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Details, datasheet, quote on part number:FDD6696
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Datasheet text preview:
FDD6696/FDU6696
December 2002
FDD6696/FDU6696
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
Features
· 50A, 30 V RDS(ON) = 8.0 m @ V GS = 10 V RDS(ON) = 10.7 m @ V GS = 4.5 V
· Low gate charge (17nC typical) · Fast switching · High performance trench technology for extremely low RDS(ON)
Applications
· DC/DC converter · Motor drives
D
G S
D
I-PAK (TO-251AA) GDS
G
DO-252 T -PAK (TO-252)
S
T A=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
V DSS V GSS ID Drain-Source Voltage Gate-Source Voltage
Parameter
Ratings
30 ± 16
(Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b)
Unit s
V A
Continuous Drain Current @TC=25°C @TA =25°C Pulsed
50 13 100 52 3.8 1.6 55 to +175
PD
Power Dissipation
@TC=25°C @TA =25°C @TA =25°C
W
TJ , TS T G
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R J C R J A Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
2.9 40 96
°C/W
Package Marking and Ordering Information
Device Marking FDD6696 FDU6696 Device FDD6696 FDU6696 Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13'' Tube Tape width 12mm N/A Quantity 2500 units 75
© 2002 Fairchild Semiconductor Corporation
FDD6696/FDU6696 Rev D (W)
FDD6696/FDU6696
Electrical Characteristics
Symbol Parameter Drain-Source Avalanche Ratings
EA S IA S BV DSS BV DSS TJ IDSS IGSSF V GS(th) V GS(th) TJ RDS(on)
TA = 25°C unless otherwise noted
Test Conditions
(Note 2)
Min
Typ
Max
Unit s
mJ A V
Drain-Source Avalanche Energy Drain-Source Avalanche Current
Single Pulse, V DD = 15 V, ID=13A
165 13 30 23 10 ± 100 1 2 5 6.7 8.6 10.2 51 1715 410 180 3
Off Characteristics
DrainSource Breakdown V GS = 0 V, ID = 250 µA Voltage Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C Coefficient Zero Gate Voltage Drain Current GateBody Leakage
(Note 2)
mV/°C µA nA V mV/°C m
V DS = 24 V, V GS =± 16 V,
V GS = 0 V V DS = 0 V
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
V DS = V GS , ID = 250 µA ID = 250 µA, Referenced to 25°C V GS = 10 V, ID = 13 A V GS = 4.5 V, ID = 12 A V GS = 10 V, ID = 13 A, TJ =125°C V DS = 5 V, ID = 13 A V DS = 15 V, f = 1.0 MHz V GS = 15 mV, V DD = 15 V, V GS = 10 V, V GS = 0 V,
8.0 10.7 15.0
gFS Ci s s Co s s Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS V SD trr Qrr
Notes:
S pF pF pF 23 9 43 31 24 ns ns ns ns nC nC nC 13 A V nS nC
Dynamic Characteristics
f = 1.0 MHz ID = 13 A, RGEN = 6
1.3 13 4 27 17
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
V DS = 15V, V GS = 5 V
ID = 13 A,
17 5 6
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward V GS = 0 V, IS = 13 A Voltage Diode Reverse Recovery Time IF = 13 A, Diode Reverse Recovery Charge di F/dt = 100 A/µs
(Note 2)
0.8 27 15
1.2
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while R CA is determined by the user's board design.
a) RJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper
b) RJA = 96°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: current limitation is 21A
PD R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ ( m a x ) and VG S = 10V. Package
FDD6696/FDU6696 Rev. D (W)
FDD6696/FDU6696
Typical Characteristics
100
VGS =10V 6.0V
4.5V R D S ( O N , NORMALIZED ) DRAIN-SOURCE ON-RESISTANCE 5.0V 4.0V
2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 4.0V 4.5V 5.0V 6.0V 10V VGS = 3.5V
80 ID , DRAIN CURRENT (A)
60 3.5V
40
20 3.0V 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V)
0
20
40
60
80
100
ID , DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage
0.022 R DS(ON), ON-RESISTANCE (OHM)
1.8 RD S ( O N , NORMALIZED ) DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 ID = 50A VGS = 10V
ID = 25A
0.018
0.014
TA = 125 C
o
0.01
T A = 25 C
0.006
o
0.002
-25
0
25
50
75
100
o
125
150
175
2
4
6
8
10
TJ , JUNCTION TEMPERATURE ( C)
V GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature
60
Figure 4. On-Resistance Variation with Gate-to-Source Voltage
100
VGS = 0V
VDS = 5V
ID, DRAIN CURRENT (A) 40
IS , REVERSE DRAIN CURRENT (A)
10 1 0.1 0.01 0.001
T A = 125 C 25 C -55 C
o o o
20
TA =125 C 25 C
o
o
-55 C
0 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V)
o
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature
FDD6696/FDU6696 Rev. D (W)
FDD6696/FDU6696
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 13A 8
VD S = 10V 15V
2500
f = 1MHz V GS = 0 V Ciss
2000 CAPACITANCE (pF)
20V 6
1500
4
1000
Coss
2
500
Crss
0 0 10 20 Q g, GATE CHARGE (nC) 30 40
0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
1000 R DS(ON) LIMIT 100 ID , DRAIN CURRENT (A) 100µs 1ms 10ms 100ms 1s VGS = 10V SINGLE PULSE o RJ A = 96 C/W TA = 25 C 0.01 0.01 0.1 1 10 100
o
Figure 8. Capacitance Characteristics
100 P(pk), PEAK TRANSIENT POWER (W)
80
SINGLE PULSE RJ A = 96°C/W TA = 25°C
10 10s DC
60
1
40
0.1
20
0 0.01 0.1 1 10 100 1000
VD S, DRAIN-SOURCE VOLTAGE (V)
t1 , TIME (sec)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power Dissipation
1
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2
0.1
0.1 0.05 0.02
RJA(t) = r(t) * RJA RJA = 96 °C/W P(pk) t1 t2
SINGLE PULSE
0.01
0.01
TJ - TA = P * R JA( t ) Duty Cycle, D = t 1 / t2
0.001 0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDD6696/FDU6696 Rev. D (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrenchâ MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERâ OPTOLOGICâ SMART START OPTOPLANAR
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I1
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