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Details, datasheet, quote on part number:FDP060AN08A0T
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Datasheet text preview:
FDB060AN08A0 / FDP060AN08A0
November 2002
FDB060AN08A0 / FDP060AN08A0
N-Channel PowerTrench® MOSFET 75V, 80A, 6.0m
Features
· r D S(ON) = 4.8m (Typ.), V GS = 10V, ID = 80A · Qg(tot) = 73nC (Typ.), VGS = 10V · Low Miller Charge · Low QRR Body Diode · UIS Capability (Single Pulse and Repetitive Pulse) · Qualified to AEC Q101
Formerly developmental type 82680
Applications
· 42V Automotive Load Control · Star ter / Alternator Systems · Electronic Power Steering Systems · Electronic Valve Train Systems · DC-DC converters and Off-line UPS · Distr ibuted Power Architectures and VRMs · Pr imar y Switch for 24V and 48V systems
DRAI N (FLANGE)
D
SOURCE DRAIN GATE SOURCE TO-2 20AB FDP SERIES TO-26 3AB FDB SERIES DRAIN (FLANGE) GATE
G S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VD SS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC < 127oC, VGS = 10V) Continuous (Tamb = 25oC , VGS = 10V, with R JA = 43oC/W) Pulsed E AS PD TJ, TST G Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 80 16 Figure 4 350 255 1.7 -55 to 175 A A A mJ W W/oC
o
Ratings 75 ±20
Units V V
C
Thermal Characteristics
R JC R JA R JA Thermal Resistance Junction to Case TO-220,TO-263 Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 0.58 62 43
o o o
C/W C/W C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reli ability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2002 Fairchild Semiconductor Corporation
FDB 0 60 A N 08 A 0 / FDP060AN08A0 Rev. A
FDB060AN08A0 / FDP060AN08A0
Package Marking and Ordering Information
Device Marking FDB 060AN08A0 FDP 060AN08A0 Device FDB060AN08A0 FDP060AN08A0 Package TO-263AB TO-220AB Reel Size 330mm Tube Tape Width 24mm N/A Quantity 800 units 50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS ID SS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V V D S = 60V VGS = 0V VGS = ±20V TC = 150oC 75 1 250 ±100 V µA nA
On Characteristics
VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ID = 80A, VGS = 10V rD S ( O N ) Drain to Source On Resistance ID = 40A, VGS = 6V ID = 80A, VGS = 10V, TJ = 175oC 2 0.0048 0.0066 0.010 4 0.006 0.010 0.013 V
Dynamic Characteristics
CISS CO S S CR S S Qg(TOT) Q g ( TH ) Qg s Qgs2 Qg d Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge V D S = 25V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 2V VD D = 40V ID = 80A Ig = 1.0mA 5150 800 230 73 10 29 19 16 95 13 pF pF pF nC nC nC nC nC
Switching Characteristics (VGS = 10V)
tON t d ( O N) tr t d ( O FF) tf t O FF Tur n- On Time Tur n- On Delay Time Rise Time Tur n- Off Delay Time Fall Time Tur n- Off Time V D D = 40V, ID = 80A VGS = 10V, RGS = 3.9 19 79 37 38 147 113 ns ns ns ns ns ns
Drain-Source Diode Characteristics
V SD t rr Q RR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 80A ISD = 40A ISD = 75A, dISD/dt = 100A/µs ISD = 75A, dISD/dt = 100A/µs 1.25 1.0 37 38 V V ns nC
Notes: 1: Starting TJ = 25°C, L = 109µH, IAS = 80A. 2: Pulse width = 100s
©2002 Fairchild Semiconductor Corporation
FDB 0 60 A N 08 A 0 / FDP060AN08A0 Rev. A
FDB060AN08A0 / FDP060AN08A0
Typical Characteristics TC = 25°C unless otherwise noted
1.2 150 CURRENT LIMITED BY PACKAGE 125 ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.0
0.8
100
0.6
75
0.4
50
0.2
25
