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Details, datasheet, quote on part number:FDD6670AL
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Datasheet text preview:
FDD6670AL
December 2002
FDD6670AL
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
Features
· 84 A, 30 V. RDS(ON) = 5 m @ VGS = 10 V RDS(ON) = 6 m @ VGS = 4.5 V · Low gate charge · Fast switching · High performance trench technology for extremely low RDS(ON)
Applications
· DC/DC converter · Motor Drives
D
G S
D
I-PAK (TO-251AA) GDS
G
DO-252 T -PAK (TO-252)
S
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbo l
VDSS VGSS ID PD
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Single Operation
(Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b)
Ratings
30 ±16 84 100 83 3.8 1.6 55 to +175
Units
V A W
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
1.8 40 96
°C/W
Package Marking and Ordering Information
Device Marking FDD6670AL Device FDD6670AL Package D-PAK (TO-252) Reel Size 13'' Tape width 12mm Quantity 2500 units
2002 Fairchild Semiconductor Corporation
FDD6670AL Rev B (W)
FDD6670AL
Electrical Characteristics
Symbol
WDSS IAR
TA = 25°C unless otherwise noted
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage
(Note 2)
Test Conditions
Single Pulse, VDD = 15 V, ID = 21A
Min Typ Max Units
370 21 mJ A V 24 10 ±100 1 1.8 5 4 5 6 50 88 3 mV/°C µA nA
Drain-Source Avalanche Ratings (Note 2)
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) VGS = 0 V, ID = 250 µA 30 ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = ±16 V, VG S = 0 V V DS = 0 V
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 18 A ID = 16.5 A VGS = 4.5 V, VGS = 10 V, ID = 18 A, TJ=125°C VGS = 10 V, VDS = 5 V, VDS = 15 V, f = 1.0 MHz V DS = 5 V ID = 18 A V GS = 0 V,
V mV/°C
5 6 10
m
ID(on) gF S Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd
A S
Dynamic Characteristics
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
3845 930 368
pF pF pF 27 23 99 58 56 ns ns ns ns nC nC nC
VGS = 15 mV, VDD = 15 V, VGS = 10 V,
f = 1.0 MHz ID = 1 A, RGEN = 6
1.2
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
15 13 62 36
VDS = 15V, VG S = 5 V
ID = 18 A,
37 10 14
FDD6670AL Rev. B (W)
FDD6670AL
Electrical Characteristics (continued)
Symbol
VSD tr r Qrr
TA = 25°C unless otherwise noted
Parameter
DrainSource Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge
Test Conditions
VGS = 0 V, IS = 3.2 A
(Note 2)
Min Typ Max Units
0.7 39 31 1.2 V nS nC
DrainSource Diode Characteristics and Maximum Ratings
IF = 18 A ,diF/dt = 100 A/µs
Notes:8 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) RJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper
b) RJA = 96°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as:
PD R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD6670AL Rev. B (W)
FDD6670AL
Typical Characteristics
100
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 10V 4.5V
1.8 4.0V 3.5V VGS = 3.5V
ID, DRAIN CURRENT (A)
80
1.6
60
1.4 4.0V 1.2 4.5V 5.0V 6.0V 1 10V
40
3.0V
20
0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V)
0.8 0 20 40 60 80 100 ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.012 RDS(ON), ON-RESISTANCE (OHM)
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100
o
ID =18A VGS = 10V
ID = 9 A
0.01
0.008
TA = 125oC
0.006
TA = 25oC
0.004
0.002
125
150
175
2
4
6
8
10
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
80
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
VDS = 5V
ID, DRAIN CURRENT (A) 60
10 1
TA = 125oC
25oC
40
0.1 0.01 0.001 0.0001
-55oC
TA = 125oC
20
25oC -55oC
0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
1 .4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature
FDD6670AL Rev. B (W)
FDD6670AL
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V)
ID =18A
8
VDS = 10V 20V
15V
5000 f = 1MHz VGS = 0 V 4000 CAPACITANCE (pF) CISS 3000
6
4
2000 COSS 1000 CRSS
2
0 0 20 40 Qg, GATE CHARGE (nC) 60 80
0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
1000
P(pk), PEAK TRANSIENT POWER (W) 100
Figure 8. Capacitance Characteristics
SINGLE PULSE RJA = 96°C/W TC = 25°C
ID, DRAIN CURRENT (A)
100
100µs RDS(ON) LIMIT 1ms 10ms 100ms 1s 10s VGS = 10V SINGLE PULSE RJA = 96oC/W TC = 25oC DC
80
10
60
1
40
0.1
20
0.01 0.01
0.1
1
10
100
0 0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power Dissipation
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05
RJAt) = r(t) * RJA RJA = 96 °C/W P(pk) t1
SINGLE PULSE
0.01
0.02 0.01
0.001
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.0001 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDD6670AL Rev. B (W)
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