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Details, datasheet, quote on part number:FDP6021P
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Datasheet text preview:
FDP6021P/FDB6021P
April 2001 PRELIMINARY
FDP6021P/FDB6021P
20V P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel power MOSFET uses Fairchild's low voltage PowerTrench process. It has been optimized for power management applications.
Features
· 28 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 V RDS(ON) = 40 m @ VGS = 2.5 V RDS(ON) = 65 m @ VGS = 1.8 V · Critical DC electrical parameters specified at elevated temperature · High performance trench technology for extremely low RDS(ON) · 175°C maximum junction temperature rating
Applications
· Battery management · Load switch · Voltage regulator
.
S
D
G
G
G D TO-220 S
FDP Series
S
TO-263AB
FDB Series
D
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
20 ±8
(Note 1) (Note 1)
Units
V V A W W°C °C
28 80 37 0.25 65 to +175
Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
Thermal Characteristics
RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 4 62.5 °C/W °C/W
Package Marking and Ordering Information
Device Marking FDP6021P FDB6021P Device FDP6021P FDB6021P Reel Size Tube 13" Tape width n/a 24mm Quantity 45 800 units
2001 Fairchild Semiconductor Corporation
FDP6021P/FDB6021P Rev B(W)
FDP6021P/FDB6021P
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on)
TA = 25°C unless otherwise noted
Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA ID = 250 µA,Referenced to 25°C VDS = 16 V, VGS = 8 V, VGS = 8 V VG S = 0 V VDS = 0 V VDS = 0 V
Min
20
Typ
Max Units
V
Off Characteristics
16 1 100 100 0.4 0.7 3 24 31 50 30 40 33 1890 302 124 13 10 80 50 VDS = 10 V, VGS = 4.5 V ID = 14 A, 20 4 7 28 1.3 23 20 128 80 28 30 40 65 42 1.5 mV/°C µA nA nA V mV/°C m
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance
VDS = VGS, ID = 250 µA ID = 250 µA,Referenced to 25°C VGS = 4.5 V, ID = 14 A VGS = 2.5 V, ID = 12 A VGS = 1.8 V, ID = 10 A VGS= 4.5V, ID = 14 A, TJ=125°C VGS = 4.5 V, VDS = 5 V VDS = 5 V, ID = 14 A
ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD
Notes:
OnState Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
A S pF pF pF ns ns ns ns nC nC nC A V
Dynamic Characteristics
VDS = 10 V, f = 1.0 MHz V GS = 0 V,
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
VDD = 10 V, VGS = 4.5 V,
ID = 1 A, RGEN = 6
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward VGS = 0 V, IS = 14 A Voltage 0.9
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 2. TO-220 package is supplied in tube / rail @ 45 pieces per rail. 3. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A
FDP6021P/FDB6021P Rev. B(W)
FDP6021P/FDB6021P
Typical Characteristics
40 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.4
VGS = -4.5V -3.5V
-ID, DRAIN CURRENT (A) 30
-3.0V -2.5V -2.0V
2.2
VGS = -1.8V
2 1.8 1.6 1.4 1.2 1 0.8
20
-2.0V -2.5V -3.0V -3.5V -4.5V
-1.8V
10
-1.5V
0 0 1 2 3 4 5 -VDS, DRAIN-SOURCE VOLTAGE (V)
0
10
20 -ID, DRAIN CURRENT (A)
30
40
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.09 RDS(ON), ON-RESISTANCE (OHM)
1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC)
ID = -14A VGS = -4.5V
ID = -7A
0.07
0.05
TA = 125oC
0.03
TA = 25oC
0.01 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) 5
Figure 3. On-Resistance Variation withTemperature.
30 -IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
VDS = -5V
25 -ID, DRAIN CURRENT (A)
TA = -55oC
25oC 125oC
VGS = 0V
10 1 0.1 0.01 0.001 0.0001
TA = 125oC
20 15 10 5 0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V)
25oC
-55oC
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDP6021P/FDB6021P Rev. B(W)
FDP6021P/FDB6021P
Typical Characteristics
5 -VGS , GATE-SOURCE VOLTAGE (V)
3000 ID =-14A VDS = -5V -10V 2500 CAPACITANCE (pF) CISS 2000 1500 1000 500 CRSS 0
0 5 10 15 20 25
4
f = 1MHz VGS = 0 V
-15V
3
2
COSS
1
0 Qg, GATE CHARGE (nC)
0
5
10
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 RDS(ON) LIMIT 1ms 10ms 10 100ms 1s DC VGS = -4.5V SINGLE PULSE RJC = 4oC/W TA = 25oC 1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100
Figure 8. Capacitance Characteristics.
1000 P(pk), PEAK TRANSIENT POWER (W)
100µs
-ID, DRAIN CURRENT (A)
800
SINGLE PULSE RJC = 4°C/W TA = 25°C
600
400
200
0 0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5
RJA(t) = r(t) + RJA RJC = 4 °C/W
0.2 0.1
0.1
0.05 0.02 0.01
P(pk) t1 t2
SINGLE PULSE
TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.01 0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
FDP6021P/FDB6021P Rev. B(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM
OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM StealthTM
SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. H2
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