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Details, datasheet, quote on part number:FDP42AN15A0
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Datasheet text preview:
FDP42AN15A0 / FDB42AN15A0
September 2002
FDP42AN15A0 / FDB42AN15A0
N-Channel PowerTrench® MOSFET 150V, 35A, 42m
Features
· r D S(ON) = 36m (Typ.), VGS = 10V, ID = 12A · Qg(tot) = 33nC (Typ.), VGS = 10V · Low Miller Charge · Low Qrr Body Diode · UIS Capability (Single Pulse and Repetitive Pulse) · Qualified to AEC Q101
Formerly developmental type 82864
Applications
· DC/DC Converters and Off-line UPS · Distr ibuted Power Architectures and VRMs · Pr imar y Switch for 24V and 48V Systems · High Voltage Synchronous Rectifier · Direct Injection / Diesel Injection Systems · 42V Automotive Load Control · Electronic Valve Train Systems
DRAI N (FLANGE) GATE SOURCE DRAIN GATE DRAIN (FLANGE)
D
S O URCE
G S
TO-263AB
FDB SERIES
TO-220AB
FDP SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VD SS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC , VGS = 10V, with R JA = 43oC/W) Pulsed E AS PD TJ, TST G Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 35 24 5 Figure 4 90 150 1.00 -55 to 175 A A mJ W W/oC
o
Ratings 150 ±20
Units V V A
C
Thermal Characteristics
R JC R JA R JA Thermal Resistance Junction to Case TO-220,TO-263 Thermal Resistance Junction to Ambient TO-220,TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 1.0 62 43
o o o
C/W C/W C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2002 Fairchild Semiconductor Corporation FDP 4 2A N1 5A 0 / FDB42AN15A0 Rev. C
FDP42AN15A0 / FDB42AN15A0
Package Marking and Ordering Information
Device Marking FDB42AN15A0 FDP42AN15A0 Device FDB42AN 15A0 FDP42AN 15A0 Package TO-263AB TO-220AB Reel Size 330mm Tube Tape Width 24mm N/A Quantity 800 units 50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B VDSS ID SS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V V D S = 120V VGS = 0V VGS = ±20V TC = 150oC 150 1 250 ±100 V µA nA
On Characteristics
VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ID = 12A, VGS = 10V rD S ( O N ) Drain to Source On Resistance ID = 6A, VGS = 6V ID = 12A, VGS = 10V, TJ = 175oC 2 0.036 0.040 0.090 4 0.042 0.060 0.107 V
Dynamic Characteristics
CISS CO S S CR S S Qg(TOT) Q g ( TH ) Qg s Qgs2 Qg d Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge V D S = 25V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 2V VD D = 75V ID = 12A Ig = 1.0mA 2150 225 45 30 4.2 9.5 5.3 6.9 39 5.4 pF pF pF nC nC nC nC nC
Switching Characteristics (VGS = 10V)
tON t d ( O N) tr t d ( O FF) tf t O FF Tur n- On Time Tur n- On Delay Time Rise Time Tur n- Off Delay Time Fall Time Tur n- Off Time V D D = 75V, ID = 12A VGS = 10V, RGS = 7.5 11 19 27 23 46 74 ns ns ns ns ns ns
Drain-Source Diode Characteristics
V SD t rr Q RR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 12A ISD = 6A ISD = 12A, dISD/dt = 100A/µs ISD = 12A, dISD/dt = 100A/µs 1.25 1.0 82 204 V V ns nC
Notes: 1: Starting TJ = 25°C, L = 0.2mH, IAS = 30A.
©2002 Fairchild Semiconductor Corporation
F DP4 2 AN1 5 A0 / FDB42AN15A0 Rev. C
FDP42AN15A0 / FDB42AN15A0
Typical Characteristics TC = 25°C unless otherwise noted
1.2 40 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 0 25 50 75 100 125 150 175 30
0.8
0.6
20
0.4
10
0.2
0 TC , CASE TEMPERATURE (o C)
0 25 50 75 100 125 (oC) 150 175
TC, CASE TEMPERATURE
Figure 1. Normalized Power Dissipation vs Ambient Temperature
2 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
Figure 2. Maximum Continuous Drain Current vs Case Temperature
ZJC, NORMALIZED THER MAL IMPEDANCE
PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-3 10-2 t , RECTANGULAR PULSE DURATION (s) 10-1 100 101
SINGLE PULSE 0.01 10- 5 10- 4
Figure 3. Normalized Maximum Transient Thermal Impedance
500
TC = 25oC FOR TEMPERATURES A BOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150
IDM, PEAK CURRENT (A)
TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 100 VGS = 10V
10 10-5 10- 4 10-3 10- 2 t , PULSE WIDTH (s) 10-1 100 101
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation
F DP4 2 AN1 5 A0 / FDB42AN15A0 Rev. C
FDP42AN15A0 / FDB42AN15A0
Typical Characteristics TC = 25°C unless otherwise noted
200 100 10µs IAS, AVALANCHE CURRENT (A) 100 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
ID, DRAIN CURRENT (A)
10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 1 10
100µs
STARTING TJ = 25oC 10 STARTING TJ = 150 oC
1ms
10m s DC 1 100 300 0.001 0.01 0.1 1 tAV, TIME IN AVALANCHE (ms) 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching Capability
80 VGS = 20V VGS = 10V
80
PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDD = 15V ID, DRAIN CURRENT (A)
ID , DRAIN CURRENT (A)
60
60 VGS = 6V 40
40
TJ = 175oC TJ = 25o C TJ = -55oC
VGS = 5V 20 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX
20
TC = 25o C 5
0 3 4 5 6 7 VGS , GATE TO SOURCE VOLTAGE (V) 8
0 0 1 2 3 4 VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
50 DRAIN TO SOURCE ON RESISTANCE(m) NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 6V 45 2.5
Figure 8. Saturation Characteristics
PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX
2.0
1.5
40
1.0
VGS = 10V 35 0 10 20 ID, DRAIN CURRENT (A) 30 40
VGS = 10V, ID =12A 0.5 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC ) 200
Figure 9. Drain to Source On Resistance vs Drain Current
Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature
©2002 Fairchild Semiconductor Corporation
F DP4 2 AN1 5 A0 / FDB42AN15A0 Rev. C
FDP42AN15A0 / FDB42AN15A0
Typical Characteristics TC = 25°C unless otherwise noted
1.2 VGS = VDS, I D = 250µA NORMALIZED DRAIN TO SOURCE B REAKDOWN VOLTAGE 1.2 ID = 250µA
NORMALIZED GATE THRESHOLD VOLTAGE
1.0
1.1
0.8
1.0
0.6
0.4 - 80
-40
0
40
80
120
160
200
0.9 -80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ , JUNCTION TEMPERATURE (o C)
Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature
4000
Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature
10
C, CAPACITANCE (pF)
1000
CISS = CGS + CGD COSS C DS + C GD
VGS , GATE TO SOURCE VOLTAGE (V)
VDD = 75V
8
6
CRSS = CGD 100
4
2
VGS = 0V, f = 1MHz 10 0.1 1 10 150 VDS , DRAIN TO SOURCE VOLTAGE (V)
WAVEFORMS IN DESCEN DING ORDER: ID = 24A ID = 12A 0 5 10 15 20 25 Qg , GATE CHARGE (nC) 30 35
0
Figure 13. Capacitance vs Drain to Source Voltage
Figure 14. Gate Charge Waveforms for Constant Gate Current
©2002 Fairchild Semiconductor Corporation
F DP4 2 AN1 5 A0 / FDB42AN15A0 Rev. C
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