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Details, datasheet, quote on part number:FDP4020P
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| Part: | FDP4020P |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => P-Channel |
| Description: | P-channel 2.5V Specified Enhancement Mode Field Effect Transistor |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FDP4020P datasheet File size : 81 kB |
| Request For quote: | Find where to buy FDP4020P
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Datasheet text preview:
FDP4020P
September 2000
FDP4020P/FDB4020P
P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor
General Description
This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage load switch when switching outputs on or off for power management.The part may also be used in conjunction with DC-DC converters requiring P-Channel.
Features
· -16 A, -20 V. RDS(on) = 0.08 @ VGS = -4.5 V RDS(on) = 0.11 @ VGS = -2.5 V. · Critical DC electrical parameters specified at elevated temperature. · High density cell design for extremely low RDS(on). · TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. · 175°C maximum junction temperature rating.
S
G
D
A b s o l u t e M a x i m u m Ratings
Sym bol
V DSS V GSS ID PD T J, T S T G R JC R JA D ra in -S o u rc e V o lt a g e G a t e -S o u rc e V o lt a g e D r a i n Current - Continuous - P u ls e d
T A = 25°C unless otherw is e noted
P a ra m e te r
FD P4020P
-2 0 ±8 -16 -4 8 3 7 .5
FD B 4020P
U n it s
V V A W W /° C °C ° C /W ° C /W
T o t a l P o w e r Dissipation @ T C = 25 ° C Derate above 25 ° C O p e r a t i n g and S t o r a g e Junction Tem p e r a t u r e Range T h e r m a l Resistance, Junction-to- Case T h e r m a l Resistance, Junction-to- A m b i e n t
( N o t e 1)
0 .2 5 - 6 5 to +175 4 6 2 .5 40
T h e r m a l C h a r a c t e r is tic s
P a c k a g e O u t l i n e s and O r d e r i n g Inform a t i o n
D e v ic e M a rk in g
FDP 4020P
D e v ic e
FDP 4020P
R e e l Size
1 3 ''
T a p e W id th
12m m
Q u a n t it y
2 5 0 0 units
2 0 0 0 Fairchild Semiconductor International
FDP4020P Rev. B
FDP4020P
Electrical Characteristics
Symbol
BVDSS BVDSS T J IDSS I G SSF I G SSR
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
-20
Typ
Max
Un i t s
V
Off Characteristics
Drain-Source Breakdown VGS = 0 V, ID = -250 µA Voltage Breakdown Voltage ID = -250 µA, Referenced to 25°C Temperature Coefficient Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
-28 -1 100 -100
mV / °C µA nA nA
VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V
On Characteristics
VGS(th) VGS(th) T J RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = -250 µA ID = -250 µA, Referenced to 25°C VGS = -4.5 V,ID = -8 A, VGS = -4.5 V,ID = -8 A,TJ=125°C VGS = -2.5 V,ID = -7 A VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -8 A
-0.4
-0.58 2 0.068 0.098 0.096
-1
V mV / °C
0.08 0.13 0.110
ID(on) gFS
-20 14
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = -10 V, VGS = 0 V, f = 1.0 MHz
665 270 70
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = -5 V, ID = -1 A, VGS = -4.5 V, RGEN = 6
8 24 50 29
16 38 80 45 13
ns ns ns ns nC nC nC
VDS = -5 V, ID = -16 A, VGS = -4.5 V
9.5 1.3 2.2
Drain-Source Diode Characteristics and Maximum Ratings
IS I SM V SD Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -16 A
(Note 2) (Note 2) (Note 2)
-16 -48 -1.2
A V
Notes: 1. RJA is the sum of the juntion-to-case and case-to-ambient thermal resistance.For T0-263 the device is mounted on circuit board with a 1in2 pad of 2 oz. copper. 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDP4020P Rev. B
FDP4020P
Typical Characteristics
40 -4.0V -3.5V -3.0V
2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = -4.5V
-ID, DRAIN CURRENT (A)
32
1.8 VGS = -2.0V 1.6 1.4 1.2 1 0.8 -2.5V -3.0V -3.5V -4.0V -4.5V
24
16
-2.5V
8
-2.0V
0 0 2 4 6 8 10 -VDS, DRAIN-SOURCE VOLTAGE (V)
0
5
10
15
20
25
30
-ID, DIRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0. 2 RDS(ON), ON-RESISTANCE (OHM)
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100
o
ID = -16A VGS = -4.5V
ID = -8A 0.16
0.12
TA = 125 C
o
0.08 TA = 25 C
o
0.04
0
125
150
175
1.5
2
2.5
3
3. 5
4
4. 5
5
TJ, JUNCTION TEMPERATURE ( C)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
20 25 C 125 C
o o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 -IS, REVERSE DRAIN CURRENT (A) VGS = 0V
VDS = -5V -ID, DRAIN CURRENT (A) 16
TA = -55 C
o
1
12
TA = 125 C 25 C -55 C
o o
o
8
0.01
4
0 0 0.5 1 1.5 2 2. 5 3 3.5 4 -VGS, GATE TO SOURCE VOLTAGE (V)
0.0001 0 0.4 0.8 1.2 1.6 -VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDP4020P Rev. B
FDP4020P
Typical Characteristics
5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -16A 4
(continued)
VDS = -5V -10V
1400 1200 CAPACITANCE (pF) 1000 800 600 400 200 COSS CRSS 0 4 8 12 16 20 CISS f = 1 MHz VGS = 0 V
-15V
3
2
1
0 0 3 6 Qg, GATE CHARGE (nC) 9 12
0
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
100 RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 100µs 1ms
Figure 8. Capacitance Characteristics.
1000 SINGLE PULSE 800 POWER (W) RJC = 4 C/W TA = 25 C 600
o o
10
10ms DC 100ms
1
400
VGS = -4.5V SINGLE PULSE RJC = 4 C/W TA = 25 C
o o
200
0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100
0 0.0001 0.001 0.01 0.1 1 10 SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1 TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.5
D = 0.5
R JC (t) = r(t) * R JC R JC = 4°C/W
P(pk)
0.1
0.2
0.2 0.05 Single Pulse
t1
t2
0.1
TJ - TA = P * R JC (t) Duty Cycle, D = t 1 / t 2
0.05 0.0001
0.001
0.01 t1 , TIME (sec)
0.1
1
10
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1. Transient themal response will change depending on the circuit board design.
FDP4020P Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST®
DISCLAIMER
FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM POPTM PowerTrench®
QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM
VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. F1
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