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Details, datasheet, quote on part number:FDP3672
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Datasheet text preview:
FDP3672
April 2003
FDP3672
N-Channel PowerTrench® MOSFET 107V, 41A, 33m
Features
· r D S(ON) = 26m (Typ.), VGS = 10V, ID = 41A · Qg(tot) = 28nC (Typ.), VGS = 10V · Low Miller Charge · Low QRR Body Diode · Optimized efficiency at high frequencies · UIS Capability (Single Pulse and Repetitive Pulse) · Qualified to AEC Q101
Applications
· DC/DC converters and Off-Line UPS · Distributed Power Architectures and VRMs · Primary Switch for 24V and 48V Systems · High Voltage Synchronous Rectifier · Direct Injection / Diesel Injection Systems · 42V Automotive Load Control · Electronic Valve Train Systems
Formerly developmental type 82760
D
DR AIN (FLANGE) S O URCE DRAIN GATE TO-220AB FDP SERIES
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VD SS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC , VGS = 10V, R JA = 62oC/W) Pulsed E AS PD TJ, TST G Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 41 31 5.9 Figure 4 48 135 0.9 -55 to 175 A A A A mJ W W/oC
o
Ratings 107 ±20
Units V V
C
Thermal Characteristics
R JC R JA Thermal Resistance Junction to Case TO-220 Thermal Resistance Junction to Ambient TO-220 (Note 2) 1.11 62
o o
C/W C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reli ability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2003 Fairchild Semiconductor Corporation
FDP3672 Rev. A1
FDP3672
Package Marking and Ordering Information
Device Marking FDP3672 Device FD P3672 Package TO-220AB Reel Size Tube Tape Width N/A Quantity 50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Unit s
Off Characteristics
BVDSS ID SS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VD S = 80V VGS = 0V VGS = ±20V TC= 150oC 107 1 250 ±100 V µA nA
On Characteristics
VGS(TH) Gate to Source Threshold Voltage V GS = VDS, ID = 250µA ID = 41A, VGS = 10V rD S ( O N ) Drain to Source On Resistance ID = 21A, VGS = 6V, ID = 41A, VGS = 10V, TC = 175oC 2 0.026 0.031 0.063 4 0.033 0.055 0.070 V
Dynamic Characteristics
CISS CO S S CR S S Qg(TOT) Q g ( TH ) Qg s Qgs2 Qg d Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge VD S = 25V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 2V VD D = 50V ID = 41A Ig = 1.0mA 1670 240 55 28 3.9 12 8.0 6.5 37 5 pF pF pF nC nC nC nC nC
Resistive Switching Characteristics (VGS = 10V)
tON t d ( O N) tr t d ( O FF) tf t O FF Tur n-On Time Tur n-On Delay Time Rise Time Tur n-Off Delay Time Fall Time Tur n-Off Time VD D = 50V, ID = 41A VGS = 10V, RGS = 11.0 12 48 24 27 90 77 ns ns ns ns ns ns
Drain-Source Diode Characteristics
V SD t rr Q RR S ource to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 41A ISD = 21A ISD = 30A, dISD/dt =100A/µs ISD = 30A, dISD/dt =100A/µs 1.25 1.0 58 101 V V ns nC
Notes: 1: Starting TJ = 25°C, L = 0.11mH, IAS = 30A. 2: Pulse Width = 100s
©2003 Fairchild Semiconductor Corporation
F DP3 6 72 Rev. A1
FDP3672
Typical Characteristics TC = 25°C unless otherwise noted
1.2 50 VGS = 10V POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 0 25 50 75 100 125 150 175 40
0.8
30
0.6
0.4
20
0.2
10
0 TC , CASE TEMPERATURE (oC)
0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (o C)
Figure 1. Normalized Power Dissipation vs Ambient Temperature
2 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
Figure 2. Maximum Continuous Drain Current vs Case Temperature
ZJC, NORMALIZED THER MAL IMPEDANCE
PDM 0.1 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-3 10-2 10-1 t , RECTANGULAR PULSE DURATION (s) 100 101
0.01 10- 5 10- 4
Figure 3. Normalized Maximum Transient Thermal Impedance
500 TRANSC ONDUCTANCE MAY LIMIT CURRENT IN THIS REGION IDM, PEAK CURRENT (A)
TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS:
VGS = 10V
I = I 25
175 - TC 150
100
30 10 -5 10-4 10- 3 10-2 t , PULSE WIDTH (s) 10- 1 100 10 1
Figure 4. Peak Current Capability
©2003 Fairchild Semiconductor Corporation
F DP3 6 72 Rev. A1
FDP3672
Typical Characteristics TC = 25°C unless otherwise noted
200 100 10µs IAS, AVALANCHE CURRENT (A)
200 100 If R = 0 tAV = (L)(I AS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
ID, DRAIN CURRENT (A)
100µs 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON)
STARTING TJ = 25oC 10
1 SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V)
1ms 10ms DC
STARTING TJ = 150oC
1
100
200
0.001
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching Capability
80 TC = 25oC 60 VGS = 10V VGS = 7V VGS = 6V
80
PULSE DURATION = 80µs DU TY CYCLE = 0.5% MAX VDD = 15V ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
60
TJ = 175o C 40 TJ = 25o C 20 TJ = -55oC
40 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 20 VGS = 5V
0 3.5 4 .0 4.5 5 .0 5.5 6 .0 VGS , GATE TO SOURCE VOLTAGE (V) 6.5
0 0 0 .5 1.0 1.5 2.0 2 .5 VDS , DRAIN TO SOURCE VOLTAGE (V) 3.0
Figure 7. Transfer Characteristics
40 DRA IN TO SOURCE ON RESISTANCE (m ) PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 35 VGS = 6V 30 NORMALIZED DRAIN TO SOURCE ON RESISTANCE
Figure 8. Saturation Characteristics
2.5 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 2.0
1.5
25
VGS = 10V
1.0 VGS = 10V, ID = 41A 0.5
20
15 0 10 20 30 ID, DRAIN CURRENT (A) 40 50
-80
- 40
0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC)
200
Figure 9. Drain to Source On Resistance vs Drain Current
Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature
©2003 Fairchild Semiconductor Corporation
F DP3 6 72 Rev. A1
FDP3672
Typical Characteristics TC = 25°C unless otherwise noted
1.2 VGS = VDS, ID = 250µA 1.0 NORMALIZED GATE THRESHOLD VOLTAGE N ORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.2 ID = 250µA
1.1
0.8
1.0
0.6
0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (o C) 200
0.9 -80 - 40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (o C) 200
Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature
3000 CISS = CGS + CGD COSS CDS + CGD
Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature
10 VGS , GATE TO SOURCE VOLTAGE (V) VDD = 50V 8
1000 C, CAPACITANCE (pF)
6
CRSS = CGD 100
4
2
VGS = 0V, f = 1MHz 10 0.1 1 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 100
WAVEFORMS IN DESCENDING ORDER: ID = 41A ID = 6A 0 5 10 15 20 25 30
0 Qg, GATE CHARGE (nC)
Figure 13. Capacitance vs Drain to Source Voltage
Figure 14. Gate Charge Waveforms for Constant Gate Currents
©2003 Fairchild Semiconductor Corporation
F DP3 6 72 Rev. A1
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