Time Tur n- On Delay Time Rise Time Tur n- Off Delay Time Fall Time Tur n- Off Time VD D = 15V, ID = 6A VGS = 4.5V, RGS = 47 10 41 10 23 77 50 ns ns ns ns ns ns
Switching Characteristics (VGS = 10V)
tON t d ( O N) tr t d ( O FF) tf t O FF Tur n- On Time Tur n- On Delay Time Rise Time Tur n- Off Delay Time Fall Time Tur n- Off Time VD D = 15V, ID = 6A VGS = 10V, RGS = 47 4 2 33 20 9 80 ns ns ns ns ns ns
Unclamped Inductive Switching
tAV Avalanche Time ID = 2.3A, L = 3.0mH 153 µs
Drain-Source Diode Characteristics
V SD t rr Q RR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 9A ISD = 5A ISD = 9A, dISD/dt = 100A/µs ISD = 9A, dISD/dt = 100A/µs 1.25 1.0 18 8 V V ns nC
©2002 Fairchild Semiconductor Corporation
F DD66 32 Rev. B
FDD6632
Typical Characteristics TC = 25°C unless otherwise noted
1.2 10
POWER DISSIPATION MULTIPLIER
1.0 ID, DRAIN CURRENT (A)
8 VGS = 10V 6
0.8
0.6
4 VGS = 4.5V 2
0.4
0.2
0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC)
0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs Ambient Temperature
2 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
Figure 2. Maximum Continuous Drain Current vs Case Temperature
ZJC, NORMALIZED THER MAL IMPEDANCE
PDM 0.1 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-2 t , RECTANGULAR PULSE DURATION (s) 10-1 100 101
0.01 10- 5
10- 4
10-3
Figure 3. Normalized Maximum Transient Thermal Impedance
100
TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK
IDM, PEAK CURRENT (A)
CURRENT AS FOLLOWS: I = I25 VGS = 5V 175 - TC 150
TRANSCONDUCTANC E MAY LIMIT CURRENT IN THIS REGION 10 7 10-5 10- 4 10-3 10-2 t , PULSE WIDTH (s) 10- 1 100 101
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation
F DD66 32 Rev. B
FDD6632
Typical Characteristics TC = 25°C unless otherwise noted
20 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDD = 15V ID, DRAIN CURRENT (A) TJ = 25oC 20 VGS = 10V VGS = 5V
ID, DRAIN CURRENT (A)
15
15 VGS = 4.5V
10
10 VGS = 3.5V
5 TJ = 175oC 0 1 2 3 4 5 6 VGS , GATE TO SOURCE VOLTAGE (V) TJ = -55 oC
5
TC = 25oC PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX
0 0 0 .5 1.0 1 .5 2.0 2.5 VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
150 NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX rDS(ON), DRAIN TO SOURCE ON RESISTANCE (m) 125 ID = 6A 100 ID = 9A
Figure 6. Saturation Characteristics
2.0 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX
1.5
1.0
75
VGS = 10V, ID = 9A 50 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) 0.5 -80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC )
Figure 7. Drain to Source On Resistance vs Gate Voltage and Drain Current
1.2 VGS = VDS, ID = 250µA
Figure 8. Normalized Drain to Source On Resistance vs Junction Temperature
1.2 ID = 250µA NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE
NORMALIZED GATE THRESHOLD VOLTAGE
1.0
1.1
0.8
1.0
0.6
0.4 -80
-40
0
40
80
120
160
200
0.9 -80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (o C)
TJ , JUNCTION TEMPERATURE (oC)
Figure 9. Normalized Gate Threshold Voltage vs Junction Temperature
Figure 10. Normalized Drain to Source Breakdown Voltage vs Junction Temperature
©2002 Fairchild Semiconductor Corporation
F DD66 32 Rev. B
FDD6632
Typical Characteristics TC = 25°C unless otherwise noted
500 VGS , GATE TO SOURCE VOLTAGE (V) CISS = CGS + CGD 10 VDD = 15V 8
C, CAPACITANCE (pF)
COSS CDS + CGD 100 CRSS = CGD
6
4 WAVEFORMS IN DESCEND IN G ORDER: ID = 9A ID = 4A 0 1 2 3 Qg, GATE CHARGE (nC) 4 5
2
VGS = 0V, f = 1MHz 10 0.1 1 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 30 0
Figure 11. Capacitance vs Drain to Source Voltage
50 VGS = 4.5V, VDD = 15V, ID = 6A tr 40 SWITCHING TIME (ns)
Figure 12. Gate Charge Waveforms for Constant Gate Currents
40 VGS = 10V, VDD = 15V, ID = 6A
SWITCHING TIME (ns)
30
td(OFF )
30 tf 20 td(OFF) td (ON) 0 0 10 20 30 40 RGS, GATE TO SOURCE RESISTANCE () 50
20 tf
10 td (ON) 0 0 tr 10 20 30 40 RGS, GATE TO SOURCE RESISTANCE () 50
10
Figure 13. Switching Time vs Gate Resistance
Figure 14. Switching Time vs Gate Resistance
Test Circuits and Waveforms
VDS tP L IA S VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP 0V RG -
BVDSS
VDS VDD
+
VD D
IAS 0.01
0 tAV
Figure 15. Unclamped Energy Test Circuit
©2002 Fairchild Semiconductor Corporation
Figure 16. Unclamped Energy Waveforms
F DD66 32 Rev. B
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