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Details, datasheet, quote on part number:FDP4030L
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| Part: | FDP4030L |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | N-channel Logic Level Enhancement Mode Field Effect Transistor |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FDP4030L datasheet File size : 104 kB |
| Request For quote: | Find where to buy FDP4030L
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Datasheet text preview:
March 1998
FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
20 A, 30 V. RDS(ON) = 0.035 @ VGS=10 V RDS(ON) = 0.055 @ VGS=4.5V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175°C maximum junction temperature rating.
_______________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
TC = 25°C unless otherwise noted
FDP4030L
FDB4030L
Units
VDSS VGSS ID PD TJ,TSTG TL
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
(Note 1) (Note 1)
30 ±20 20 60 37.5 0.25 -65 to 175 275
V V A W W/°C °C °C
Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
THERMAL CHARACTERISTICS
RJC RJA
4 62.5
°C/W °C/W
© 1998 Fairchild Semiconductor Corporation
FDP4030L Rev.B1
Electrical Characteristics (T
Symbol Parameter
C
= 25°C unless otherwise noted)
Conditions
(Note 1)
Min
Typ
Max
Unit
DRAIN-SOURCE AVALANCHE RATINGS OFF CHARACTERISTICS
WDSS IAR BVDSS IDSS IGSSF IGSSR VGS(th)
Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse
(Note 1)
VDD = 15 V, ID = 7 A
50 7
mJ A V mV/oC
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25oC VDS = 24 V, VGS = 0 V TJ = 125°C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25 C VGS = 10 V, ID = 10 A TJ = 125°C VGS = 10 V, ID = 4.5 A
o
30 33 10 1 100 -100 1 1.6 -4.1 0.025 0.048 0.046 30 11 365 210 70 0.035 0.06 0.055 2
BVDSS/TJ Breakdown Voltage Temp. Coefficient
µA mA nA nA V mV/oC
ON CHARACTERISTICS
Gate Threshold Voltage Gate Threshold Voltage Temp. Coefficient Static Drain-Source On-Resistance
VGS(th)/TJ
RDS(ON)
ID(on) gFS
On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 1)
VGS = 10 V, VDS = 10 V VDS = 10 V, ID = 10 A VDS = 15 V, VGS = 0 V, f = 1.0 MHz
A S pF pF pF 15 15 40 20 18 nS nS nS nS nC nC nC 20 60 1.12 1.08 1.3 1.2 A A V
DYNAMIC CHARACTERISTICS
Ciss Coss Crss
tD(on) tr tD(off) tf Qg Qgs Qgd IS ISM VSD
SWITCHING CHARACTERISTICS
Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 15 V, ID = 10 A, VGS = 10 V, RGEN = 10
8 8 20 10
VDS = 24 V ID = 10 A, VGS= 10 V
13 2 4
DRAIN-SOURCE DIODE CHARACTERISTICS
Maximum Continuos Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 10 A
(Note 1)
TJ = 125°C
Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
FDP4030L Rev.B1
Typical Electrical Characteristics
40 I D , DRAIN-SOURCE CURRENT (A) 2.5
6.0V
30 R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 10V
5.0V 4.5V
2
VGS =4.5V 5.0V 5.5V
20
1.5
6.0V
4.0V
10
7.0V
8.0V
1
10V
3.5V
0
0.5 0 1 2 3 4 5 VDS , DRAIN-SOURCE VOLTAGE (V)
0
10
20 I D , DRAIN CURRENT (A)
30
40
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.8 DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50
0.16
R DS(ON) , ON-RESISTANCE (OHM)
I D = 10A V GS = 10V
ID = 10A
0.12
R DS(ON) , NORMALIZED
0.08
TA = 1 2 5 ° C
0.04
TA = 25° C
0 2 4 6 8 10
-25
0
25
50
75
100
125
150
175
TJ , JUNCTION TEMPERATURE (°C)
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
15
15
I D , DRAIN CURRENT (A)
12
25°C 125°C
IS , REVERSE DRAIN CURRENT (A)
VDS = 10V
TJ = -55°C
VGS =0V TJ = 125°C 25°C -55°C
1
9
0.1
6
0.01
3
0.001
0
0.0001 1 1.5 2 2.5 3 3.5 4 4.5 5 VGS , GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6 . Body Diode Forward Voltage Variation with Source Current and Temperature.
FDP4030L Rev.B1
Typical Electrical Characteristics (continued)
15 VGS , GATE-SOURCE VOLTAGE (V)
ID = 10A
12
VDS = 6V
CAPACITANCE (pF)
1000
12V 24V
400
Ciss Coss
9
200
6
100
3
40 0.1
f = 1 MHz VGS = 0V
0.3 1 4
Crss
0
10
30
0
4
8
12
16
20
Q g , GATE CHARGE (nC)
VDS , DRAIN TO SOURCE VOLTAGE (V)
EFFECTIVE
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100 50 I D , DRAIN CURRENT (A) 20 10 5 2 1 0.5 0.5
R
D S(O N)
1000
Lim
it
10 10 µs 0µ s
POWER (W)
800
1m s
10 ms 10 0m DC s
SINGLE PULSE R JC = 4°C/W TC = 25°C
600
400
VGS = 10V SINGLE PULSE RJC = 4 o C/W TC = 25 °C
1 3 5
200
10
20
30
50
0 0.0001
0.001
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
NORMALIZED
V DS , DRAIN-SOURCE VOLTAGE (V))
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1
r(t), TRANSIENT THERMAL RESISTANCE
0.5
D = 0.5
R JC (t) = r(t) * RJC R JC = 4.0 °C/W
0.2 0.1 0.05 Single Pulse P(pk)
0.2
t1
0.1
t2
TJ - TC = P * RJC (t) Duty Cycle, D = t1 /t2
0.001 0.01 t 1 ,TIME (sec) 0.1 1 10
0.05 0.0001
Figure 11. Transient Thermal Response Curve.
FDP4030L Rev.B1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLT TM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST ® FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench ® QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER ®
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET ®
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4
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