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Details, datasheet, quote on part number:FDD6644S
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Datasheet text preview:
FDD6644S
OCTOBER 2002
FDD6644S
30V N-Channel PowerTrench MOSFET
General Description
The FDD6644S is designed to replace a DPAK MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6644S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.
Features
· 66 A, 30 V RDS(ON) = 8.5 m @ VGS = 10 V RDS(ON) = 10.0 m @ VGS = 4.5 V
· Low gate charge · Fast Switching · High performance trench technology for extremely low RDS(ON) D
Applications
· DC/DC converter
G S
D
G
DO -252 T -PAK (TO-252)
TA=25oC unless otherwise noted
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Single Operation
(Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b)
Ratings
30 ±16 66 100 57 3.1 1.3 55 to +150
Units
V V A W
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RJC RJA RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
2.2 40 96
°C/W °C/W °C/W
Package Marking and Ordering Information
Device Marking FDD6644S Device FDD6644S Reel Size 13'' Tape width 12mm Quantity 2500 units
2002 Fairchild Semiconductor Corporation
FDD6644S Rev B (W)
FDD6644S
Electrical Characteristics
Symbol
WDSS I AR BVDSS BVDSS TJ IDSS I G SS VGS(th) VGS(th) TJ RDS(on)
TA = 25°C unless otherwise noted
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage
(Note 2)
Test Conditions
Single Pulse, VDD = 15 V, ID = 16A
Min Typ
Max Units
237 16 mJ A V
Drain-Source Avalanche Ratings (Note 2)
Off Characteristics
VGS = 0 V, ID = 1 mA ID = 10 mA, Referenced to 25°C VDS = 24 V, VGS = ±16 V, VGS = 0 V VDS = 0 V 1 1.3 1.6 6.5 7.5 10 66 60 2790 515 175 f = 1.0 MHz 1.6 11 VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 12 51 17 VDS = 15V, VGS = 5 V ID = 16 A, 25 5.6 6.4 20 22 81 30 35 30 24 500 ±100 3 mV/°C µA nA V mV/°C m
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance Forward Transconductance On-State Drain Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = VGS, ID = 1 mA ID = 10 mA, Referenced to 25°C VGS = 10 V, ID = 16 A VGS = 4.5 V, ID = 15 A VGS = 10 V, ID = 16 A,TJ=125°C VDS = 5 V, ID = 16 A VGS = 10 V, VDS = 5 V
8.5 10 12.5
gFS ID(on) Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd
S A pF pF pF ns ns ns ns nC nC nC
Dynamic Characteristics
VDS = 15 V, f = 1.0 MHz V GS = 0 V, V GS = 0 V,
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
FDD6644S Rev B (W)
FDD6644S
Electrical Characteristics (continued)
Symbol
IS V SD tRR IRM QRR
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min Typ
Max Units
4.4 A mV ns A nC
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward Voltage Diode Reverse Recovery Time Maximum Recovery Current Diode Reverse Recovery Charge VGS = 0 V, IS = 4.4 A
(Note 2)
490 21
700
dIF/dt = 300A/us, IF = 16A
1.6 17
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) RJA = 40°C/W when mounted on a 1in pad of 2 oz copper
2
b) RJA = 96°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as:
PD R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD6644S Rev B (W)
FDD6644S
Typical Characteristics
100 3.0V ID, DRAIN CURRENT (A) 80 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 3.5V
2.3
1.8
VGS = 2.5V
60
40
3.0V 1.3 3.5V 4.5V 6.0V 10V 0.8
2.5V
20 2.0V 0 0 0 .5 1 1.5 2 2.5 3 VDS, DRAIN-SOURCE VOLTAGE (V)
0
20
40
60
80
100
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage
0.028 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 78A VGS =10V 1.4
ID = 8.0A 0.024 0.02 0.016 0.012 0.008 0.004 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) TA =25oC
1.2
1
TA = 125 C
o
0.8
0.6 - 50 -25 0 25 50 75
o
10 0
125
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature
90 VDS = 5V IS, REVERSE DRAIN CURRENT (A) 75 ID, DRAIN CURRENT (A) 60 45 TA = 125 C 30 15 0 1 1.5 2 2. 5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V)
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage
10 VGS = 0V
1
TA = 125oC 25oC
-55oC
0.1
-55oC
25oC
0.01 0 0.2 0.4 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.6
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature
FDD6644S Rev B (W)
FDD6644S
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 78A 8 VDS = 10V 15V 4 20V CAPACITANCE (pF)
4000 f = 1MHz VGS = 0 V 3000 Ciss 2000
6
1000 Crss 0
Coss
2
0 0 10 20 30 40 50 Qg, GATE CHARGE (nC)
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
1000
P(pk), PEAK TRANSIENT POWER (W) 50
Figure 8. Capacitance Characteristics
RDS(ON) LIMIT
ID, DRAIN CURRENT (A)
100
10
100us 1ms 10ms 100ms 1s 10s DC VGS = 10V SINGLE PULSE RJA = 125oC/W TA = 25 C
o
40
SINGLE PULSE RJA = 125°C/W TA = 25°C
30
1
20
0.1
10
0.01 0.01
0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V)
100
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power Dissipation
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) * RJA RJA = 125 °C/W
0.1
0.1 0.05
P(pk
0.01
0.02 0.01
SINGLE PULSE
t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.001 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDD6644S Rev B (W)
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