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Details, datasheet, quote on part number:FDD6685
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Datasheet text preview:
FDD6685
February 2004
FDD6685
30V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V).
Features
· 40 A, 30 V. RDS(ON) = 20 m @ VGS = 10 V RDS(ON) = 30 m @ VGS = 4.5 V · Fast switching speed · High performance trench technology for extremely low RDS(ON) · High power and current handling capability · Qualified to AEC Q101
S
G S
TO-252
D
G
D
Absolute Maximum Ratings
Symbol
VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage
TA=25oC unless otherwise noted
Parameter
Ratings 30
±25
Units
V V A W
Continuous Drain Current @TC=25°C (Note 3) @TA=25°C (Note 1a) Pulsed, PW 100µs (Note 1b) Power Dissipation for Single Operation
(Note 1) (Note 1a) (Note 1b)
40 11 100
52 3.8 1.6
PD
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +175
2.9 40 96
°C
Thermal Characteristics
RJC RJA RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
°C/W °C/W °C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2004 Fairchild Semiconductor Corporation
FDD6685 Rev D (W)
FDD6685 FDD6685
Package Marking and Ordering Information
Device Marking FDD6685 Device FDD6685 Reel Size 13" Tape Width 12mm Quantity 2500 units
Electrical Characteristics
Symbol
EAS IAS
TA = 25°C unless otherwise noted
Parameter
Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage
(Note 2)
Test Conditions
ID = 11 A
Min Typ Max
42 11
Units
mJ A
Drain-Source Avalanche Ratings (Note 4)
Off Characteristics
BVDSS BVDSS TJ IDSS I GSS VGS(th) VGS(th) TJ RDS(on) VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = ±25V, V GS = 0 V VDS = 0 V 1 1.8 5 14 21 20 20 26 1715 440 225 VGS = 15 mV,
(Note 2)
30 24 1 ±100 3
V mV/°C µA nA V mV/°C 20 30 m
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge DrainSource Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 11 A VGS = 4.5 V, ID = 9 A VGS = 10 V,ID = 11 A,TJ=125°C VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 11 A
ID(on) gFS Ciss Coss Crss RG td(on) tr t d(off) tf Qg Qgs Qgd VSD Trr Qrr
A S pF pF pF 31 21 68 34 24 ns ns ns ns nC nC nC 1.2 V ns nC
Dynamic Characteristics
VDS = 15 V, f = 1.0 MHz V GS = 0 V,
f = 1.0 MHz
3.6 17 11 43 21
Switching Characteristics
VDD = 15 V, VGS = 10 V,
ID = 1 A, RGEN = 6
VDS = 15V, VGS = 5 V
ID = 11 A,
17 9 4
DrainSource Diode Characteristics and Maximum Ratings
VGS = 0 V, IS = 3.2 A
(Note 2)
0.8 26 13
IF = 11 A, diF/dt = 100 A/µs
FDD6685 Rev D (W)
FDD6685
Electrical Characteristics
Notes:
TA = 25°C unless otherwise noted
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) RJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper
b) RJA = 96°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as:
PD RDS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V.
4. Starting TJ = 25°C, L = 0.69mH, IAS = 11A
FDD6685 Rev D (W)
FDD6685
Typical Characteristics
40
VGS = -10V -6.0V -5.0V
-4.5V
2.4 NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.0V 2.2 2 1.8 1.6 1.4 1.2 1 0.8 -4.0V -4.5V -5.0V -6.0V -8.0V -10V VGS = -3.5V
-ID, DRAIN CURRENT (A)
30
20
-3.5V
10 -3.0V
0 0 1 2 -VDS, DRAIN-SOURCE VOLTAGE (V) 3
0
2
4 6 -ID, DRAIN CURRENT (A)
8
10
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.08 RDS(ON), ON-RESISTANCE (OHM)
1.6 NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -11.0A VGS = -10V 1.4
ID = -5.5A 0.06
1.2
0.04
1
TA = 125 C
o
0.8
0.02
TA = 25 C
o
0.6 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 175
0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10
Figure 3. On-Resistance Variation with Temperature.
40 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 30 25 C 20
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 VGS = 0V 10 TA = 125 C 1 25oC 0.1 -55oC 0.01 0.001 0.0001
o
TA = -55oC
125 C
o
10
0 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) 5
0
0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDD6685 Rev D (W)
FDD6685
Typical Characteristics
10 -VGS, GATE-SOURCE VOLTAGE (V) ID = -11.0 A 8 VDS = 10V 30V 6 20V 4
2400
f = 1MHz VGS = 0 V
CAPACITANCE (pF)
1800
Ciss
1200
2
600
Crss
Coss
0 0 5 10 15 20 Qg, GATE CHARGE (nC) 25 30
0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30
Figure 7. Gate Charge Characteristics.
1000 P(pk), PEAK TRANSIENT POWER (W) 100
Figure 8. Capacitance Characteristics.
100 ID, DRAIN CURRENT (A) RDS(ON) LIMIT 10 1 10s DC VGS = 10V SINGLE PULSE RJA = 96oC/W TA = 25oC 0.01 0.01 1ms 10ms 100ms
100µs
80
SINGLE PULSE RJA = 96°C/W TA = 25°C
60
1
40
0.1
20
0.10 1.00 10.00 VDS, DRAIN-SOURCE VOLTAGE (V)
100.00
0 0.01
0.1
1 10 t1, TIME (sec)
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05 0.02 0.01
RJA(t) = r(t) * RJA RJA = 96 °C/W P(pk) t1 t2
SINGLE PULSE
0.01
TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.001 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDD6685 Rev D (W)
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