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Details, datasheet, quote on part number:FDD6672A
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| Part: | FDD6672A |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | 30V N-channel Powertrench MOSFET |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FDD6672A datasheet File size : 81 kB |
| Request For quote: | Find where to buy FDD6672A
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Datasheet text preview:
FDD6672A
April 2001
FDD6672A
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
· 65 A, 30 V. RDS(ON) = 9.5 m @ VGS = 4.5 V RDS(ON) = 8 m @ VGS = 10 V
Applications
· DC/DC converter
· High performance trench technology for extremely low RDS(ON) · Low gate charge (33 nC typical) · High power and current handling capability
D
G S
TO-252
D
G
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
30 ±12
(Note 1a)
Units
V V A W
65 100 70 3.2 1.3 -55 to +150
Maximum Power Dissipation @ TC = 25°C @ TA = 25°C @ TA = 25°C
(Note 1) (Note 1a) (Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1b)
1.8 96
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDD6672A Device FDD6672A Reel Size 13'' Tape width 16mm Quantity 2500 units
2000 Fairchild Semiconductor Corporation
FDD6672A Rev C (W)
FDD6672A
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on) ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD
TA = 25°C unless otherwise noted
Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = 12 V VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 4.5 V, VGS = 4.5 V, VGS = 10 V, VGS = 10 V, VDS = 10 V, ID = 13 A ID = 13 A, TJ=125°C ID = 14 A VDS = 5 V ID = 15 A
Min
30
Typ
Max Units
V
Off Characteristics
20 1 100 100 0.8 1.2 -4 8.2 11.5 6.8 50 75 5070 550 230 VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 17 18 69 29 VDS = 15 V, ID = 15 A, VGS = 4.5 V 33 7.5 6.8 2.7
(Note 2)
mV/°C µA nA nA V mV/°C 9.5 16 8 m A S pF pF pF 25 25 100 42 46 ns ns ns ns nC nC nC A V
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
2.0
Dynamic Characteristics
VDS = 15 V, V GS = 0 V, f = 1.0 MHz
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward VGS = 0 V, IS = 2.7 A Voltage 0.7 1.2
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab. RJC is guaranteed by design while RCA is determined by the user's board design.
a) RJA= 40oC/W when mounted on a 1in2 pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
b) RJA= 96oC/W on a
minimum mounting pad.
FDD6672A Rev C(W)
FDD6672A
Typical Characteristics
50
ID, DRAIN CURRENT (A)
40
3.5V 2.5V
3.0V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 4.5V
1.5
1.3
VGS = 2.5V
30 2.0V
20
3.0V 1.1 3.5V 4.0V 4.5V
10
0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V)
0.9 0 10 20 30 40 50 60 ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.025 RDS(ON), ON-RESISTANCE (OHM)
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) ID = 15A VGS = 10V
ID = 6 A 0.02
0.015 TA = 125oC 0.01 TA = 25oC 0.005
0 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
60 VDS = 5V ID, DRAIN CURRENT (A) 45 IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 VGS = 0V 10 TA = 125oC 1 25oC -55oC 0.1
30 TA = 125oC 15 25oC -55oC
0.01
0 0.5 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V)
0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDD6672A Rev C(W)
FDD6672A
Typical Characteristics
5 VGS, GATE-SOURCE VOLTAGE (V) ID = 12.5A 4 VDS = 5V 15V 3 10V CAPACITANCE (pF)
8000 f = 1MHz VGS = 0 V 6000 CISS 4000
2
1
2000 COSS
0 0 10 20 Qg, GATE CHARGE (nC) 30 40
0 0
CRSS 5 10 15 20 25 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
1000 RDS(ON) LIMIT 1ms 10ms 100ms 1s 1 VGS = 4.5V SINGLE PULSE 0.1 RJA = 96 C/W TA = 25 C 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 0
o o
Figure 8. Capacitance Characteristics.
100 SINGLE PULSE RJA = 96 °C/W TA = 25°C
100
100µs
80
10 10s DC
60
40
20
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIE THERMAL RESISTANCE
1
D = 0.5 0. 2 0.1 0. 05 0. 02
0 .1
R JA(t) = r(t) + R JA = 96 °C/W P (p k ) t1 t2
SINGLE PULSE 0. 01
0 .0 1
TJ - TA = P * R JA(t) D u ty Cycle, D = t1 / t2 0 .1 t1, TIME (sec) 1 10 100 1000
0.001 0 .0 0 0 1 0 .0 0 1 0 .0 1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDD6672A Rev C(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM
PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM Star* PowerTM StealthTM
SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. H1
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