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Details, datasheet, quote on part number:FDP10AN06A0T
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Datasheet text preview:
FDB10AN06A0 / FDP10AN06A0
July 2002
FDB10AN06A0 / FDP10AN06A0
N-Channel PowerTrench® MOSFET 60V, 75A, 10.5m
Features
· r D S(ON) = 9.5m (Typ.), V GS = 10V, ID = 75A · Qg(tot) = 28nC (Typ.), VGS = 10V · Low Miller Charge · Low Qrr Body Diode · UIS Capability (Single Pulse and Repetitive Pulse) · Qualified to AEC Q101
Formerly developmental type 82560
Applications
· Motor / Body Load Control · ABS Systems · Power train Management · Injection Systems · DC-DC converters and Off-line UPS · Distr ibuted Power Architectures and VRMs · Pr imar y Switch for 12V and 24V systems
D
DRAIN (FLANGE) SOURCE DRAIN GATE SOURCE GATE
G
TO-220AB
FDP SERIES
TO-263AB
FDB SERIES
DRAIN (FLANGE)
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VD SS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC , VGS = 10V) with R JA = 43oC/W) Pulsed E AS PD TJ, TST G Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 75 54 12 Figure 4 429 135 0.9 -55 to 175 A A A A mJ W W/oC
o
Ratings 60 ±20
Units V V
C
Thermal Characteristics
R JC R JA R JA Thermal Resistance Junction to Case TO-220, TO-263 Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 1.11 62 43
o o o
C/W C/W C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2002 Fairchild Semiconductor Corporation FDB10AN06A0 / FDP10AN06A0 Rev. A
FDB10AN06A0 / FDP10AN06A0
Package Marking and Ordering Information
Device Marking FDB10AN06A0 FDP10AN06A0 Device FDB10AN 06A0 FDP10AN 06A0 Package TO-263AB TO-220AB Reel Size 330mm Tube Tape Width 24mm N/A Quantity 800 units 50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B VDSS ID SS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VD S = 50V VGS = 0V VGS = ±20V TC = 150oC 60 1 250 ±100 V µA nA
On Characteristics
VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ID = 75A, VGS = 10V rD S ( O N ) Drain to Source On Resistance ID = 37A, VGS = 6V ID = 75A, VGS = 10V, TJ = 175oC 2 0.017 0.021 4 0.027 0.023 V 0.0095 0.0105
Dynamic Characteristics
CISS CO S S CR S S Qg(TOT) Q g ( TH ) Qg s Qgs2 Qg d Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge VD S = 25V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 2V VD D = 30V ID = 75A Ig = 1.0mA 1840 340 110 28 3.5 11.7 8.2 7.4 37 4.6 pF pF pF nC nC nC nC nC
Switching Characteristics (VGS = 10V)
tON t d ( O N) tr t d ( O FF) tf t O FF Tur n- On Time Tur n- On Delay Time Rise Time Tur n- Off Delay Time Fall Time Tur n- Off Time VD D = 30V, ID = 75A VGS = 10V, RGS = 10 8 128 27 36 206 94 ns ns ns ns ns ns
Drain-Source Diode Characteristics
V SD t rr Q RR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 75A ISD = 40A ISD = 75A, dISD/dt = 100A/µs ISD = 75A, dISD/dt = 100A/µs 1.25 1.0 27 23 V V ns nC
Notes: 1: Starting TJ = 25°C, L = 8.58mH, IAS = 10A. 2: Pulse Width = 100s
©2002 Fairchild Semiconductor Corporation
FDB 1 0A N0 6A 0 / FDP10AN06A0 Rev. A
FDB10AN06A0 / FDP10AN06A0
Typical Characteristics TC = 25°C unless otherwise noted
1.2 80
POWER DISSIPATION MULTIPLIER
1.0 ID, DRAIN CURRENT (A) 0 25 50 75 100 125 150 175 60
0.8
0.6
40
0.4
20
0.2
0 TC , CASE TEMPERATURE (oC)
0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (o C)
