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Details, datasheet, quote on part number:FDD6670S.
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Datasheet text preview:
FDD6670S
September 2001
FDD6670S
30V N-Channel PowerTrench® SyncFET TM
General Description
The FDD6670S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6670S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDD6670S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6670A in parallel with a Schottky diode.
Features
· 64 A, 30 V RDS(ON) = 9 m @ VGS = 10 V RDS(ON) = 12.5 m @ VGS = 4.5 V · Includes SyncFET Schottky body diode · Low gate charge (17nC typical) · High performance trench technology for extremely low RDS(ON) · High power and current handling capability .
Applications
· DC/DC converter · Motor Drives
D
G S
TO-252
D
G
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation
T A = 2 5 oC unless otherwise noted
Parameter
Ratings
30 ±20
(Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b)
Units
V V A W
64 100 70 3.2 1.3 55 to +150
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RJC RJA RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
1.8 40 96
°C/W °C/W °C/W
Package Marking and Ordering Information
Device Marking FDD6670S
©2001 Fairchild Semiconductor Corporation
Device FDD6670S
Reel Size 13''
Tape width 16mm
Quantity 2500 units
FDD6670S Rev E(W)
FDD6670S
Electrical Characteristics
Symbol
W DSS IAR
T A = 25°C unless otherwise noted
Parameter
(Note 2)
Test Conditions
Single Pulse, VDD = 15 V, ID=14A
Min
Typ
Max
245 14
Units
mJ A
Drain-Source Avalanche Ratings
Drain-Source Avalanche Energy Drain-Source Avalanche Current
Off Characteristics
BVDSS BVDSS TJ IDSS IGSSF IGSSR DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)
VGS = 0 V, ID = 1 mA ID = 10 mA, Referenced to 25°C VD S = 24 V, VGS = 20 V, VGS = 20 V, VGS = 0 V VD S = 0 V VD S = 0 V
30 19 500 100 100
V mV/°C µA nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance
VD S = VGS, ID = 1 mA ID = 10 mA, Referenced to 25°C VGS = 10 V, ID = 13.8 A VGS = 4.5 V, ID = 11.7 A VGS= 10 V, ID = 13.8A, TJ= 125°C VGS = 10 V, VD S = 15 V, VD S = 5 V ID = 13.8 A
1
2 3.3 6 9 10
3
V mV/°C
9 12.5 15
m
ID(on) gFS
50 27
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VD S = 15 V, f = 1.0 MHz
V GS = 0 V,
2010 526 186
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qg s Qg d TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
VD S = 15 V, VGS = 10 V,
ID = 1 A, RGEN = 6
10 10 34 14
18 18 55 23 24
ns ns ns ns nC nC nC
VD S = 15 V, VGS = 10 V
ID = 13.8 A,
17 6.2 5.5
DrainSource Diode Characteristics
VSD trr Qrr DrainSource Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 3.5 A, diF/ dt = 300 A/µs
(Note 2) (Note 2) (Note 3)
0.49 0.56 20 19.7
0.7
V nS nC
FDD6670S Rev E (W)
FDD6670S
Electrical Characteristics
T A = 25°C unless otherwise noted
Notes: 1. RJA is the sum of the junction-to-case and case -t o -ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) RJA = 40°C/W when mounted on a 1in 2 pad of 2 oz copper
b) RJA = 96°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as:
PD R DS(ON)
where PD is maximum power dissipation at T C = 25°C and RDS(on) is at T J(max) and V GS = 10V. Package current limitation is 21A
FDD6670S Rev E (W)
FDD6670S
Typical Characteristics
50
2.6
VGS = 10V
40 I D, DRAIN CURRENT (A)
6.0V
R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
4.5V 4.0V 3.5V
2.2
VGS = 3.5V
30
1.8
4.0V
1.4
20
4.5V 6.0V
10
3.0V
1
10V
0 0 0.5 1 1.5 2 VD S, DRAIN-SOURCE VOLTAGE (V)
0.6 0 10 20 30 40 50 I D, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.025 RDS(ON) , ON-RESISTANCE (OHM)
R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
1.6
ID = 13.5A VGS = 10V
ID = 6.8A
0.02
1.4
1.2
0.015
1
TA = 125 C
o
0.8
0.01
T A = 25 C
o
0.6 -50 -25 0 25 50
o
75
100
0.005 2 4 6 8 10 V GS , GATE TO SOURCE VOLTAGE (V)
T J, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
70
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10 I S, REVERSE DRAIN CURRENT (A)
VDS = 5V
60 I D, DRAIN CURRENT (A)
T A = -55 C 125 C
o
o
25 C
o
VGS = 0V
1
50 40 30 20 10 0 2 2.5 3 3.5 4 4.5 VGS , GATE TO SOURCE VOLTAGE (V)
TA = 125 C
o
o
0.1
25 C
-55 C
0.01
o
0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDD6670S Rev E (W)
FDD6670S
Typical Characteristics
(continued)
10 VGS, GATE-SOURCE VOLTAGE (V) ID =13.5A 8 15V 6 VD S = 5V 10V C A P A C I T A N C E (pF)
3600 3000 C ISS 2400 1800 1200 C OSS 600 CRSS 0 0 5 10 15 20 25 30 35 40 45 0 5 10 15 20
f = 1MHz VGS = 0 V
4
2
0 Qg , GATE CHARGE (nC)
25
30
VD S, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W) 1 0 0µ s 1ms 10ms 100ms 1s 50
Figure 8. Capacitance Characteristics.
R D S ( O N ) LIMIT
ID, DRAIN CURRENT (A)
10
40
S I N G L E PULSE R J A = 96°C/W T A = 25°C
1
V G S = 10V S I N G L E PULSE o R J A = 96 C / W T A = 25 oC
10s DC
30
20
0.1
10
0.01 0.01
0.1
1
10
100
0 0.001
0.01
0.1
1 t1 , TIME (sec)
10
100
1000
V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05 0.02
R J A (t) = r(t) * R J A R J A = 96 °C/W P(pk) t1 t2 TJ - T A = P * R J A( t ) D u t y Cycle, D = t 1 / t2
0.01
0.01
S I N G L E PULSE
0.001 0.0001
0.001
0.01
0.1 t 1 , TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDD6670S Rev E (W)
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