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Details, datasheet, quote on part number:FDD7030BL
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Datasheet text preview:
FDD7030BL/FDU7030BL
December 2001
FDD7030BL/FDU7030BL
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.
Features
· 56 A, 30 V RDS(ON) = 9.5 m @ V GS = 10 V RDS(ON) = 13 m @ V GS = 4.5 V
· Low gate c harge (23nC typ.) · Fast Switching · High performance trench technology for extremely low RDS(ON)
Applications
· DC/DC converter · Motor Drives
D
G S DO-252 T-PAK (TO-252)
D
I-PAK (TO-251AA) GDS
G
S
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
V DSS V GSS ID Drain-Source Voltage Gate-Source Voltage
Parameter
Ratings
30 ±20
(Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b)
Units
V V A
Continuous Drain Current @TC=25°C @TA =25°C Pulsed
56 14 100 60 2.8 1.3 -55 to +175
PD
Power Dissipation
@TC=25°C @TA =25°C @TA =25°C
W
TJ , TS T G
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R J C R J A R J A Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
2.1 45 96
°C/W °C/W °C/W
Package Marking and Ordering Information
Device Marking FDD7030BL FDU7030BL Device FDD7030BL FDU7030BL Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13'' Tube Tape width 12mm N/A Quantity 2500 units 75
©2001 Fairchild Semiconductor Corp.
FDD7030BL/FDU7030BL Rev A(W)
FDD7030BL/FDU7030BL
Electrical Characteristics
Symbol
EA S IA S BV DSS BVDSS TJ IDSS IGSSF IGSSR V GS(th) VGS(th) TJ RDS(on) ID(on) gFS Ci s s Co s s Crss td(on) tr td(off) tf Qg Qgs Qgd IS V SD
Notes:
TA = 25°C unless otherwise noted
Parameter
(Note 2)
Test Conditions
Single Pulse, V DD = 15 V, ID=14A
Min
Typ Max
200 56
Units
mJ A V
Drain-Source Avalanche Ratings
Drain-Source Avalanche Energy Drain-Source Avalanche Current
Off Characteristics
DrainSource Breakdown Voltage V GS = 0 V, ID = 250 µA Breakdown Voltage Temperature ID = 250 µA,Referenced to 25°C Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)
30 23 1 100 100 1 1.5 -4 8 10 12 50 41 2180 500 255 13 24 26 70 27 33 3
mV/°C µA nA nA V mV/°C m A S pF pF pF ns ns ns ns nC nC nC 2.3 A V
V DS = 24 V, V GS = 20 V, V GS = 20 V
V GS = 0 V V DS = 0 V V DS = 0 V
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
V DS = V GS , ID = 250 µA ID = 250 µA,Referenced to 25°C V GS V GS V GS V GS = 10 V, ID = 14 A = 4.5 V, ID = 12 A = 10 V, ID = 14 A,TJ =125°C = 10 V, V DS = 5 V ID = 9.5 A
9.5 13 16
V DS = 5 V,
Dynamic Characteristics
V DS = 15 V, f = 1.0 MHz V GS = 0 V,
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
V DD = 15 V, V GS = 10 V,
ID = 1 A, RGEN = 6
14 43 15 23 7 11
V DS = 40V, V GS = 5 V
ID = 9.5 A,
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward Voltage V GS = 0 V, IS = 2.3 A
(Note 2)
0.72
1.2
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) RJA = 45°C/W when mounted on a 1in2 pad of 2 oz copper
b) RJA = 96°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ ( max) and VGS = 10V. Package current limitation is 21A
FDD7030BL/FDU7030BL Rev. A(W)
FDD7030BL/FDU7030BL
Typical Characteristics
50 ID , DRAIN-SOURCE CURRENT (A) 4.5V 40 3.5V 3.0V 30 RD S ( O N ) , NORMALIZED D R A I N - S O U R C E ON-RESISTANCE V G S = 10V
2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 1 2 3 0 10 20 I D, DRAIN CURRENT (A) 30 40 V D S , DRAIN-SOURCE VOLTAGE (V) 3.5V 4.0V 4.5V 6.0V 10V V G S = 3.0V
20 2.5V
10
0
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage
0.03 R D S ( O N ) , ON-RESISTANCE (OHM)
1.6 RD S ( O N ), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID = 14A V G S = 10V
ID = 7 A 0.025 0.02 0.015 0.01 0.005 0 2 4 6 8 10 V G S, GATE TO SOURCE VOLTAGE (V) TA = 25 C
o
1.4
1.2
TA = 125o C
1
0.8
0.6 -50 -25 0 25 50 75 100
o
125
150
T J , JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation withTemperature
50 IS , REVERSE DRAIN CURRENT (A) V D S = 5V ID , DRAIN CURRENT (A) 40 TA = -55 C
o o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage
100 V G S = 0V
25 C 125 C
o
10 1 0.1 0.01 0.001 0.0001 TA = 125 C 25o C -55 C
o o
30
20
10
0 1 2 3 4 5 V G S, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
V S D , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature
FDD7030BL/FDU7030BL Rev. A(W)
FDD7030BL/FDU7030BL
Typical Characteristics
10 V G S, GATE-SOURCE VOLTAGE (V) ID = 14A 8
V D S = 5V 15V
3500 10V C A P A C I T A N C E (pF) 3000 2500 2000 1500 1000 500 0 CO S S CR S S 0 5 10 15 20 25 30 CI S S f = 1MHz VG S = 0 V
6
4
2
0 0 10 20 30 40 50 Qg , GATE CHARGE (nC)
V D S, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
1000 P(pk), PEAK TRANSIENT POWER (W) RD S ( O N ) LIMIT 200
Figure 8. Capacitance Characteristics
ID, DRAIN CURRENT (A)
100
100µ s 1ms 10ms 100ms 1s 10s
150
SINGLE PULSE R JA = 96 °C/W T A = 25°C
10
100
1
0.1
V G S = 10V SINGLE PULSE R JA = 96 o C/W T A = 25 C
o
DC
50
0.01 0.1 1 10 100 V D S , DRAIN-SOURCE VOLTAGE (V)
0 0.001
0.01
0.1
1
10
100
t1 , TIME (sec)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power Dissipation
TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
r(t), NORMALIZED EFFECTIVE
0.1
0.1 0.05 0.01
R J A (t) = r(t) * R J A R J A = 96°C/W
0.02 Single Pulse P(pk)
0.01
t1
0.001
t2
TJ - TA = P * R JA (t) Duty Cycle, D = t 1 / t 2
0.0001 0.0001
0.001
0.01
0.1 t , TIME (sec) 1
1
10
100
300
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDD7030BL/FDU7030BL Rev. A(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series
DISCLAIMER
FAST â FASTr FRFET GlobalOptoisolator GTO HiSeC I2C ISOPLANAR LittleFET MicroFET MicroPak
MICROWIRE OPTOLOGIC â OPTOPLANAR PACMAN POP Power247 PowerTrench â QFET QS QT Optoelectronics Quiet Series
SILENT SWITCHER â UHC SMART START UltraFET â SPM VCX STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. H5
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