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Details, datasheet, quote on part number:FDD6644
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Datasheet text preview:
FDD6644/FDU6644
April 2001
FDD6644/FDU6644
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
· 67 A, 30 V. RDS(ON) = 8.5 m @ VGS = 10 V RDS(ON) = 10.5 m @ VGS = 4.5 V
Applications
· DC/DC converter
· High performance trench technology for extremely low RDS(ON) · Low gate charge (25 nC typical) · High power and current handling capability
D
G S
D
I-PAK (TO-251AA) GDS
G
DO -252 T -PAK (TO-252)
S
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation
Parameter
Ratings
30 ±16
(Note 1a)
Units
V V A W
67 100 68 3.8 1.6 -55 to +175
(Note 1) (Note 1a) (Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1b)
2.2 96
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDD6644 FDU6644 Device FDD6644 FDU6644 Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13'' Tube Tape width 12mm N/A Quantity 2500 units 75
2001 Fairchild Semiconductor Corporation
FDD/FDU6644 Rev C(W)
FDD6644/FDU6644
Electrical Characteristics
Symbol
W DSS IAR BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on)
TA = 25°C unless otherwise noted
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)
Test Conditions
Single Pulse, VDD = 15 V, ID=17A
Min
Typ
Max Units
240 17 mJ A V
Drain-Source Avalanche Ratings (Note 2)
Off Characteristics
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 16 V, VDS = 0 V VGS = 16 V, VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 16 A VGS = 4.5 V, ID = 15 A VGS = 10 V, ID = 16.5A,TJ=125°C VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 16 A 1 1.5 5 6.5 7.5 10 50 74 3087 489 185 VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 10 12 48 10 VDS = 15 V, ID = 16 A, VGS = 5 V 25 7.5 6.5 20 22 77 20 35 8.5 10.5 13 30 27 1 100 100 3 mV/°C µA nA nA V mV/°C m
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
A S pF pF pF ns ns ns ns nC
Dynamic Characteristics
VDS = 15 V, V GS = 0 V, f = 1.0 MHz
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
FDD/FDU6644 Rev C(W)
FDD6644/FDU6644
Electrical Characteristics (continued)
IS VSD
TA = 25°C unless otherwise noted
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward VGS = 0 V, IS = 2.7 A Voltage 3.2
(Note 2)
A V
0.7
1.2
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) RJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper
b) RJA = 96°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as:
PD R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD/FDU6644 Rev C(W)
FDD6644/FDU6644
Typical Characteristics
50
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2
ID, DRAIN CURRENT (A)
40
VGS = 10V 6.0V
3.5V 3.0V
1.75 VGS = 3.0V 1.5 3.5V 1.25 4.0V 4.5V 6.0V 1 10V
4.5V 30
20 2.5V 10
0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V)
0.75 0 10 20 30 40 50 ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.024 RDS(ON), ON-RESISTANCE (OHM)
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) ID = 16A VGS = 10V
ID = 8 A 0.02
0.016 TA = 125oC 0.012
0.008
TA = 25oC
0.004 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10
Figure 3. On-Resistance Variation with Temperature.
70 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 60 ID, DRAIN CURRENT (A) 50 40 30 20 10 0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) TA = -55oC 25oC 125 C
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 VGS = 0V 10 TA = 125oC 1 25oC 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) -55oC
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDD/FDU6644 Rev C(W)
FDD6644/FDU6644
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 16A 8 15V 6 VDS = 5V 10V
4000 3500 CAPACITANCE (pF) 3000 2500 2000 1500 1000 500 CRSS 0 5 10 15 20 25 30 COSS CISS f = 1MHz VGS = 0 V
4
2
0 0 10 20 30 40 50 Qg, GATE CHARGE (nC)
0 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
Figure 8. Capacitance Characteristics.
80 P(pk), PEAK TRANSIENT POWER (W)
100µs ID, DRAIN CURRENT (A) RD S(ON) LIMIT 10 10s 1 VGS = 10V SINGLE PULSE RJA = 96 C/ W TA = 25 C 0.01 0. 01 0.1 1 10 100 VD S, DRAIN-SOURCE VOLTAGE (V)
o o
1ms 10ms 100ms 1s DC
70 60 50 40 30 20 10 0 0.1 1 t1, TIME (sec) 10
SINGLE PULSE RJA = 96°C/W TA = 25°C
0.1
100
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0 .2
0 .1
0.1 0.05 0 . 02
R JA (t) = r(t) + R JA R JA = 96 °C/W P ( pk )
0 . 01
t1 t2 T J - T A = P * R J A ( t) D u t y Cycle, D = t1 / t2
0.01
S I N G LE PULSE
0.001 0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1 t1 , TIME (sec)
1
10
10 0
10 00
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b Transient thermal response will change depending on the circuit board design.
FDD/FDU6644 Rev C(W)
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