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Details, datasheet, quote on part number:FDP2552T
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| Part: | FDP2552T |
| Description: | FDP2552 - Discrete Commercial N-channel UltraFET Trench MOSFET, 150V, 37A, 0.036 Ohms @ VGS = 10V, TO-220 Package |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FDP2552T datasheet File size : 263 kB |
| Request For quote: | Find where to buy FDP2552T
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Datasheet text preview:
FDB2552 / FDP2552
October 2002
FDB2552 / FDP2552
N-Channel PowerTrench® MOSFET 150V, 37A, 36m
Features
· r D S(ON) = 32m (Typ.), VGS = 10V, ID = 16A · Qg(tot) = 39nC (Typ.), VGS = 10V · Low Miller Charge · Low QRR Body Diode · UIS Capability (Single Pulse and Repetitive Pulse) · Qualified to AEC Q101
Formerly developmental type 82869
Applications
· DC/DC Converters and Off-line UPS · Distr ibuted Power Architectures and VRMs · Pr imar y Switch for 24V and 48V Systems · High Voltage Synchronous Rectifier · Direct Injection / Diesel Injection Systems · 42V Automotive Load Control · Electronic Valve Train Systems
D
DRAIN (FLANGE) SOURCE DRAIN GATE SOURCE GATE
G
TO-220AB
FDP SERIES
TO-263AB
FDB SERIES
DRAIN (FLANGE)
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VD SS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC , VGS = 10V) with R JA = 43oC/W Pulsed E AS PD TJ, TST G Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 37 26 5 Figure 4 390 150 1.0 -55 to 175 A A A A mJ W W/oC
o
Ratings 150 ±20
Units V V
C
Thermal Characteristics
R JC R JA R JA Thermal Resistance Junction to Case TO-220, TO-263 Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 1.0 62 43
o o o
C/W C/W C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2002 Fairchild Semiconductor Corporation FDB2552 / FDP2552 Rev. B
FDB2552 / FDP2552
Package Marking and Ordering Information
Device Marking FDB2552 FDP2552 Device FD B2552 FD P2552 Package TO-263AB TO-220AB Reel Size 330mm Tube Tape Width 24mm N/A Quantity 800 units 50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS ID SS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V V D S = 120V VGS = 0V VGS = ±20V TC = 150oC 150 1 250 ±100 V µA nA
On Characteristics
VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ID = 16A, VGS = 10V rD S ( O N ) Drain to Source On Resistance ID = 8A, VGS = 6V ID = 16A, VGS = 10V, TJ = 175oC 2 0.032 0.036 0.084 4 0.036 0.054 0.097 V
Dynamic Characteristics
CISS CO S S CR S S Qg(TOT) Q g ( TH ) Qg s Qgs2 Qg d Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge V D S = 25V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 2V VD D = 75V ID = 16A Ig = 1.0mA 2800 285 55 39 5.2 13.5 8.4 8.3 51 6.8 pF pF pF nC nC nC nC nC
Switching Characteristics (VGS = 10V)
tON t d ( O N) tr t d ( O FF) tf t O FF Tur n- On Time Tur n- On Delay Time Rise Time Tur n- Off Delay Time Fall Time Tur n- Off Time V D D = 75V, ID = 16A VGS = 10V, RGS = 8.2 12 29 36 29 62 97 ns ns ns ns ns ns
Drain-Source Diode Characteristics
V SD t rr Q RR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 16A ISD = 8A ISD = 16A, dISD/dt = 100A/µs ISD = 16A, dISD/dt = 100A/µs 1.25 1.0 90 242 V V ns nC
Notes: 1: Starting TJ = 25°C, L = 7.8mH, IAS = 10A. 2: Pulse Width = 100s
©2002 Fairchild Semiconductor Corporation
F DB 25 5 2 / FDP2552 Rev. B
FDB2552 / FDP2552
Typical Characteristics TC = 25°C unless otherwise noted
1.2 40
POWER DISSIPATION MULTIPLIER
1.0 ID, DRAIN CURRENT (A) 0 25 50 75 100 125 150 175 30
0.8
0.6
20
0.4
10
0.2
0 TC , CASE TEMPERATURE (oC)
0 25 50 75 100 125 (oC) 150 175
TC, CASE TEMPERATURE
Figure 1. Normalized Power Dissipation vs Ambient Temperature
2 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
Figure 2. Maximum Continuous Drain Current vs Case Temperature
ZJC, NORMALIZED THER MAL IMPEDANCE
PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-3 10-2 t , RECTANGULAR PULSE DURATION (s) 10-1 100 101
SINGLE PULSE 0.01 10- 5 10- 4
Figure 3. Normalized Maximum Transient Thermal Impedance
700 TC = 25oC TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES A BOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 VGS = 10V 100 175 - TC 150
IDM, PEAK CURRENT (A)
30 10-5 10- 4 10-3 10- 2 t , PULSE WIDTH (s) 10-1 100 101
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation
F DB 25 5 2 / FDP2552 Rev. B
FDB2552 / FDP2552
Typical Characteristics TC = 25°C unless otherwise noted
300 10µs 100 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 100µs 100 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10 OPERATION IN THIS A REA MAY BE LIMITED BY rDS(ON) 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 1 10
1ms
STA RTING TJ = 25 oC 10
10m s
DC
STARTING TJ = 150o C 1
100
300
0.01
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.1 1 tAV, TIME IN AVALANCHE (ms)
10
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching Capability
80
80 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDD = 15V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 60
VGS = 10V 60 VGS = 6V 40 VGS = 5V 20 TC = 25oC PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 0 6.0 0 1 2 3 4 VDS , DRAIN TO SOURCE VOLTAGE (V) 5
40 TJ = 20 TJ = 175oC 0 3.0 3 .5 4.0 4 .5 5.0 5 .5 VGS , GATE TO SOURCE VOLTAGE (V) TJ = -55 C
o
25oC
Figure 7. Transfer Characteristics
42 D RAIN TO SOURCE ON RESISTANCE(m) NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 40
Figure 8. Saturation Characteristics
3.0 PULSE DURATION = 80µs DU TY CYCLE = 0.5% MAX 2.5
38
VGS = 6V
2.0
36
1.5
34 VGS = 10V 32
1.0 VGS = 10V, ID = 16A
30 0 10 20 ID, DRAIN CURRENT (A) 30 40
0.5 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200
Figure 9. Drain to Source On Resistance vs Drain Current
Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature
©2002 Fairchild Semiconductor Corporation
F DB 25 5 2 / FDP2552 Rev. B
FDB2552 / FDP2552
Typical Characteristics TC = 25°C unless otherwise noted
1.4 VGS = VDS, ID = 250µA 1.2 NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.2 ID = 250µA
1.1
1.0
1.0
0.8
0.9
0.6
0.4 -80
-40
0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC)
200
0.8 - 80
-40
0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC)
200
Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature
4000 CISS = CGS + CGD C, CAPACITANCE (pF) 1000 C OSS CDS + CGD
Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature
10 VGS , GATE TO SOURCE VOLTAGE (V) VDD = 75V 8
6
CRSS = CGD
4
100
2
VGS = 0V, f = 1MHz 10 0.1 1 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 150 0 0 10 20
WAVEFORMS IN DESCENDING ORDER: ID = 37A ID = 16A 30 40
Qg, GATE CHARGE (nC)
Figure 13. Capacitance vs Drain to Source Voltage
Figure 14. Gate Charge Waveforms for Constant Gate Currents
©2002 Fairchild Semiconductor Corporation
F DB 25 5 2 / FDP2552 Rev. B
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