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Details, datasheet, quote on part number:FDD6688S
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Datasheet text preview:
FDD6688S
May 2004
FDD6688S
30V N-Channel PowerTrench SyncFETTM
General Description
The FDD6688S is designed to replace a single TO-252 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6688S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. Applications · DC/DC converter · Motor Drives
Features
· 88 A, 30 V. RDS(ON) = 5.1 m @ VGS = 10 V RDS(ON) = 6.3 m @ VGS = 4.5 V · Low gate charge (31 nC typical) · Fast switching · High performance trench technology for extremely low RDS(ON)
D
G S
D
G
DO-252 T -PAK (TO-252)
TA=25oC unless otherwise noted
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
Parameter
Ratings
30 ± 20
(Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b)
Units
V A W
88 100 69 3.1 1.3 55 to +150
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
1.8 40 96
°C/W
Package Marking and Ordering Information
Device Marking FDD6688S Device FDD6688S Package D-PAK (TO-252) Reel Size 13'' Tape width 12mm Quantity 2500 units
2004 Fairchild Semiconductor Corporation
FDD6688 Rev C (W)
FDD6688S
Electrical Characteristics
Symbol
WDSS IAR
TA = 25°C unless otherwise noted
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage
(Note 2)
Test Conditions
Single Pulse, VDD = 15 V, ID = 21A
Min Typ
501
Max
Units
mJ
Drain-Source Avalanche Ratings (Note 2)
21 VGS = 0 V, ID = 1mA 30 30 500 ± 100 1 1.4 0.3 4.0 4.7 6.0 72 3 A V mV/°C µA nA V mV/°C 5.1 6.3 7.5
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS ID = 15mA, Referenced to 25°C VDS = 24 V, VGS = ± 20 V, VDS = VGS, VG S = 0 V V DS = 0 V ID = 1mA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance Forward Transconductance
ID = 15mA, Referenced to 25°C VGS = 10 V, ID = 18.5 A VGS = 4.5 V, ID = 16.5 A VGS = 10 V, ID = 18.5 A, TJ=125°C VDS = 5 V, ID = 18.5 A
m S
gF S
Dynamic Characteristics
Ciss Coss Crss RG td(on) tr td(off) tf Qg(TOT) Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 15 V, f = 1.0 MHz VGS = 15 mV,
V GS = 0 V,
3290 900 300 1.6
pF pF pF 23 23 50 103 81 44 ns ns ns ns nC nC nC nC
f = 1.0 MHz
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time
13 VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 13 31 64 58 VDD = 15 V, ID = 18.5 A 31 8 10
Total Gate Charge at Vgs=10V Total Gate Charge at Vgs=5V GateSource Charge GateDrain Charge
FDS6688S Rev C (W)
FDD6688S
Electrical Characteristics (continued)
Symbol
VSD tr r Qrr Ir r
TA = 25°C unless otherwise noted
Parameter
DrainSource Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge Diode Reverse Recovery Current
Test Conditions
VGS = 0 V, IF = 18.5 A, IS = 4.4 A
(Note 2)
Min Typ
400 28 30 2.1
Max
700
Units
mV ns nC A
DrainSource Diode Characteristics and Maximum Ratings
diF/dt = 300 A/µs
Notes:8 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) RJA = 40°C/W when mounted on a
2 1in pad of 2 oz copper
b) RJA = 96°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as:
PD R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDS6688S Rev C (W)
FDD6688S
Typical Characteristics
100 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 80 ID, DRAIN CURRENT (A) 4.5V 60 4.0V 3.0V 3.5V
2.3
VGS = 3.0V 1.8
40
3.5V 1.3 4.0V 4.5V
20
5.0V
6.0V 10V
2.5V
0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2
0.8 0 20 40 60 ID, DRAIN CURRENT (A) 80 100
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.014 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID = 88A VGS =10V
ID = 44A 0.012 0.01 0.008 0.006 0.004 0.002 TA =25oC TA = 125oC
1.4
1.2
1
0.8
0.6 -5 0 - 25 0 25 50 75 1 00 o TJ, JUNCTION TEMPERATURE ( C) 12 5 150
2
4 6 8 VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with Temperature.
100 VDS = 5V 80 ID, DRAIN CURRENT (A) IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 VGS = 0V
10
TA = 125oC
60
1
25 C
o
40
TA = 125 C
o
-55oC
-55oC 0.1
20 25 C 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 3.5
o
0.01 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) 1
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature
FDS6688S Rev C (W)
FDD6688S
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 88A 8 VDS = 10V 20V 6 15V 4 CAPACITANCE (pF)
5000 f = 1MHz VGS = 0 V
4000
3000
Ciss
2000 Coss 1000 Crss
2
0 0 10 20 30 40 Qg, GATE CHARGE (nC) 50 60
0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30
Figure 7. Gate Charge Characteristics
1000
P(pk), PEAK TRANSIENT POWER (W) 50
Figure 8. Capacitance Characteristics
ID, DRAIN CURRENT (A)
100
RDS(ON) LIMIT
10
1
VGS = 10V SINGLE PULSE o RJA = 96 C/W TA = 25oC
100us 1ms 10ms 100ms 1s 10s DC
40
SINGLE PULSE RJA = 96°C/W TA = 25°C
30
20
0.1
10
0.01 0.01
0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V)
100
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power Dissipation
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) * RJA RJA = 96 °C/W
0.1
0.1 0.05
P(pk
0.01
0.02 0.01
SINGLE PULSE
t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.001 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDS6688S Rev C (W)
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