Figure 1. Normalized Power Dissipation vs Ambient Temperature
2 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
Figure 2. Maximum Continuous Drain Current vs Case Temperature
ZJC, NORMALIZED THER MAL IMPEDANCE
PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-3 10-2 t , RECTANGULAR PULSE DURATION (s) 10-1 100 101
SINGLE PULSE 0.01 10- 5 10- 4
Figure 3. Normalized Maximum Transient Thermal Impedance
1000 TRANSCONDUCTA NCE MAY LIMIT CURRENT IN THIS REGION
TC = 25 oC FOR TEMPERATURES ABOVE 25 oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 VGS = 10V 175 - TC 150
IDM, PEAK CURRENT (A) 100 70 10-5
10-4
10 -3
10-2 t , PULSE WIDTH (s)
10-1
100
101
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation
FDB 1 0A N0 6A 0 / FDP10AN06A0 Rev. A
FDB10AN06A0 / FDP10AN06A0
Typical Characteristics TC = 25°C unless otherwise noted
500 10µs 100 ID, DRAIN CURRENT (A) 100µs IAS, AVALANCHE CURRENT (A) 100 500 If R = 0 tAV = (L)(IAS)/(1.3*R ATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
1ms 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) DC 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 10ms
STARTIN G TJ = 25oC
10
STARTING TJ = 150oC 1
0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100
0.01
0.1 1 tAV, TIME IN AVALANCHE (ms)
10
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching Capability
150
150 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDD = 15V TJ = 25oC 100 ID, DRAIN CURRENT (A)
VGS = 10V 125
VGS = 7V
125 ID, DRAIN CURRENT (A)
100 VGS = 6V
75
75
50 TJ = 175 oC 25 TJ = -55 oC 0 4 5 6 7 VGS , GATE TO SOURCE VOLTAGE (V) 8
50
TC = 25oC PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX
25 VGS = 5V 0 0 1 2 3 VDS , DRAIN TO SOURCE VOLTAGE (V) 4
Figure 7. Transfer Characteristics
25 D RAIN TO SOURCE ON RESISTANCE(m) NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 20 VGS = 6V
Figure 8. Saturation Characteristics
2.5 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 2.0
15
1.5
VGS = 10V 10
1.0
VGS = 10V, ID = 75A 5 0 20 40 ID, DRAIN CURRENT (A) 60 80 0.5 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC ) 200
Figure 9. Drain to Source On Resistance vs Drain Current
Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature
©2002 Fairchild Semiconductor Corporation
FDB 1 0A N0 6A 0 / FDP10AN06A0 Rev. A
FDB10AN06A0 / FDP10AN06A0
Typical Characteristics TC = 25°C unless otherwise noted
1.2 VGS = VDS, I D = 250µA NORMALIZED DRAIN TO SOURCE BREA KDOWN VOLTAGE 1.2 ID = 250µA
NORMALIZED GATE THRESHOLD VOLTAGE
1.0
1.1
0.8
1.0
0.6
0.4 -80
- 40
0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC)
200
0.9 -80
- 40
0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC)
200
Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature
3000 CISS = CGS + CGD C, CAPACITANCE (pF) 1000 COSS CDS + CGD
Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature
10 VGS , GATE TO SOURCE VOLTAGE (V) VDD = 30V 8
6
CRSS = CGD
4 WAVEFORMS IN DESCENDING ORDER: ID = 75A ID = 12A 0 5 10 15 20 Qg, GATE CHARGE (nC) 25 30
100 VGS = 0V, f = 1MHz
2
50 0.1
0 1 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 60
Figure 13. Capacitance vs Drain to Source Voltage
Figure 14. Gate Charge Waveforms for Constant Gate Currents
©2002 Fairchild Semiconductor Corporation
FDB 1 0A N0 6A 0 / FDP10AN06A0 Rev. A
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