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Details, datasheet, quote on part number:FDD6676
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Datasheet text preview:
FDD6676
April 2001
FDD6676
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. extremely low RDS(ON) in a small package.
Features
· 78 A, 30 V RDS(ON) = 7.5 m @ VGS = 10 V RDS(ON) = 8.5 m @ VGS = 4.5 V
· Low gate charge · Fast Switching · High performance trench technology for extremely low RDS(ON)
Applications
· DC/DC converter · Motor Drives
D
G S
TO-252
D
G
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD
TA=25oC unless otherwise noted
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Single Operation
(Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b)
Ratings
30 ±16 78 100 83 3.8 1.6 -55 to +175
Units
V V A W
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RJC RJA RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
1.8 40 96
°C/W °C/W °C/W
Package Marking and Ordering Information
Device Marking FDD6676 Device FDD6676 Reel Size 13'' Tape width 12mm Quantity 2500 units
2001 Fairchild Semiconductor Corporation
FDD6676 Rev C(W)
FDD6676
Electrical Characteristics
Symbol
W DSS IAR BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on)
TA = 25°C unless otherwise noted
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)
Test Conditions
Single Pulse, VDD = 15 V, ID=21A
Min Typ
Max Units
370 21 mJ A V
Drain-Source Avalanche Ratings (Note 2)
Off Characteristics
VGS = 0 V, ID = 250 µA ID = 250 µA,Referenced to 25°C VDS = 24 V, VGS = 16 V, VGS = 16 V VG S = 0 V VDS = 0 V VDS = 0 V 1 1.5 -5 4.8 5.4 7.3 50 80 5103 836 361 15 VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 9 87 40 VDS = 15V, VGS = 5 V ID = 16.8 A, 45 13 12 27 18 139 64 63 30 24 1 100 100 3 mV/°C µA nA nA V mV/°C m
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = VGS, ID = 250 µA ID = 250 µA,Referenced to 25°C VGS = 10 V, ID = 16.8 A VGS = 4.5 V, ID = 15.8 A VGS = 10 V, ID = 16.8 A,TJ=125°C VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 16.8 A
7.5 8.5 10.5
ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
A S pF pF pF ns ns ns ns nC nC nC
Dynamic Characteristics
VDS = 15 V, f = 1.0 MHz V GS = 0 V,
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
FDD6676 Rev. C(W)
FDD6676
Electrical Characteristics (continued)
Symbol
IS VSD
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min Typ
Max Units
3.2 A V
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward Voltage VGS = 0 V, IS = 3.2 A
(Note 2)
0.7
1.2
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) RJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper
b) RJA = 96°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as:
PD R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD6676 Rev. C(W)
FDD6676
Typical Characteristics
50 VGS = 10V ID, DRAIN CURRENT (A) 40 4.5V 3.0V 30 2.5V 20 3.5V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
1.8
1.6 VGS = 3.0V 1.4 3.5V 1.2 4.0V 4.5V 6.0V 1 10V
10
0 0 0.5 1 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V)
0.8 0 10 20 30 40 50 ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage
0.02 RDS(ON), ON-RESISTANCE (OHM)
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) ID = 16.8A VGS = 10V
ID = 8.4 A 0.015 TA = 125oC 0.01
0.005 TA = 25oC 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation withTemperature
50 IS, REVERSE DRAIN CURRENT (A) VDS = 5.0V ID, DRAIN CURRENT (A) 40
Figure 4. On-Resistance Variation with Gate-to-Source Voltage
100 VGS = 0V 10 TA = 125oC 1 0.1 0.01 0.001 0.0001 25oC -55oC
30 TA = 125oC 20 25oC 10 -55oC 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature
FDD6676 Rev. C(W)
FDD6676
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 16.8A 8 VDS = 5.0V 15V 10V CAPACITANCE (pF)
7000 6000 5000 4000 3000 2000 COSS 1000 CRSS f = 1 MHz VGS = 0 V
CISS
6
4
2
0 0 10 20 30 40 50 60 70 80 90 Qg, GATE CHARGE (nC)
0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
1000 P(pk), PEAK TRANSIENT POWER (W) 50
Figure 8. Capacitance Characteristics
ID, DRAIN CURRENT (A)
100 RDS(ON) LIMIT 10 1s 10s 1 VGS = 10V SINGLE PULSE RJA = 96oC/W TA = 25oC 0.01 0.1 1 10 DC 1ms 10ms 100ms
100µs
40
SINGLE PULSE RJA = 96°C/W TA = 25°C
30
20
0.1
10
100
0 0.001
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power Dissipation
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) + RJA RJA = 96 C/W
0.02 0.01
o
0.1
0.1 0.05
P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 t1, TIME (sec) 1 10 100 1000
0.01
SINGLE PULSE
0.001 0.0001
0.001
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDD6676 Rev. C(W)
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