|
Details, datasheet, quote on part number:FDP2532
| |
| Part: | FDP2532 |
| Description: | FDP2532 - Discrete Commercial N-channel UltraFET Trench MOSFET, 150V, 79A, 0.016 Ohms @ VGS = 10 V, TO220 Package |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FDP2532 datasheet File size : 282 kB |
| Request For quote: | Find where to buy FDP2532
|
| |
Datasheet text preview:
FDB2532 / FDP2532 / FDI2532
August 2002
FDB2532 / FDP2532 / FDI2532
N-Channel PowerTrench® MOSFET 150V, 79A, 16m
Features
· r D S(ON) = 14m (Typ.), VGS = 10V, ID = 33A · Qg(tot) = 82nC (Typ.), VGS = 10V · Low Miller Charge · Low QRR Body Diode · UIS Capability (Single Pulse and Repetitive Pulse) · Qualified to AEC Q101
Formerly developmental type 82884
Applications
· DC/DC converters and Off-Line UPS · Distributed Power Architectures and VRMs · Primary Switch for 24V and 48V Systems · High Voltage Synchronous Rectifier · Direct Injection / Diesel Injection Systems · 42V Automotive Load Control · Electronic Valve Train Systems
D
DRAIN (FLANGE)
SOURCE DRAIN GATE S O URCE GATE
DRAIN (FLANGE)
SOURCE DRAIN GATE
G
TO-220AB
FDP SERIES
TO-263AB
FDB SERIES
DRAIN (FLANGE)
TO-262AB
FDI SERIES
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VD SS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC , VGS = 10V, R JA = 43oC/W) Pulsed E AS PD TJ, TST G Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 79 56 8 Figure 4 400 310 2.07 -55 to 175 A A A A mJ W W/oC
oC
Ratings 150 ±20
Units V V
Thermal Characteristics
R JC R JA R JA Thermal Resistance Junction to Case TO-220, TO-263, TO-262 Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in copper pad area
2
0.48 62 43
o o o
C/W C/W C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reli ability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2002 Fairchild Semiconductor Corporation
F DB 25 32 / FDP2532 / FDI2532 Rev. B
FDB2532 / FDP2532 / FDI2532
Package Marking and Ordering Information
Device Marking FDB2532 FDP2532 FDI2532 Device FD B2532 FD P2532 FDI2532 Package TO-263AB TO-220AB TO-262AB Reel Size 330mm Tube Tube Tape Width 24mm N/A N/A Quantity 800 units 50 units 50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Unit s
Off Characteristics
BVDSS ID SS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VD S = 120V VGS = 0V VGS = ±20V TC = 150oC 150 1 250 ±100 V µA nA
On Characteristics
VGS(TH) Gate to Source Threshold Voltage V GS = VDS, ID = 250µA ID = 33A, VGS = 10V rD S ( O N ) Drain to Source On Resistance ID = 16A, VGS = 6V, ID = 33A, VGS = 10V, TC = 175oC 2 0.014 0.016 0.040 4 0.016 0.024 0.048 V
Dynamic Characteristics
CISS CO S S CR S S Qg(TOT) Q g ( TH ) Qg s Qgs2 Qg d Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge VD S = 25V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 2V VD D = 75V ID = 33A Ig = 1.0mA 5870 615 135 82 11 23 13 19 107 14 pF pF pF nC nC nC nC nC
Resistive Switching Characteristics (VGS = 10V)
tON t d ( O N) tr t d ( O FF) tf t O FF Tur n-On Time Tur n-On Delay Time Rise Time Tur n-Off Delay Time Fall Time Tur n-Off Time VD D = 75V, ID = 33A VGS = 10V, RGS = 3.6 16 30 39 17 69 84 ns ns ns ns ns ns
Drain-Source Diode Characteristics
V SD t rr Q RR S ource to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge ISD = 33A ISD = 16A ISD = 33A, dISD/dt= 100A/µs ISD = 33A, dISD/dt= 100A/µs 1.25 1.0 105 327 V V ns nC
Notes: 1: Starting TJ = 25°C, L = 0.5 mH, IAS = 40A. 2: Pulse Width = 100s
©2002 Fairchild Semiconductor Corporation
F DB 25 32 / FDP2532 / FDI2532 Rev. B
FDB2532 / FDP2532 / FDI2532
Typical Characteristics TA = 25°C unless otherwise noted
