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Details, datasheet, quote on part number:FDP13AN06A0
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Datasheet text preview:
FDB13AN06A0 / FDP13AN06A0
September 2002
FDB13AN06A0 / FDP13AN06A0
N-Channel PowerTrench® MOSFET 60V, 64A, 13m
Features
· r D S(ON) = 11.5m (Typ.), VGS = 10V, ID = 64A · Qg(tot) = 22nC (Typ.), VGS = 10V · Low Miller Charge · Low QRR Body Diode · UIS Capability (Single Pulse and Repetitive Pulse) · Qualified to AEC Q101
Formerly developmental type 82555
Applications
· Motor / Body Load Control · ABS Systems · Power train Management · Injection Systems · DC-DC converters and Off-line UPS · Distr ibuted Power Architectures and VRMs · Pr imar y Switch for 12V and 24V systems
DRAI N (FLANGE)
D
SOURCE DRAIN GATE SOURCE TO-220 AB FDP SERIES TO-26 3AB FDB SERIES DRAIN (FLANGE) GATE
G S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VD SS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 10V) Continuous (TA = 25oC, VGS = 10V, R JA = 43oC/W) Pulsed E AS PD TJ, TST G Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 64 45 11 Figure 4 56 115 0.77 -55 to 175 A A A A mJ W W/oC
o
Ratings 60 ±20
Units V V
C
Thermal Characteristics
R JC R JA R JA Thermal Resistance Junction to Case TO-220,TO-263 Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 1.3 62 43
o o o
C/W C/W C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reli ability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2002 Fairchild Semiconductor Corporation FDB 1 3A N0 6A 0 / FDP13AN06A0 Rev. A
FDB13AN06A0 / FDP13AN06A0
Package Marking and Ordering Information
Device Marking FDB13AN06A0 FDP13AN06A0 Device FDB13AN 06A0 FDP13AN 06A0 Package TO-263AB TO-220AB Reel Size 330mm Tube Tape Width 24mm N/A Quantity 800 units 50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B VDSS ID SS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V V D S = 50V VGS = 0V VGS = ±20V TC = 150oC 60 1 250 ±100 V µA nA
On Characteristics
VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ID = 64A, VGS = 10V rD S ( O N ) Drain to Source On Resistance ID = 32A, VGS = 6V ID = 64A, VGS = 10V, TJ = 175oC 2 0.0115 0.022 0.026 4 0.013 0.033 0.028 V
Dynamic Characteristics
CISS CO S S CR S S Qg(TOT) Q g ( TH ) Qg s Qgs2 Qg d Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge V D S = 25V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 2V VD D = 30V ID = 64A Ig = 1.0mA 1350 260 90 22 2.6 8.5 5.9 6.4 29 3.4 pF pF pF nC nC nC nC nC
Switching Characteristics (VGS = 10V)
tON t d ( O N) tr t d ( O FF) tf t O FF Tur n- On Time Tur n- On Delay Time Rise Time Tur n- Off Delay Time Fall Time Tur n- Off Time V D D = 30V, ID = 64A VGS = 10V, RGS = 12 9 96 24 26 158 74 ns ns ns ns ns ns
Drain-Source Diode Characteristics
V SD t rr Q RR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 64A ISD = 32A ISD = 64A, dISD/dt = 100A/µs ISD = 64A, dISD/dt = 100A/µs 1.25 1.0 25 17 V V ns nC
Notes: 1: Starting TJ = 25°C, L = 45µH, I AS = 50A. 2: Pulse width = 100s.
©2002 Fairchild Semiconductor Corporation
FDB 1 3A N0 6A 0 / FDP13AN06A0 Rev. A
FDB13AN06A0 / FDP13AN06A0
Typical Characteristics TC = 25°C unless otherwise noted
1.2 80
POWER DISSIPATION MULTIPLIER
1.0 ID, DRAIN CURRENT (A) 60
0.8
0.6
40
0.4
20
0.2
0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (o C)
0 25 50 75 100 125 (o C) 150 175
TC, CASE TEMPERATURE
Figure 1. Normalized Power Dissipation vs Ambient Temperature
2 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
Figure 2. Maximum Continuous Drain Current vs Case Temperature
ZJC, NORMALIZED THER MAL IMPEDANCE
PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-3 10-2 t , RECTANGULAR PULSE DURATION (s) 10-1 100 101
SINGLE PULSE 0.01 10- 5 10- 4
Figure 3. Normalized Maximum Transient Thermal Impedance
800 TC = 25oC FOR TEMPERATURES TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION VGS = 10V ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150
IDM, PEAK CURRENT (A)
100
30 10-5 10- 4 10-3 10- 2 t , PULSE WIDTH (s) 10-1 100 101
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation
FDB 1 3A N0 6A 0 / FDP13AN06A0 Rev. A
FDB13AN06A0 / FDP13AN06A0
Typical Characteristics TC = 25°C unless otherwise noted
1000 10µs 100 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 100
If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100µs
STARTING TJ = 25o C
10
OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON)
1m s
10 STARTING TJ = 150oC
1
SINGLE PULSE TJ = MAX RATED TC = 25oC 1
DC
10ms
0.1
1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 0.01 0.1 1 10 tAV, TIME IN AVALANCHE (ms) 100
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching Capability
100
100 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDD = 15V ID, DRAIN CURRENT (A)
TC = 25oC 80
VGS = 20V
ID , DRAIN CURRENT (A)
80
VGS = 10V
60 TJ = 175 oC TJ = 25oC 20 TJ = -55oC
60 VGS = 6V 40 PULSE DURATION = 80µs D UTY CYCLE = 0.5% MAX VGS = 5V
40
20
0 3 4 5 6 7 VGS , GATE TO SOURCE VOLTAGE (V)
0 0 0.5 1.0 1 .5 2.0 VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
30 DRAIN TO SOURCE ON RESISTANCE(m) NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 25 VGS = 6V 20 2.5
Figure 8. Saturation Characteristics
PU LSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 2.0
1.5
15 VGS = 10V 10 0 10 20 30 40 50 60 70
1.0
VGS = 10V, ID =64A 0.5 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC ) 200
ID, DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain Current
Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature
©2002 Fairchild Semiconductor Corporation
FDB 1 3A N0 6A 0 / FDP13AN06A0 Rev. A
FDB13AN06A0 / FDP13AN06A0
Typical Characteristics TC = 25°C unless otherwise noted
1.4 VGS = VDS, I D = 250µA 1.2 NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE B REAKDOWN VOLTAGE 1.2 ID = 250µA
1.1
1.0
0.8
1.0
0.6
0.4 - 80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)
0.9 -80 -40 0 40 80 120 160 200 TJ , JUNCTION TEMPERATURE (o C)
Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature
3000
Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature
10 VGS , GATE TO SOURCE VOLTAGE (V) VDD = 30V 8
C, CAPACITANCE (pF)
1000 COSS C DS + C GD
CISS = CGS + C GD
6
CRSS = CGD
4 WAVEFORMS IN DESCEN DING ORDER: ID = 64A ID = 32A 0 5 10 15 Qg , GATE CHARGE (nC) 20 25
100 VGS = 0V, f = 1MHz 40 0.1 1 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 60
2
0
Figure 13. Capacitance vs Drain to Source Voltage
Figure 14. Gate Charge Waveforms for Constant Gate Current
©2002 Fairchild Semiconductor Corporation
FDB 1 3A N0 6A 0 / FDP13AN06A0 Rev. A
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