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Details, datasheet, quote on part number:FDD6680S.
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Datasheet text preview:
FDD6680S
December 2000
FDD6680S
30V N-Channel PowerTrench SyncFETTM
General Description
The FDD6680S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDD6680S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6680A in parallel with a Schottky diode.
Features
· 55 A, 30 V RDS(ON) = 11 m @ VGS = 10 V RDS(ON) = 17 m @ VGS = 4.5 V
· Includes SyncFET Schottky body diode · Low gate charge (17nC typical) · High performance trench technology for extremely low RDS(ON) · High power and current handling capability .
Applications
· DC/DC converter · Motor Drives
D
G S
TO-252
D
G
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
30 ±20
(Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b)
Units
V V A W
55 100 60 3.1 1.3 55 to +150
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RJC RJA RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
2.1 40 96
°C/W °C/W °C/W
Package Marking and Ordering Information
Device Marking FDD6680S Device FDD6680S Reel Size 13'' Tape width 16mm Quantity 2500 units
2001 Fairchild Semiconductor Corporation
FDD6680S Rev D(W)
FDD6680S
Electrical Characteristics
Symbol
WDSS IAR BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on)
TA = 25°C unless otherwise noted
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)
Test Conditions
Single Pulse, VDD = 15 V, ID=14A
Min
Typ
Max Units
245 14 mJ A V mV/°C 500 100 100 µA nA nA V mV/°C m
Drain-Source Avalanche Ratings (Note 2)
Off Characteristics
VGS = 0 V, ID = 1 mA ID = 1 mA, Referenced to 25°C VDS = 24 V, VGS = 20 V, VGS = 20 V, VGS = 0 V VDS = 0 V VDS = 0 V 1 2 3.3 9.5 13.5 17 50 27 2010 526 186 10 10 34 14 VDS = 15 V, VGS = 5 V ID = 12.5 A, 17 6.2 5.5 4.4
(Note 2) (Note 2) (Note 3)
30 19
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = VGS, ID = 1 mA ID = 1 mA, Referenced to 25°C VGS = 10 V, ID = 12.5 A ID = 10 A VGS = 4.5 V, VGS= 10 V, ID = 12.5A, TJ= 125°C VGS = 10 V, VDS = 15 V, VDS = 5 V ID = 12.5 A
3
11 17 23
ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD t rr Qrr
A S pF pF pF 18 18 55 23 24 ns ns ns ns nC nC nC A V nS nC
Dynamic Characteristics
VDS = 15 V, f = 1.0 MHz V GS = 0 V,
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
VDS = 15 V, VGS = 10 V,
ID = 1 A, RGEN = 6
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 4.4 A VGS = 0 V, IS = 7 A IF = 12.5A, diF/dt = 300 A/µs 0.49 0.56 20 19.7 0.7
FDD6680S Rev D (W)
FDD6680S
Electrical Characteristics
TA = 25°C unless otherwise noted
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) RJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper
b) RJA = 96°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as:
PD R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD6680S Rev D (W)
FDD6680S
Typical Characteristics
60 50 ID, DRAIN CURRENT (A) 40 30 20 10 0 0
2 4.5V 4.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 7.0V 5.0V 1.8 1.6 1.4 1.2 1 0.8 1 2 3 0 10 20 30 40 50 ID, DRAIN CURRENT (A)
VGS = 4.0V 4.5V 5.0V 6.0V
3.5V
7.0V
8.0V
10V
3.0V
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.04 RDS(ON), ON-RESISTANCE (OHM)
2.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 1.8 1.4 1 0.6 0.2 -50 -25 0 25 50 75 100
o
ID = 12.5A VGS = 10V
ID = 6.3A 0.03
0.02 TA = 100oC 0.01 TA = 25oC
125
150
0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
50 VDS = 5V ID, DRAIN CURRENT (A) 40 100oC TA = -55oC 25oC
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10 IS, REVERSE DRAIN CURRENT (A) VGS = 0V 1
30
0.1
TA = 100oC 25oC
20
0.01
-55oC
10
0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V)
0.001 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDD6680S Rev D (W)
FDD6680S
Typical Characteristics (continued)
10 VGS, GATE-SOURCE VOLTAGE (V) ID =12.5A 8 CAPACITANCE (pF) 15V 6 VDS = 5V 10V
3000 2500 2000 1500 1000 500 0 0 10 20 Qg, GATE CHARGE (nC) 30 40 0 10 20 30 VDS, DRAIN TO SOURCE VOLTAGE (V) COSS CRSS CISS f = 1MHz VGS = 0 V
4
2
0
Figure 7. Gate Charge Characteristics.
60 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 1ms 10ms 100ms 1s 1 10s VGS = 10V SINGLE PULSE RJA = 96oC/W TA = 25oC 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 50 40 30 20 10
Figure 8. Capacitance Characteristics.
ID, DRAIN CURRENT (A)
100
100µs
SINGLE PULSE RJA = 96°C/W TA = 25°C
0 0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05 0.02
RJA(t) = r(t) + RJA RJA = 96 °C/W P(pk) t1 t2
SINGLE PULSE
0.01
0.01
TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.001 0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDD6680S Rev D (W)
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