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Details, datasheet, quote on part number:FDP24AN06LA0
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Datasheet text preview:
FDB24AN06LA0 / FDP24AN06LA0
January 2004
FDB24AN06LA0 / FDP24AN06LA0
N-Channel PowerTrench® MOSFET 60V, 36A, 24m
Features
· r D S(ON) = 20m (Typ.), VGS = 5V, ID = 36A · Qg(tot) = 16nC (Typ.), VGS = 5V · Low Miller Charge · Low QRR Body Diode · UIS Capability (Single Pulse and Repetitive Pulse) · Qualified to AEC Q101
Formerly developmental type 83547
Applications
· Motor / Body Load Control · ABS Systems · Power train Management · Injection Systems · DC-DC converters and Off-line UPS · Distr ibuted Power Architectures and VRMs · Pr imar y Switch for 12V and 24V systems
DRAIN (FLANGE) GATE
DRA IN (FLANGE)
SOURCE DRAIN
D
S O URCE
GATE
G S
TO-263AB
FDB SERIES
TO-220AB
FDP SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VD SS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 25oC, VGS = 5V) Continuous (TC = 100oC, VGS = 5V) Continuous (TA = 25oC, VGS = 5V, R JA = 43oC/W) Pulsed E AS PD TJ, TST G Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 40 36 25 7.8 Figure 4 36 75 0.5 -55 to 175 A A A A A mJ W W/oC
o
Ratings 60 ±20
Units V V
C
Thermal Characteristics
R JC R JA R JA Thermal Resistance Junction to Case TO-220, TO-263 Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 2.0 62 43
o o o
C/W C/W C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reli ability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2004 Fairchild Semiconductor Corporation FDB 2 4A N0 6L A 0 / FDP24AN06LA0 Rev. A
FDB24AN06LA0 / FDP24AN06LA0
Package Marking and Ordering Information
Device Marking FDB 24AN06LA0 FDP 24AN06LA0 Device FDB24AN06LA0 FDP24AN06LA0 Package TO-263AB TO-220AB Reel Size 330mm Tube Tape Width 24mm N/A Quantity 800 units 50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS ID SS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V V D S = 50V VGS = 0V VGS = ±20V TC = 150oC 60 1 250 ±100 V µA nA
On Characteristics
VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ID = 40A, VGS = 10V rD S ( O N ) Drain to Source On Resistance ID = 36A, VGS = 5V ID = 36A, VGS = 5V, TJ = 175oC 1 0.016 0.020 0.047 3 0.019 0.024 0.056 V
Dynamic Characteristics
CISS CO S S CR S S Qg(TOT) Q g ( TH ) Qg s Qgs2 Qg d Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge V D S = 25V, VGS = 0V, f = 1MHz VGS = 0V to 5V VGS = 0V to 1V VD D = 30V ID = 36A Ig = 1.0mA 1850 180 75 16 1.8 6.3 4.5 5.0 21 2.4 pF pF pF nC nC nC nC nC
Switching Characteristics (VGS = 5V)
tON t d ( O N) tr t d ( O FF) tf t O FF Tur n- On Time Tur n- On Delay Time Rise Time Tur n- Off Delay Time Fall Time Tur n- Off Time V D D = 30V, ID = 36A VGS = 5V, RGS = 9.1 11 101 28 49 168 116 ns ns ns ns ns ns
Drain-Source Diode Characteristics
V SD t rr Q RR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 36A ISD = 18A ISD = 36A, dISD/dt = 100A/µs ISD = 36A, dISD/dt = 100A/µs 1.25 1.0 34 30 V V ns nC
Notes: 1: Starting TJ = 25°C, L = 90µH, I AS = 28A. 2: Pulse Width = 100s
©2004 Fairchild Semiconductor Corporation
FDB 2 4A N0 6L A 0 / FDP24AN06LA0 Rev. A
FDB24AN06LA0 / FDP24AN06LA0
Typical Characteristics TC = 25°C unless otherwise noted
1.2 50
POWER DISSIPATION MULTIPLIER
1.0 ID, DRAIN CURRENT (A)
40 VGS = 10V 30 VGS = 5V
0.8
0.6
20
0.4
0.2
10
0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC)
