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Details, datasheet, quote on part number:FDD6680
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| Part: | FDD6680 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | N-channel Logic Level PowerTrench® MOSFET |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FDD6680 datasheet File size : 74 kB |
| Request For quote: | Find where to buy FDD6680
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Datasheet text preview:
FDD6680
July 1999
FDD6680
N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET
General Description
This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications. The result is a MOSFET that is easier to drive, even at very high frequencies, and DC/DC power supply designs with higher overall efficiency.
Features · 55 A, 30 V. RDS(on) = 0.010 @ VGS = 10 V
RDS(on) = 0.015 @ VGS = 4.5 V.
· Optimized for use in high frequency DC/DC converters. · Low gate charge (19nC typical). · Very Fast switching.
Applications · DC/DC converter · Motor drives
D
D G S
TO-252 A b s o lu t e Maximum Ratings
S ym b o l
V DSS V GSS ID G ate-S ou rc e Voltage M axim u m Drain Current M axim u m Drain Current PD -Continuous -Pulsed
(Note 1) (Note 1a) (Note 1b) (Note 1) (Note 1a)
G
S
TC = 2 5 oC unless otherw i s e noted
P a ra m e te r
D rain -S ou rc e Voltage
R a tin g s
30 ±20 55 14 100 60 3 .2 1 .3 -5 5 to +150
U n its
V V A
M axim u m Power Dissipation @ T C = 25 o C T A = 25 o C T A = 25 o C
W
T J , T s tg
O p eratin g and Storage Junction Temperature Range
°C
T h e rm a l Characteristics
R J C R J A T h erm al Resistance, Junction-to- Case T h erm al Resistance, Junction-to- Ambient
(Note 1) (Note 1a) (Note 1b)
2 .1 40 96
° C /W ° C /W ° C /W
P a c k a g e Marking and Ordering Information
D e v ic e M a r k in g F D D 6680 D e v ic e F D D 6680 R e e l Size 1 3 '' T a p e width 16m m Q u a n t it y 2500
1999 Fairchild Semiconductor Corporation
FDD6680, Rev.B
FDD6680
Electrical Characteristics
Symbol
W DSS IAR BVDSS BVDSS TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
Parameter
(Note 2)
T est Conditions
Mi n
T yp
Max Units
170 55 mJ A V
Drain-Source Avalanche ratings
Single Pulse Drain-Source VDD = 15 V, IL = 55 A Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
Off Characteristics
VGS = 0 V, ID = 250 µA ID = 250µA,Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 20V, VDS = 0 V VGS = -20 V, VDS = 0 V 30 18 1 100 -100 mV/°C µA nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 µA ID =250µA,Referenced to 25°C VGS = 10V, ID = 14A VGS = 10V, ID = 14A, TJ =125°C VGS = 4.5V, ID = 12 A VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 14 A
1
2 -5.5 0.008 0.013 0.012
3
V mV/°C
0.010 0.017 0.015
ID(on) gFS
50 38
A S
Dynamic Characteristics
Ci s s Co s s C rs s Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, VGS = 0 V, f = 1.0 MHz
2070 510 235
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6
15 18 40 18
28 33 64 33 27
ns ns ns ns nC nC nC
VDS = 15 V, ID = 14A, VGS = 5V,
19 7 6
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode ForwardVoltage VGS = 0 V, IS = 2.3 A
(Note 2)
2.3 0.75 1.2
A V
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab. RJC is guaranteed by design while RCA is determined by the user's board design.
a) RJA= 40oC/W when mounted on a 1in2 pad of 2oz copper.
b) RJA= 96oC/W on a minimum mounting pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDD6680, Rev.B
FDD6680
Typical Characteristics
60 ID, DRAIN-SOURCE CURRENT (A) 50 40 30 20 10 0 0 1 2 3 4 5 3.5V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 10V 5V 4.5V 4.0V
2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 10 20 30 40 50 60
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS = 4.0V
4.5V 5.0V 6.0V 10V
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.04 RDS(ON), ON-RESISTANCE (OHM) ID = 7A 0.03
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100
o
ID = 14A VGS = 10V
0.02 TA = 125 C 0.01 TA = 25 C 0
o o
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
60 VDS =5V 50 ID, DRAIN CURRENT (A) 40 30 20 10 0 1 2 3
25 C 125 C
o
IS, REVERSE DRAIN CURRENT (A)
TA = -55 C
o
100
o
VGS=0 10 1 0.1 0.01 0.001 0.0001 TJ=125 C 25 C -55 C
o o o
4
5
0
0.2
0.4
0.6
0.8
1
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDD6680, Rev.B
FDD6680
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 14A 8
(continued)
VDS = 5V 15V
2500
10V
2000 CAPACITANCE (pF) CISS
f = 1 MHz V GS = 0 V
6
1500
4
1000
2
500
COSS CRSS
0 0 10 20 Qg, GATE CHARGE (nC) 30 40
0 0 5 10 15 20 25 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
RDS(ON) LIMIT
100µs 1ms 10ms 100ms
60 SINGLE PULSE RJA = 96 C/W TA = 25 C POWER (W) 40
o o
ID, DRAIN CURRENT (A)
10
1S 1 DC 0.1 VGS = 10V SINGLE PULSE RJA = 96 C/W TA = 25 C 0.01 0.1 1 10 100
o o
10S
20
0 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE TRANSI ENT THERMAL RESISTANCE D = 0.5 0.2
0.1
0.1 0.05 0.01
R JA (t) = r(t) * R JA R JA = 96°C/W
0.02 Single Pulse P(pk)
0.01
t1
t2
0.001
TJ - TA = P * R JA (t) Duty Cycle, D = t 1 / t 2
0.0001 0.0001
0.001
0.01
0.1 t , TIME (sec) 1
1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design.
FDD6680, Rev.B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST® FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. D
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