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Details, datasheet, quote on part number:FDD6692
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Datasheet text preview:
FDD6692/FDU6692
April 2001
FDD6692/FDU6692
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
Features
· 54 A, 30 V. RDS(ON) = 12 m @ VGS = 10 V RDS(ON) = 14.5 m @ VGS = 4.5 V
· Low gate charge (18 nC typical) · Fast switching · High performance trench technology for extremely low RDS(ON)
Applications
· DC/DC converter · Motor drives
D
G S
D
I-PAK (TO-251AA) GDS
G
DO -252 T -PAK (TO-252)
S
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
Parameter
Ratings
30 ±16
(Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b)
Units
V V A W
54 162 57 3.8 1.6 -55 to +175
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RJC RJA RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
2.6 40 96
°C/W °C/W °C/W
Package Marking and Ordering Information
Device Marking FDD6692 FDU6692 Device FDD6692 FDU6692 Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13'' Tube Tape width 12mm N/A Quantity 2500 units 75
2001 Fairchild Semiconductor Corporation
FDD/FDU6692 Rev C(W)
FDD6692/FDU6692
Electrical Characteristics
Symbol
W DSS IAR BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on)
TA = 25°C unless otherwise noted
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)
Test Conditions
Single Pulse, VDD = 15 V, ID=14A
Min
Typ
Max Units
165 14 mJ A V
Drain-Source Avalanche Ratings (Note 2)
Off Characteristics
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 16 V, VGS = 16 V, VG S = 0 V VDS = 0 V VDS = 0 V 1 1.6 5 9.5 11.5 16.5 50 54 2164 357 138 VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 9 5 35 10 VDS = 15 V, VGS = 5 V ID = 14 A, 18 5 5 3.2
(Note 2)
30 26 1 100 100 3
mV/°C µA nA nA V mV/°C 12 14.5 18 m
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 14 A ID = 13 A VGS = 4.5 V, VGS = 10 V, ID = 14 A, TJ = 125°C VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 14 A
ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD
A S pF pF pF 18 10 56 20 25 ns ns ns ns nC nC nC A V
Dynamic Characteristics
VDS = 15 V, f = 1.0 MHz V GS = 0 V,
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward Voltage VGS = 0 V, IS = 3.2 A 0.72 1.2
FDD/ FDU6692 Rev. C(W)
FDD6692/FDU6692
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) RJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper
b) RJA = 96°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as:
PD R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD/ FDU6692 Rev. C(W)
FDD6692/FDU6692
Typical Characteristics
50 6.0V 4.5V 3.5V 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V ID, DRAIN CURRENT (A) 40 2.25 2 1.75 1.5 3.5V 1.25 1 0.75 0 0.5 1 1.5 2 2.5 0 10 20 30 40 50 ID, DRAIN CURRENT (A) 4.5V 6.0V 10V VGS = 3.0V
30
20
10
2.5V
0 VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.03 RDS(ON), ON-RESISTANCE (OHM)
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100
o
ID = 14A VGS = 10V
ID = 7.0 A 0.025
0.02 TA = 125oC 0.015
0.01
TA = 25oC
125
150
0.005 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
50 VDS = 5V ID, DRAIN CURRENT (A) 40
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 IS, REVERSE DRAIN CURRENT (A) VGS = 0V 10 1 0.1 0.01 0.001 0.0001 TA = 125oC 25oC -55oC
TA = -55oC
25oC 125oC
30
20
10
0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDD/ FDU6692 Rev. C(W)
FDD6692/FDU6692
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 14A 8 20V 6 CAPACITANCE (pF) VDS = 10V 15V 2500 CISS 2000 1500 1000 500 CRSS 0 0 5 10 15 20 25 30 35 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) COSS 3000 f = 1MHz VGS = 0 V
4
2
Figure 7. Gate Charge Characteristics.
1000 P(pk), PEAK TRANSIENT POWER (W) 100µs RDS(ON) LIMIT 10 1ms 10ms 100ms 1s 10s 1 VGS = 10V SINGLE PULSE RJA = 96oC/W TA = 25oC 0.01 0.01 0.1 1 10 100 DC 80
Figure 8. Capacitance Characteristics.
ID, DRAIN CURRENT (A)
100
60
SINGLE PULSE RJA = 96°C/W TA = 25°C
40
0.1
20
0 0.1 1 10 t1, TIME (sec) 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0. 2
R JA (t) = r(t) + R JA R JA = 96 °C/W
0 .0 5 0.02
0 .1
0.1
P (p k ) t1 t2 T J - T A = P * R JA (t ) D u t y Cycle, D = t1 / t2
0 . 01
0.01
S I N G LE PULSE
0.001 0.001
0 .0 1
0 .1
1 t1 , TIME (sec)
10
1 00
1 000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDD/ FDU6692 Rev. C(W)
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