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Details, datasheet, quote on part number:FDP14AN06LA0
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Datasheet text preview:
FDB14AN06LA0 / FDP14AN06LA0
October 2002
FDB14AN06LA0 / FDP14AN06LA0
N-Channel PowerTrench® MOSFET 60V, 61A, 14m
Features
· r D S(ON) = 12.4m (Typ.), VGS = 5V, ID = 61A · Qg(tot) = 24nC (Typ.), VGS = 5V · Low Miller Charge · Low QRR Body Diode · UIS Capability (Single Pulse and Repetitive Pulse) · Qualified to AEC Q101
Formerly developmental type 83557
Applications
· Motor / Body Load Control · ABS Systems · Power train Management · Injection Systems · DC-DC converters and Off-line UPS · Distr ibuted Power Architectures and VRMs · Pr imar y Switch for 12V and 24V systems
DRAIN (FLANGE)
D
SOURCE DRAIN GATE SOURCE TO-2 20AB FDP SERIES TO-263AB FDB SERIES DRAIN (FLANGE) GATE
G S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VD SS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 25oC, VGS = 5V) Continuous (TA = 25oC, VGS = 5V, R JA = 43oC/W) Pulsed E AS PD TJ, TST G Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 69 61 10 Figure 4 441 125 0.83 -55 to 175 A A A A mJ W W/oC
o
Ratings 60 ±20
Units V V
C
Thermal Characteristics
R JC R JA R JA Thermal Resistance Junction to Case TO-220,TO-263 Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 1.2 62 43
o o o
C/W C/W C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2002 Fairchild Semiconductor Corporation FDB14AN06LA0 / FDP14AN06LA0 Rev. A
FDB14AN06LA0 / FDP14AN06LA0
Package Marking and Ordering Information
Device Marking FDB 14AN06LA0 FDP 14AN06LA0 Device FDB14AN06LA0 FDP14AN06LA0 Package TO-263AB TO-220AB Reel Size 330mm Tube Tape Width 24mm N/A Quantity 800 units 50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS ID SS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V V D S = 50V VGS = 0V VGS = ±20V TC = 150oC 60 1 250 ±100 V µA nA
On Characteristics
VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ID = 69A, VGS = 10V rD S ( O N ) Drain to Source On Resistance ID = 61A, VGS = 5V ID = 61A, VGS = 5V, TJ = 175oC 1 0.0096 0.0124 0.029 3 0.011 0.014 0.033 V
Dynamic Characteristics
CISS CO S S CR S S Qg(TOT) Q g ( TH ) Qg s Qgs2 Qg d Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge V D S = 25V, VGS = 0V, f = 1MHz VGS = 0V to 5V VGS = 0V to 1V VD D = 30V ID = 61A Ig = 1.0mA 2900 270 115 24 3.0 12 9.1 7.9 31 3.9 pF pF pF nC nC nC nC nC
Switching Characteristics (VGS = 5V)
tON t d ( O N) tr t d ( O FF) tf t O FF Tur n- On Time Tur n- On Delay Time Rise Time Tur n- Off Delay Time Fall Time Tur n- Off Time V D D = 30V, ID = 61A VGS = 5V, RGS = 5.1 15 169 24 50 276 109 ns ns ns ns ns ns
Drain-Source Diode Characteristics
V SD t rr Q RR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 61A ISD = 32A ISD = 61A, dISD/dt = 100A/µs ISD = 61A, dISD/dt = 100A/µs 1.25 1.0 33 29 V V ns nC
Notes: 1: Starting TJ = 25°C, L = 8.81mH, IAS = 10A. 2: Pulse width = 100s.
©2002 Fairchild Semiconductor Corporation
FDB 1 4A N0 6L A 0 / FDP14AN06LA0 Rev. A
FDB14AN06LA0 / FDP14AN06LA0
Typical Characteristics TC = 25°C unless otherwise noted
1.2 80
POWER DISSIPATION MULTIPLIER
1.0 ID, DRAIN CURRENT (A) 60
VGS = 10V
0.8
VGS = 5V 40
0.6
0.4
20
0.2
0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC)
0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs Ambient Temperature
2 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
Figure 2. Maximum Continuous Drain Current vs Case Temperature
ZJC, NORMALIZED THER MAL IMPEDANCE
PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-3 10-2 t , RECTANGULAR PULSE DURATION (s) 10-1 100 101
SINGLE PULSE 0.01 10- 5 10- 4
Figure 3. Normalized Maximum Transient Thermal Impedance
1000 TRA NSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION IDM, PEAK CURRENT (A)
TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150
VGS = 10V
VGS = 5V 100
50 10-5 10- 4 10- 3 10-2 t , PULSE WIDTH (s) 10 -1 100 101
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation
FDB 1 4A N0 6L A 0 / FDP14AN06LA0 Rev. A
FDB14AN06LA0 / FDP14AN06LA0
Typical Characteristics TC = 25°C unless otherwise noted
1000 10µs ID, DRAIN CURRENT (A) 100 100µs IAS, AVALANCHE CURRENT (A) 100 500 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
10
1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) DC SINGLE PULSE TJ = MAX RATED TC = 25o C 10ms
10 STARTING TJ = 150oC
1
0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100
1 0.001 0.01 0.1 1 tAV, TIME IN AVALANCHE (ms) 10
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching Capability
150
150 PU LSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDD = 15V ID, DRAIN CURRENT (A)
PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 125 TC = 25oC VGS = 10V
125 ID , DRAIN CURRENT (A)
VGS = 5V
100
100
75
TJ = 25oC
75
VGS = 4V
50 TJ = 175oC 25 TJ = -55oC 0 2.0
50
25 VGS = 3V 0 2 .5 3.0 3 .5 4.0 4 .5 5.0 0 0 .5 1.0 1 .5 2.0 2.5 VGS , GATE TO SOURCE VOLTAGE (V) VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
13 DRAIN TO SOURCE ON RESISTANCE(m) NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 12 VGS = 5V 11
Figure 8. Saturation Characteristics
2.5 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 2.0
1.5
10 VGS = 10V
1.0
VGS = 5V, ID = 61A 9 0 20 40 ID, DRAIN CURRENT (A) 60 80 0.5 -80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 9. Drain to Source On Resistance vs Drain Current
Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature
©2002 Fairchild Semiconductor Corporation
FDB 1 4A N0 6L A 0 / FDP14AN06LA0 Rev. A
FDB14AN06LA0 / FDP14AN06LA0
Typical Characteristics TC = 25°C unless otherwise noted
1.4 VGS = VDS, ID = 250µA 1.2 NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.2 ID = 250µA
1.0
1.1
0.8
0.6
1.0
0.4
0.2 -80 - 40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (o C) 200
0.9 - 80 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) 200
Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature
5000 CISS = CGS + CGD C, CAPACITANCE (pF)
Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature
10 VDD = 30V VGS , GATE TO SOURCE VOLTAGE (V) 8
1000 CRSS = CGD
COSS C DS + C GD
6
4
2
100 VGS = 0V, f = 1MHz 50 0.1 1 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 60
WAVEFORMS IN D ESCENDING ORDER: ID = 61A ID = 10A 0 10 20 30 Qg, GATE CHARGE (nC) 40 50
0
Figure 13. Capacitance vs Drain to Source Voltage
Figure 14. Gate Charge Waveforms for Constant Gate Currents
©2002 Fairchild Semiconductor Corporation
FDB 1 4A N0 6L A 0 / FDP14AN06LA0 Rev. A
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