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Details, datasheet, quote on part number:FDP3652
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| Part: | FDP3652 |
| Description: | FDP3652 - Discrete Commercial N-channel UltraFET Trench MOSFET, 100V, 61A, 0.016 Ohms @ VGS = 10V, TO-220 Package |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FDP3652 datasheet File size : 279 kB |
| Request For quote: | Find where to buy FDP3652
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Datasheet text preview:
FDB3652 / FDP3652 / FDI3652
October 2002
FDB3652 / FDP3652 / FDI3652
N-Channel PowerTrench® MOSFET 100V, 61A, 16m
Features
· r D S(ON) = 14m (Typ.), VGS = 10V, ID = 61A · Qg(tot) = 41nC (Typ.), VGS = 10V · Low Miller Charge · Low QRR Body Diode · UIS Capability (Single Pulse and Repetitive Pulse) · Qualified to AEC Q101
Formerly developmental type 82769
Applications
· DC/DC Converters and Off-line UPS · Distr ibuted Power Architectures and VRMs · Pr imar y Switch for 24V and 48V Systems · High Voltage Synchronous Rectifier · Direct Injection / Diesel Injection Systems · 42V Automotive Load Control · Electronic Valve Train Systems
DRAIN (FLANGE) GATE SOURCE DRA IN GATE DRAIN (FLANGE)
SOURCE DRAIN GATE
D
SOURCE
G
TO-263AB
FDB SERIES
TO-220AB
FDP SERIES
DRAIN (FLANGE)
TO-262AA
FDI SERIES
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VD SS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC , VGS = 10V) with R JA = 43oC/W) Pulsed E AS PD TJ, TST G Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 61 43 9 Figure 4 182 150 1.0 -55 to 175 A A A A mJ W W/oC
o
Ratings 100 ±20
Units V V
C
Thermal Characteristics
R JC R JA R JA Thermal Resistance Junction to Case TO-220, TO-263, TO-262 Thermal Resistance Junction to Ambient TO-220, TO-263, TO-262 (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 1.0 62 43
o o o
C/W C/W C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reli ability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2002 Fairchild Semiconductor Corporation F DB 36 52 / FDP3652 / FDI3652 Re v. B
FDB3652 / FDP3652 / FDI3652
Package Marking and Ordering Information
Device Marking FDB3652 FDP3652 FDI3652 Device FD B3652 FD P3652 FDI3652 Package TO-263AB TO-220AB TO-262AA Reel Size 330mm Tube Tube Tape Width 24mm N/A N/A Quantity 800 units 50 units 50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS ID SS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VD S = 80V VGS = 0V VGS = ±20V TC= 150oC 105 1 250 ±100 V µA nA
On Characteristics
VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ID = 61A, VGS = 10V rD S ( O N ) Drain to Source On Resistance ID = 30A, VGS = 6V ID = 61A, VGS = 10V, TJ = 175oC 2 0.014 0.018 0.035 4 0.016 0.026 0.043 V
Dynamic Characteristics
CISS CO S S CR S S Qg(TOT) Q g ( TH ) Qg s Qgs2 Qg d Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge VD S = 25V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 2V VD D = 50V ID = 61A Ig = 1.0mA 2880 390 100 41 5 15 10 10 53 6.5 pF pF pF nC nC nC nC nC
Switching Characteristics (VGS = 10V)
tON t d ( O N) tr t d ( O FF) tf t O FF Tur n- On Time Tur n- On Delay Time Rise Time Tur n- Off Delay Time Fall Time Tur n- Off Time VD D = 50V, ID = 61A VGS = 10V, RGS = 6.8 12 85 26 45 146 107 ns ns ns ns ns ns
Drain-Source Diode Characteristics
V SD t rr Q RR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 61A ISD = 30A ISD = 61A, dISD/dt = 100A/µs ISD = 61A, dISD/dt = 100A/µs 1.25 1.0 62 45 V V ns nC
Notes: 1: Starting TJ = 25°C, L = 0.228mH, IAS = 40A. 2: Pulse Width = 100s
