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Details, datasheet, quote on part number:FDP2570
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FDP2570/FDB2570
August 2001
FDP2570/FDB2570
150V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and fast switching will benefit. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
· 22 A, 150 V. RDS(ON) = 80 m @ VGS = 10 V RDS(ON) = 90 m @ VGS = 6 V
· Low gate charge (40nC typical) · Fast switching speed · High performance trench technology for extremely low RDS(ON) · 175°C maximum junction temperature rating
D
D
G
G D TO-220 S
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
150 ± 20
(Note 1) (Note 1)
Units
V V A A W W°/C °C
22 50 93 0.63 65 to +175
Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
Thermal Characteristics
RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.6 62.5 °C/W °C/W
Package Marking and Ordering Information
Device Marking FDB2570 FDP2570 Device FDB2570 FDP2570 Reel Size 13'' Tube Tape width 24mm n/a Quantity 800 units 45 units
2001 Fairchild Semiconductor Corporation
FDP2570/FDB2570 Rev C(W)
FDP2570/FDB2570
Electrical Characteristics
Symbol
WDSS IAR
TA = 25°C unless otherwise noted
Parameter
Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)
Test Conditions
VDD = 75 V, ID = 11 A
Min
Typ
Max Units
375 11 mJ A
Drain-Source Avalanche Ratings (Note 1)
Off Characteristics
BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 120 V, VGS = 20 V, VGS = 20 V, VGS = 0 V VDS = 0 V VDS = 0 V 150 154 1 100 100 V mV/°C µA nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 11 A ID = 10 A VGS = 6.0 V, VGS = 10 V, ID = 11 A, TJ = 125°C VGS = 10 V, VDS = 10 V, VDS = 10 V ID = 11 A
2
2.6 7 61 63 127
4
V mV/°C
80 90 175
m
ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
25 39 1911 106 33 12 5 33 23 22 10 53 37 56
A S pF pF pF ns ns ns ns nC nC nC
Dynamic Characteristics
VDS = 75 V, f = 1.0 MHz V GS = 0 V,
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
VDD = 75 V, VGS = 10 V,
ID = 1 A, RGEN = 6
VDS = 75 V, VGS = 10 V
ID = 11 A,
40 7 12
DrainSource Diode Characteristics and Maximum Ratings
IS VSD
Notes: 1. Calculated continuous current based on maximum allowable junction temperature. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward VGS = 0 V, IS = 11 A Voltage
22
(Note 2)
A V
0.83
1.3
FDP2570/FDB2570 Rev C(W)
FDP2570/FDB2570
Typical Characteristics
50 5.0V 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V ID, DRAIN CURRENT (A) 40
1.6
1.4 VGS = 4.0V 1.2 4.5V 5.0V 10V 1
30
20 4.0V 10
0 0 3 6 9 12 15 VDS, DRAIN-SOURCE VOLTAGE (V)
0.8 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.35 RDS(ON), ON-RESISTANCE (OHM)
2.9 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5 2.1 1.7 1.3 0.9 0.5 0.1 -65 -35 -5 25 55 85 115
o
ID = 11 A VGS = 10V
ID = 5.5 A 0.3 0.25 0.2 0.15 0.1 0.05 0 3 4 5 6 7 8 VGS, GATE TO SOURCE VOLTAGE (V) 9 10 TA = 25oC TA = 125oC
145
175
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
50 VDS = 50V ID, DRAIN CURRENT (A) 40 IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 VGS = 0V 10 1 0.1 0.01 0.001 0.0001 TA = 125oC 25oC -55oC
30
20
TA = 125oC 25oC -55oC
10
0 2 2.5 3 3.5 4 4.5 5 VGS, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDP2570/FDB2570 Rev C(W)
FDP2570/FDB2570
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 11A 8 75V 6 VDS = 25V 50V
CAPACITANCE (pF)
3000 2500 CISS 2000 1500 1000 COSS 500 CRSS 0 f = 1MHz VGS = 0 V
4
2
0 0 6 12 18 24 30 36 42 Qg, GATE CHARGE (nC)
0
20
40
60
80
100
120
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 RDS(ON) LIMIT
Figure 8. Capacitance Characteristics.
2000
10us 100us
P(pk), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
10
1ms 10ms 100ms DC
1500
SINGLE PULSE RJA = 1.6°C/W TA = 25°C
1000
1
VGS = 10V SINGLE PULSE RJC = 1.6oC/W TA = 25oC
500
0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V)
0 0.00001
0.0001
0.001
0.01
0. 1
1
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2 0.1 0.05 0.02 0.01 SINGLE PULSE
RJA(t) = r(t) * RJC RJC = 1.6 °C/W P(pk ) t1 t2 T J - T A = P * R J C (t) Duty Cycle, D = t1 / t2
0.1
0.01 0.00001
0.0001
0.001
0.01
0.1
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1. Transient thermal response will change depending on the circuit board design.
FDP2570/FDB2570 Rev C(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM
OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM
STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. H3
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