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Details, datasheet, quote on part number:FDP16AN08A0
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Datasheet text preview:
FDP16AN08A0 / FDB16AN08A0
July 2002
FDP16AN08A0 / FDB16AN08A0
N-Channel PowerTrench® MOSFET 75V, 58A, 16m
Features
· r D S(ON) = 13m (Typ.), VGS = 10V, ID = 58A · Qg(tot) = 28nC (Typ.), VGS = 10V · Low Miller Charge · Low Qrr Body Diode · UIS Capability (Single Pulse and Repetitive Pulse) · Qualified to AEC Q101
Formerly developmental type 82660
Applications
· 42V Automotive Load Control · Star ter / Alternator Systems · Electronic Power Steering Systems · Electronic Valve Train Systems · DC-DC converters and Off-line UPS · Distr ibuted Power Architectures and VRMs · Pr imar y Switch for 24V and 48V systems
DRAI N (FLANGE)
D
SOURCE DRAIN GATE SOURCE GATE
G
TO-26 3AB FDB SERIES DRA IN (FLANGE)
TO-220AB
FDP SERIES
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VD SS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC , VGS = 10V, with R JA = 43oC/W) Pulsed E AS PD TJ, TST G Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 58 44 9 Figure 4 117 135 0.9 -55 to 175 A A mJ W W/oC
o
Ratings 75 ±20
Units V V A
C
Thermal Characteristics
R JC R JA R JA Thermal Resistance Junction to Case TO-220,TO-263 Thermal Resistance Junction to Ambient TO-220,TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 1.11 62 43
o o o
C/W C/W C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2002 Fairchild Semiconductor Corporation F DP 16 A N08 A 0 / FDB16AN08A0 Rev. A1
FDP16AN08A0 / FDB16AN08A0
Package Marking and Ordering Information
Device Marking FDB16AN08A0 FDP16AN08A0 Device FDB16AN 08A0 FDP16AN 08A0 Package TO-263AB TO-220AB Reel Size 330mm Tube Tape Width 24mm N/A Quantity 800 units 50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B VDSS ID SS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VD S = 60V VGS = 0V VGS = ±20V TC = 150oC 75 1 250 ±100 V µA nA
On Characteristics
VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ID = 58A, VGS = 10V rD S ( O N ) Drain to Source On Resistance ID = 29A, VGS = 6V ID = 58A, VGS = 10V, TJ = 175oC 2 0.013 0.019 0.032 4 0.016 0.029 0.037 V
Dynamic Characteristics
CISS CO S S CR S S Qg(TOT) Q g ( TH ) Qg s Qgs2 Qg d Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge VD S = 25V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 2V VD D = 40V ID = 58A Ig = 1.0mA 1857 288 88 28 3.5 11 7.6 6.4 42 5 pF pF pF nC nC nC nC nC
Switching Characteristics (VGS = 10V)
tON t d ( O N) tr t d ( O FF) tf t O FF Tur n- On Time Tur n- On Delay Time Rise Time Tur n- Off Delay Time Fall Time Tur n- Off Time VD D = 40V, ID = 58A VGS = 10V, RGS = 10 8 82 28 30 135 86 ns ns ns ns ns ns
Drain-Source Diode Characteristics
V SD t rr Q RR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 58A ISD = 29A ISD = 58A, dISD/dt = 100A/µs ISD = 58A, dISD/dt = 100A/µs 1.25 1.0 35 36 V V ns nC
Notes: 1: Starting TJ = 25°C, L = 260µH, IAS = 30A.
©2002 Fairchild Semiconductor Corporation
F DP 16 A N08 A 0 / FDB16AN08A0 Rev. A1
FDP16AN08A0 / FDB16AN08A0
Typical Characteristics TC = 25°C unless otherwise noted
1.2 60
POWER DISSIPATION MULTIPLIER
1.0 ID, DRAIN CURRENT (A)
0.8
40
0.6
0.4
20
0.2
0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (o C)
0 25 50 75 100 125
o
150
175
TC, CASE TEMPERATURE ( C)
Figure 1. Normalized Power Dissipation vs Ambient Temperature
2 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
Figure 2. Maximum Continuous Drain Current vs Case Temperature
ZJC, NORMALIZED THER MAL IMPEDANCE
PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-3 10-2 t , RECTANGULAR PULSE DURATION (s) 10-1 100 101
SINGLE PULSE 0.01 10- 5 10- 4
Figure 3. Normalized Maximum Transient Thermal Impedance
700
TC = 25oC FOR TEMPERATURES A BOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150
IDM, PEAK CURRENT (A)
TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION VGS = 10V
100
50 10-5 10- 4 10-3 10- 2 t , PULSE WIDTH (s) 10-1 100 101
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation
F DP 16 A N08 A 0 / FDB16AN08A0 Rev. A1
FDP16AN08A0 / FDB16AN08A0
Typical Characteristics TC = 25°C unless otherwise noted
500 10µs IAS, AVALANCHE CURRENT (A) 100 ID, DRAIN CURRENT (A) 100µs 100
If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON)
1ms 10ms
STARTING TJ = 25oC 10
1 SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 1
DC
STARTIN G TJ = 150oC
1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 0.01 0.1 1 10 tAV, TIME IN AVALANCHE (ms) 100
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fa irchild Application Not es AN7514 and AN7515
Figure 6. Unclamped Inductive Switching Capability
100
100 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDD = 15V ID , DRAIN CURRENT (A) 75 ID, DRAIN CURRENT (A)
VGS = 20V
VGS = 10V VGS = 7V
75
VGS = 6V 50
50 TJ = 175oC TJ = 25oC 25 TJ = -55oC
25
VGS = 5V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX
TC = 25o C 3 4
0 3.0 3 .5 4.0 4 .5 5.0 5 .5 6.0 VGS , GATE TO SOURCE VOLTAGE (V) 6 .5
0 0 1 2 VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
0.022 DRAIN TO SOURCE ON RESISTANCE(m) NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2.5
Figure 8. Saturation Characteristics
PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX
0.020
VGS = 6V
2.0
0.018
1.5
0.016
0.014 VGS = 10V 0.012 0 10 20 30 40 50 60
1.0
VGS = 10V, ID =58A 0.5 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC ) 200
ID, DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain Current
Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature
©2002 Fairchild Semiconductor Corporation
F DP 16 A N08 A 0 / FDB16AN08A0 Rev. A1
FDP16AN08A0 / FDB16AN08A0
Typical Characteristics TC = 25°C unless otherwise noted
1.4 VGS = VDS, I D = 250µA 1.2 NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE B REAKDOWN VOLTAGE 1.2 ID = 250µA
1.1
1.0
0.8
1.0
0.6
0.4 - 80
-40
0
40
80
120
160
200
0.9 -80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ , JUNCTION TEMPERATURE (o C)
Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature
3000
Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature
10 VGS , GATE TO SOURCE VOLTAGE (V) VDD = 40V 8
CISS = CGS + CGD C, CAPACITANCE (pF) 1000 COSS C DS + C GD
6
CRSS = CGD
4 WAVEFORMS IN DESCEN DING ORDER: ID = 58A ID = 28A 0 5 10 15 20 Qg , GATE CHARGE (nC) 25 30
100 VGS = 0V, f = 1MHz 50 0.1 1 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 75
2
0
Figure 13. Capacitance vs Drain to Source Voltage
Figure 14. Gate Charge Waveforms for Constant Gate Current
©2002 Fairchild Semiconductor Corporation
F DP 16 A N08 A 0 / FDB16AN08A0 Rev. A1
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