|
Details, datasheet, quote on part number:FDP120AN15A0
| |
Datasheet text preview:
FDP120AN15A0 / FDD120AN15A0
September 2002
FDP120AN15A0 / FDD120AN15A0
N-Channel PowerTrench® MOSFET 150V, 14A, 120m
Features
· r D S(ON) = 101m (Typ.), VGS = 10V, ID = 4A · Qg(tot) = 11.2nC (Typ.), V GS = 10V · Low Miller Charge · Low Qrr Body Diode · UIS Capability (Single Pulse and Repetitive Pulse) · Qualified to AEC Q101
Formerly developmental type 82845
Applications
· DC/DC Converters and Off-line UPS · Distr ibuted Power Architectures and VRMs · Pr imar y Switch for 24V and 48V Systems · High Voltage Synchronous Rectifier · Direct Injection / Diesel Injection Systems · 42V Automotive Load Control · Electronic Valve Train Systems
DRAIN (FLANGE) DRAIN (FLANGE) SOURCE DRAIN GATE TO-220AB FD P SERIES S O URCE GATE
D
G S
TO-252 AA FDD SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VD SS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC , VGS = 10V) with R JA = 52oC/W Pulsed E AS PD TJ, TST G Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 14 9.7 2.8 Figure 4 122 65 0.43 -55 to 175 A A A A mJ W W/oC
o
Ratings 150 ±20
Units V V
C
Thermal Characteristics
R JC R JA R JA R JA Thermal Resistance Junction to Case TO-252, TO-220 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-220 (Note 2) Thermal Resistance Junction to Ambient TO-252, 1in copper pad area
2
2.31 100 62 52
o o o o
C/W C/W C/W C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2002 Fairchild Semiconductor Corporation FDP120AN15A0 / FDD120AN15A0 Rev. B
FDP120AN15A0 / FDD120AN15A0
Package Marking and Ordering Information
Device Marking FDD 120AN15A 0 FDP 120AN15A0 Device FDD120A N15A0 FDP120AN15A0 Package TO-252AA TO-220AB Reel Size 330mm Tube Tape Width 16mm N/A Quantity 2500 units 50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS ID SS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V V D S = 120V VGS = 0V VGS = ±20V TC = 150oC 150 1 250 ±100 V µA nA
On Characteristics
VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ID = 4A, VGS = 10V rD S ( O N ) Drain to Source On Resistance ID = 2A, VGS = 6V ID = 4A, VGS = 10V, TJ = 175oC 2 0.101 0.113 0.235 4 0.120 0.170 0.282 V
Dynamic Characteristics
CISS CO S S CR S S Qg(TOT) Q g ( TH ) Qg s Qgs2 Qg d Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge V D S = 25V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 2V VD D = 75V ID = 4A Ig = 1.0mA 770 85 17 11.2 1.4 3.5 2.1 2.6 14.5 1.8 pF pF pF nC nC nC nC nC
Switching Characteristics (VGS = 10V)
tON t d ( O N) tr t d ( O FF) tf t O FF Tur n- On Time Tur n- On Delay Time Rise Time Tur n- Off Delay Time Fall Time Tur n- Off Time V D D = 75V, ID = 4A VGS = 10V, RGS = 24 6 16 30 19 33 74 ns ns ns ns ns ns
Drain-Source Diode Characteristics
V SD t rr Q RR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 4A ISD = 2A ISD = 4A, dISD/dt = 100A/µs ISD = 4A, dISD/dt = 100A/µs 1.25 1.0 61 109 V V ns nC
Notes: 1: Starting TJ = 25°C, L = 27mH, IAS = 3A. 2: Pulse width = 100s.