1.2 125 VGS = 10V POWER DISSIPATION MULTIPLIER 1.0 100 0.8 ID, DRAIN CURRENT (A) 0 25 50 75 100 125 150 175
75
0.6
0.4
50
0.2
25
0 TC , CASE TEMPERATURE (oC)
0 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 175
Figure 1. Normalized Power Dissipation vs Ambient Temperature
2.0 1.0 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
Figure 2. Maximum Continuous Drain Current vs Case Temperature
ZJC, NORMALIZED TH ERMAL IMPEDANCE
PDM 0.1 t1 t2 SINGLE PULSE 0.01 10 -5 10- 4 10 -3 10- 2 10-1 t , RECTANGULAR PULSE DURATION (s) 100 101 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC
Figure 3. Normalized Maximum Transient Thermal Impedance
2000 TC = 25 oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 VGS = 10V 175 - TC 150
1000 IDM, PEAK CURRENT (A)
TRANSCONDUC TANCE MAY LIMIT CURRENT IN THIS REGION
100
50 10- 5 10- 4 10- 3 10- 2 t , PULSE WIDTH (s) 10- 1 100 101
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation
F DB 25 32 / FDP2532 / FDI2532 Rev. B
FDB2532 / FDP2532 / FDI2532
Typical Characteristics TA = 25°C unless otherwise noted
1000 10µs 100µs IAS, AVALANCHE CURRENT (A) 200 100 ID, DRAIN CURRENT (A) 100 STARTING TJ = 25oC
10
OPERATION IN THIS A REA MAY BE LIMITED BY rDS(ON) DC SINGLE PULSE TJ = MAX RATED TC = 25oC
1m s 10ms
STARTING TJ = 150oC 10
1
If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 1 0.001 0.01 0.1 tAV, TIME IN AVALANCHE (ms) 1
0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 300
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fa irchild Application Not es AN7515 and AN7517
Figure 6. Unclamped Inductive Switching Capability
180
180 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDD = 15V ID, DRAIN CURRENT (A)
VGS = 10V 150
VGS = 7V VGS = 6V
150 ID , DRAIN CURRENT (A)
120 TJ = 175oC 90
120 90 TC = 25oC 60 30 0 VGS = 5V
60
TJ = 25oC
TJ = -55oC
30
PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX
0 3.0 3 .5 4.0 4 .5 5.0 5 .5 6.0 VGS , GATE TO SOURCE VOLTAGE (V) 6.5 0.0 1 .0 2.0 3.0 4.0 5.0 VDS, DRAIN TO SOURCE VOLTAGE (V) 6.0
Figure 7. Transfer Characteristics
18 D RAIN TO SOURCE ON RESISTANCE (m ) N ORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 17 VGS = 6V 16
Figure 8. Saturation Characteristics
3.0 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 2.5
2.0
15 VGS = 10V 14
1.5
1.0 VGS = 10V, ID =33A 0.5
13 0 20 40 60 ID, DRAIN CURRENT (A) 80
-80
- 40
0 40 80 120 TJ, JUNCTION TEMPERATURE (oC)
160
200
Figure 9. Drain to Source On Resistance vs Drain Current
Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature
©2002 Fairchild Semiconductor Corporation
F DB 25 32 / FDP2532 / FDI2532 Rev. B
FDB2532 / FDP2532 / FDI2532
Typical Characteristics TA = 25°C unless otherwise noted
1.4 VGS = VDS, ID = 250µA 1.2 NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.2 ID = 250µA
1.1
1.0
0.8
1.0
0.6
0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200
0.9 - 80 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (o C) 200
Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature
10000
Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature
10 VDD = 75V VGS , GATE TO SOURCE VOLTAGE (V)
CISS = CGS + CGD C, CAPACITANCE (pF) COSS CDS + CGD 1000 CRSS = CGD
8
6
4 WAVEFORMS IN DESCENDING ORDER: ID = 33A ID = 16A 0 20 40 60 80 100
2
100 VGS = 0V, f = 1MHz 50 0.1 1 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 150
0
Qg, GATE CHARGE (nC)
Figure 13. Capacitance vs Drain to Source Voltage
Figure 14. Gate Charge Waveforms for Constant Gate Currents
©2002 Fairchild Semiconductor Corporation
F DB 25 32 / FDP2532 / FDI2532 Rev. B
|
|