0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs Ambient Temperature
2 1 THERMAL IMPEDANCE DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
Figure 2. Maximum Continuous Drain Current vs Case Temperature
ZJC, NORMALIZED
PDM 0.1 t1 t2 SIN GLE PULSE 0.01 10- 5 10 -4 10-3 10-2 t , RECTANGULAR PULSE DURATION (s) NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10- 1 100 101
Figure 3. Normalized Maximum Transient Thermal Impedance
400 TRANSCOND UCTANCE MAY LIMIT CURRENT IN THIS REGION VGS = 10V TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150 100 VGS = 5V
IDM, PEAK CURRENT (A)
30 10 -5 10-4 10-3 10-2 t , PULSE WIDTH (s) 10-1 100 101
Figure 4. Peak Current Capability
©2004 Fairchild Semiconductor Corporation
FDB 2 4A N0 6L A 0 / FDP24AN06LA0 Rev. A
FDB24AN06LA0 / FDP24AN06LA0
Typical Characteristics TC = 25°C unless otherwise noted
1000 IAS, AVALANCHE CURRENT (A) 10µs ID, DRAIN CURRENT (A) 100 100µs 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 SINGLE PULSE TJ = MAX RATED TC = 25o C 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 DC 10ms 100
STARTING TJ = 25o C 10 STARTING TJ = 150oC If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 1 0.001 0 .01 0 .1 1 10 100
10
tAV, TIME IN AVALANCHE (ms)
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching Capability
60
60 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDD = 15V
VGS = 10V ID, DRAIN CURRENT (A) 45
VGS = 5V VGS = 3.5V
ID , DRAIN CURRENT (A)
45
30 TJ = 175oC 15 TJ = 25 oC TJ = -55o C 0 1 2 3 4 VGS , GATE TO SOURCE VOLTAGE (V)
30 VGS = 3V
15
PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX TC = 25oC
0 0 0 .5 1.0 1 .5 2.0 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
50 NORMALIZED DRAIN TO SOURCE ON RESISTANCE PU LSE DURATION = 80µs DUTY CYCLE = 0.5% MAX rDS(ON), DRAIN TO SOURCE ON RESISTANCE (m) 40 ID = 40A 30
Figure 8. Saturation Characteristics
2.5 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 2.0
1.5
1.0
20 ID = 5A
0.5 VGS = 10V, ID = 40A
10 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
0 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (o C)
Figure 9. Drain to Source On Resistance vs Gate Voltage and Drain Current
Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature
©2004 Fairchild Semiconductor Corporation
FDB 2 4A N0 6L A 0 / FDP24AN06LA0 Rev. A
FDB24AN06LA0 / FDP24AN06LA0
Typical Characteristics TC = 25°C unless otherwise noted
1.25 VGS = VDS, ID = 250µA NORMALIZED GATE THRESHOLD VOLTAGE 1.00 NORMALIZED DRAIN TO SOURCE BREAK DOWN VOLTAGE 1.15 ID = 250µA 1.10
1.05
0.75
1.00
0.50
0.95
0.25 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)
0.90 -80 -40 0 40 80 120 160 200 TJ , JUNCTION TEMPERATURE (oC )
Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature
2500 CISS = CGS + C GD 1000 C, CAPACITANCE (pF) COSS CDS + C GD
Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature
10 VGS , GATE TO SOURCE VOLTAGE (V) VDD = 30V 8
6
CRSS = CGD
4
100 VGS = 0V, f = 1MHz 40 0.1 1 10 60 VDS , DRAIN TO SOURCE VOLTAGE (V)
2
WAVEFORMS IN DESCENDING ORDER: ID = 36A ID = 5A 0 5 10 15 20 Qg, GATE CHARGE (nC) 25 30
0
Figure 13. Capacitance vs Drain to Source Voltage
Figure 14. Gate Charge Waveforms for Constant Gate Current
©2004 Fairchild Semiconductor Corporation
FDB 2 4A N0 6L A 0 / FDP24AN06LA0 Rev. A
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