©2002 Fairchild Semiconductor Corporation
F DP 1 20 A N 15 A 0 / FDD120AN15A0 Rev. B
FDP120AN15A0 / FDD120AN15A0
Typical Characteristics TC = 25°C unless otherwise noted
1.2 15
POWER DISSIPATION MULTIPLIER
1.0 ID, DRAIN CURRENT (A) 0 25 50 75 100 125 150 175 12
0.8
9
0.6
6
0.4
0.2
3
0 TC , CASE TEMPERATURE (oC)
0 25 50 75 100 125 (oC) 150 175
TC, CASE TEMPERATURE
Figure 1. Normalized Power Dissipation vs Ambient Temperature
2 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
Figure 2. Maximum Continuous Drain Current vs Case Temperature
ZJC, NORMALIZED THER MAL IMPEDANCE
PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-3 10-2 t , RECTANGULAR PULSE DURATION (s) 10-1 100 101
SINGLE PULSE 0.01 10- 5 10- 4
Figure 3. Normalized Maximum Transient Thermal Impedance
200 TRANSCONDUCTAN CE MAY LIMIT CURRENT IN THIS REGION
TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 VGS = 10V 175 - TC 150
IDM, PEAK CURRENT (A)
100
10 10-5 10- 4 10- 3 10-2 t , PULSE WIDTH (s) 10 -1 100 101
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation
F DP 1 20 A N 15 A 0 / FDD120AN15A0 Rev. B
FDP120AN15A0 / FDD120AN15A0
Typical Characteristics TC = 25°C unless otherwise noted
100 10µs IAS, AVALANCHE CURRENT (A) 50 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
ID, DRAIN CURRENT (A)
100µs 10
10 STARTIN G TJ = 25oC
1ms 1 OPERATION IN THIS A REA MAY BE LIMITED BY rDS(ON) 10ms SINGLE PULSE TJ = MAX RATED TC = 25o C 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 200 DC
STARTING TJ = 150oC
1 0.01
0.1 tAV, TIME IN AVALANCHE (ms)
1
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching Capability
30
30 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDD = 15V ID, DRAIN CURRENT (A)
25 ID , DRAIN CURRENT (A)
25
PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX TC = 25oC
VGS = 10V VGS = 7V
20
20 VGS = 6V 15
15
10 TJ = 25oC 5 TJ = 175 oC 0 3 4 5 6 VGS , GATE TO SOURCE VOLTAGE (V) 7 TJ = -55o C
10
5 VGS = 5V 0 0 1 2 3 4 VDS , DRAIN TO SOURCE VOLTAGE (V) 5
Figure 7. Transfer Characteristics
140 D RAIN TO SOURCE ON RESISTANCE(m) NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80µs D UTY CYCLE = 0.5% MAX 130 VGS = 6V 120
Figure 8. Saturation Characteristics
2.5 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 2.0
1.5
110 VGS = 10V 100
1.0
VGS = 10V, I D = 4A 90 0 3 6 9 ID, DRAIN CURRENT (A) 12 15 0.5 -80 - 40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200
Figure 9. Drain to Source On Resistance vs Drain Current
Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature
©2002 Fairchild Semiconductor Corporation
F DP 1 20 A N 15 A 0 / FDD120AN15A0 Rev. B
FDP120AN15A0 / FDD120AN15A0
Typical Characteristics TC = 25°C unless otherwise noted
1.2 VGS = VDS, ID = 250µA NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.2 ID = 250µA
NORMALIZED GATE THRESHOLD VOLTAGE
1.0
1.1
0.8
1.0
0.6
0.4 -80
-40
0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC)
200
0.9 -80
-40
0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC)
200
Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature
1000
Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature
10 VGS , GATE TO SOURCE VOLTAGE (V)
C ISS = CGS + C GD C, CAPACITANCE (pF) COSS CDS + CGD
VDD = 75V 8
100
6
CRSS = CGD
4 WAVEFORMS IN DESCENDING ORDER: ID = 14A ID = 4A 0 4 8 Qg , GATE CHARGE (nC) 12
2
10 VGS = 0V, f = 1MHz 5 0.1 1 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 150
0
Figure 13. Capacitance vs Drain to Source Voltage
Figure 14. Gate Charge Waveforms for Constant Gate Currents
©2002 Fairchild Semiconductor Corporation
F DP 1 20 A N 15 A 0 / FDD120AN15A0 Rev. B
|
|