0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (o C)
0 25 50 75 100 125 (oC) 150 175
TC, CASE TEMPERATURE
Figure 1. Normalized Power Dissipation vs Ambient Temperature
2 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
Figure 2. Maximum Continuous Drain Current vs Case Temperature
ZJC, NORMALIZED THERMAL IMPEDANCE
PD M 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x R J C + TC 10-3 10-2 t , RECTANGULAR PULSE DURATION (s) 10-1 100 101
SINGLE PULSE 0.01 10-5 10-4
Figure 3. Normalized Maximum Transient Thermal Impedance
2000 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION
TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 VGS = 10V 175 - TC 150
1000 IDM, PEAK CURRENT (A) 100 70 10-5
10- 4
10- 3
10-2 t , PULSE WIDTH (s)
10 -1
100
101
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation
FDB 0 60 A N 08 A 0 / FDP060AN08A0 Rev. A
FDB060AN08A0 / FDP060AN08A0
Typical Characteristics TC = 25°C unless otherwise noted
1000 10µs ID, DRAIN CURRENT (A) 100 100µs 1m s 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) DC 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 10ms IAS, AVALANCHE CURRENT (A) 100 500 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(I AS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
10 STARTING TJ = 150oC
1 0.01
0.1 1 10 tAV, TIME IN AVALANCHE (ms)
100
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching Capability
175 VGS = 10V 150 ID, DRAIN CURRENT (A) VGS = 6V 125 100 75 VGS = 5V 50 TC = 25o C 25 0 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 0 0 .5 1.0 1.5 2.0 VGS = 7V
175 150 ID , DRAIN CURRENT (A) 125 100
PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDD = 15V
TJ = 175o C 75 50 25 0 3.5 4 .0 4.5 5 .0 5.5 VGS , GATE TO SOURCE VOLTAGE (V) 6.0
TJ = 25oC
TJ = -55oC
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
7.5 DRAIN TO SOURCE ON RESISTANCE(m) 7.0 6.5 VGS = 6V 6.0 5.5 5.0 4.5 4.0 0 20 40 ID, DRAIN CURRENT (A) 60 80 VGS = 10V NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 2.5
Figure 8. Saturation Characteristics
PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 2.0
1.5
1.0
VGS = 10V, ID = 80A 0.5 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC ) 200
Figure 9. Drain to Source On Resistance vs Drain Current
Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature
©2002 Fairchild Semiconductor Corporation
FDB 0 60 A N 08 A 0 / FDP060AN08A0 Rev. A
FDB060AN08A0 / FDP060AN08A0
Typical Characteristics TC = 25°C unless otherwise noted
1.2 VGS = VDS, ID = 250µA N ORMALIZED DRAIN TO SOURCE BREAK DOWN VOLTAGE 1.2 ID = 250µA
NORMALIZED GATE THRESHOLD VOLTAGE
1.0
1.1
0.8
1.0
0.6
0.4 -80
-40
0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC)
200
0.9 - 80
-40
0 40 80 120 160 TJ , JUNCTION TEMPERATURE (o C)
200
Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature
7000 CISS = CGS + CGD C, CAPACITANCE (pF) COSS CDS + C GD
Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature
10 VDD = 40V VGS , GATE TO SOURCE VOLTAGE (V) 8
6
1000
CRSS = CGD
4 WAVEFORMS IN DESCENDING ORDER: ID = 80A ID = 16A 0 20 40 Qg, GATE CHARGE (nC) 60 80
2
VGS = 0V, f = 1MHz 100 0.1 1 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 75
0
Figure 13. Capacitance vs Drain to Source Voltage
Figure 14. Gate Charge Waveforms for Constant Gate Current
©2002 Fairchild Semiconductor Corporation
FDB 0 60 A N 08 A 0 / FDP060AN08A0 Rev. A
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