©2002 Fairchild Semiconductor Corporation
F DB 36 52 / FDP3652 / FDI3652 Re v. B
FDB3652 / FDP3652 / FDI3652
Typical Characteristics TC = 25°C unless otherwise noted
1.2 75
POWER DISSIPATION MULTIPLIER
1.0 ID, DRAIN CURRENT (A) 0 25 50 75 100 125 150 175
0.8
50
0.6
0.4
25
0.2
0 TC , CASE TEMPERATURE (o C)
0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs Ambient Temperature
2 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
Figure 2. Maximum Continuous Drain Current vs Case Temperature
ZJC, NORMALIZED THER MAL IMPEDANCE
PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-3 10-2 t , RECTANGULAR PULSE DURATION (s) 10-1 100 101
SINGLE PULSE 0.01 10- 5 10- 4
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
TC = 25oC FOR TEMPERATURES TRANSCONDU CTANCE MAY LIMIT CURRENT IN THIS REGION A BOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150 VGS = 10V
IDM, PEAK CURRENT (A)
100
50
10-5
10- 4
10-3
10- 2 t , PULSE WIDTH (s)
10-1
100
101
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation
F DB 36 52 / FDP3652 / FDI3652 Re v. B
FDB3652 / FDP3652 / FDI3652
Typical Characteristics TC = 25°C unless otherwise noted
1000 10µs 100 100 µs 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1ms 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 200 10ms DC 1 0.01 0.1 1 tAV, TIME IN AVALANCHE (ms) 10 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 100 STARTING TJ = 25oC 500 If R = 0 tAV = (L)(I AS)/(1.3*RATED BVDSS - VDD) If R ¼ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
STARTING TJ = 150oC
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching Capability
125
125 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDD = 15V ID, DRAIN CURRENT (A)
VGS = 10V 100
VGS = 7V VGS = 6V
100 ID , DRAIN CURRENT (A)
75 TJ = 175o C 50 TJ = 25 25o C TJ = -55oC
75
50
TC = 25oC PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX
25 VGS = 5V
0 3 5 6 VGS , GATE TO SOURCE VOLTAGE (V) 4 7
0 0 1 2 3 VDS , DRAIN TO SOURCE VOLTAGE (V) 4
Figure 7. Transfer Characteristics
20 DRAIN TO SOURCE ON RESISTANCE(m) NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 18 VGS = 6V
Figure 8. Saturation Characteristics
3.0 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 2.5
2.0
16
1.5
1.0
14 VGS = 10V 12 0 20 40 ID, DRAIN CURRENT (A) 60
0.5 VGS = 10V, I D = 61A 0 - 80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200
Figure 9. Drain to Source On Resistance vs Drain Current
Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature
©2002 Fairchild Semiconductor Corporation
F DB 36 52 / FDP3652 / FDI3652 Re v. B
FDB3652 / FDP3652 / FDI3652
Typical Characteristics TC = 25°C unless otherwise noted
1.4 VGS = VDS, ID = 250µA 1.2 NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE BREAKD OWN VOLTAGE 1.2 ID = 250µA
1.1
1.0
0.8
1.0
0.6
0.4 -80
0.9 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 - 80 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC ) 200
Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature
5000
Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature
10 VGS , GATE TO SOURCE VOLTAGE (V) VDD = 50V 8
CISS = CGS + CGD C, CAPACITANCE (pF) 1000 COSS CDS + CGD
6
CRSS = CGD
4
100 VGS = 0V, f = 1MHz 40 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100
2
WAVEFORMS IN DESCENDING ORDER: ID = 61A ID = 30A 0 10 20 30 Qg, GATE CHARGE (nC) 40 50
0
Figure 13. Capacitance vs Drain to Source Voltage
Figure 14. Gate Charge Waveforms for Constant Gate Currents
©2002 Fairchild Semiconductor Corporation
F DB 36 52 / FDP3652 / FDI3652 Re v. B
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