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Details, datasheet, quote on part number:FDP5690
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| Part: | FDP5690 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | 60V N-channel PowerTrench® MOSFET |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FDP5690 datasheet File size : 84 kB |
| Request For quote: | Find where to buy FDP5690
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Datasheet text preview:
FDP5690/FDB5690
July 2000
FDP5690/FDB5690
60V N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency.
Features
· 32 A, 60 V. RDS(ON) = 0.027 @ VGS = 10 V RDS(ON) = 0.032 @ VGS = 6 V. · Critical DC electrical parameters specified at evevated temperature. · Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. · High performance trench technology for extremely low RDS(ON). · 175°C maximum junction temperature rating.
D
D
G
G D S
TO-220
FDP Series
G S
TC = 25°C unless otherwise noted
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Maximum Drain Current
Parameter
FDP5690
60 ±20
FDB5690
Units
V V A W W / °C °C
- Continuous - Pulsed
32 100 58 0.4 -65 to +175
Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
Thermal Characteristics
RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.6 62.5 °C/W °C/W
Package Marking and Ordering Information
Device Marking
FDB5690 FDP5690
2000 Fairchild Semiconductor International
Device
FDB5690 FDP5690
Reel Size
13'' Tube
Tape Width
24mm N/A
Quantity
800 45
FDP5690/FDB5690 Rev. C
FDP5690/FDB5690
Electrical Characteristics
Symbol Parameter Drain-Source Avalanche Ratings
WDSS IAR
Tc = 25°C unless otherwise noted
Test Conditions
(Note1)
Min
Typ
Max
80 32
Units
mJ A
Single Pulse Drain-Source VDD = 30 V, ID = 32A Avalanche Energy Maximum Drain-Source Avalanche Current
Off Characteristics
BVDSS BVDSS T J IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 1)
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 48 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V
60 61 1 100 -100
V mV / °C µA nA nA
On Characteristics
VGS(th) VGS(th) T J RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 16 A, VGS = 10 V, ID = 16 A,TJ = 125°C VGS = 6 V, ID = 15 A VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 16 A
2
2.4 -6.4 0.021 0.042 0.024
4
V mV/ °C
0.027 0.055 0.032
ID(on) gFS
50 32
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 1)
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
1120 160 80
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 30 V, ID = 1 A, VGS = 10 V, RGEN = 6
10 9 24 10
18 18 39 18 33
ns ns ns ns nC nC nC
VDS = 15 V, ID = 16 A, VGS = 10 V
23 3.9 6.8
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 16 A Voltage
(Note 1) (Note 1)
0.92
32 1.2
A V
Note: 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDP5690/FDB5690 Rev. C
FDP5690/FDB5690
Typical Characteristics
80 70 60 5.0V 50 40 30 20 10 0 0 2 4 6 8 10 VDS, DRAIN-SOURCE VOLTAGE (V) 4.0V 4.5V 7.0V 6.0V VGS = 10V ID, DRAIN-SOURCE CURRENT (A)
2.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 1.8 1.6 4.5 V 1.4 1.2 1 0.8 0 20 40 ID, DRAIN CURRENT (A) 60 80 5.0 V 6.0 V 7.0 V 10V VGS = 4.0V
Figure 1. On-Region Characteristics.
2.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON) , ON-RESISTANCE (OHM) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100
o
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.06 ID = 16A 0.05 TA = 125 C
o
ID = 16A VGS = 10V
0.04
0.03
0.02
TA = 25 C
o
0.01
125
150
175
0 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
60 VDS = 5V 50 ID, DRAIN CURRENT (A) 40 30 20 10 0 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) 25 C 125 C
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 IS, REVERSE DRAIN CURRENT (A) VGS = 0V 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125 C 25 C -55 C
o o o
TA = -55 C
o
o
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDP5690/FDB5690 Rev. C
FDP5690/FDB5690
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 16A
(continued)
1600
VDS = 10V 8 30V
20V
CAPACITANCE (pF) 1200 CISS
f = 1MHz V GS = 0 V
6
800
4
400 COSS CRSS 0
2
0 0 5 10 15 20 25
0
10
20
30
40
50
60
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
1000
Figure 8. Capacitance Characteristics.
2500 SINGLE PULSE o RJC = 2.6 C/W TA = 25 C
o
ID DRAIN CURRENT (A)
100
1ms RDS(ON) LIMIT 1s 10s DC VGS = 10V SINGLE PULSE RJC = 2.3 C/W TC = 25 C
o o
2000
10ms
POWER (W)
100
100ms
10
1500
1000
1
500
0.1 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V)
0 0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (ms)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1 TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.5 0.3 0.2
0.1 0.2
D = 0.5
R JC (t) = r(t) * RJC R JC = 2.6 °C/W
P(pk)
0.1
0.05
0.05
0.02 Single Pulse
t1
0.03 0.01 0.02 0.01 0.01
t2
TJ - TC = P * RJC (t) Duty Cycle, D = t1 /t2 0.1 1 t1 ,TIME (ms) 10 100 1000
Figure 11. Transient Thermal Response Curve.
FDP5690/FDB5690 Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GTOTM
DISCLAIMER
HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. E
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