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Details, datasheet, quote on part number:FDP6030L
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| Part: | FDP6030L |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => DMOS (Double-diffused MOS) => Logic Level |
| Description: | N-channel Logic Level Enhancement Mode Field Effect Transistor |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FDP6030L datasheet File size : 492 kB |
| Request For quote: | Find where to buy FDP6030L
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Datasheet text preview:
April 1998
FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
52 A, 30 V. RDS(ON) = 0.0135 @ VGS=10 V RDS(ON) = 0.020 @ VGS=4.5 V. Improved replacement for NDP6030L/NDB6030L. Low gate charge (typical 34 nC). Low Crss (typical 175 pF). Fast switching speed.
_________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD TJ,TSTG RJC RJA Parameter Drain-Source Voltage
T C = 25°C unless otherwise note
FDP6030L 30 ±20 52 156 75 0.5 -65 to 175 2 62.5
FDB6030L
Units V V A W W/°C °C °C/W °C/W
Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Maximum Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
THERMAL CHARACTERISTICS
© 1998 Fairchild Semiconductor Corporation
FDP6030L Rev.C1
Electrical Characteristics
Symbol W DSS IAR BVDSS IDSS IGSSF IGSSR VGS(th) Parameter
T C = 25°C unless otherwise noted)
Conditions VDD = 15 V, ID = 21 A
Min
Typ
Max 150 21
Unit mJ A V
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25 oC VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25 C VGS = 10 V, ID = 26 A TJ = 125°C VGS = 4.5 V, ID = 21 A ID(on) ID(on) gFS On-State Drain Current On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 1)
o
OFF CHARACTERISTICS 30 37 10 100 -100 1 1.6 -4 0.0095 0.014 0.015 60 15 37 1230 640 175 VDD = 15 V, ID = 52 A VGS = 10 V, RGEN = 24 7.6 150 29 17 VDS= 12 V ID = 26 A, VGS = 10 V 34 6 8 52
(Note 1)
BVDSS/TJ Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse
(Note 1)
mV/oC µA nA nA V mV/oC 0.0135 0.023 0.02 A A S pF pF pF 15 210 46 27 46 nS nS nS nS nC nC nC A V
ON CHARACTERISTICS
Gate Threshold Voltage Gate Threshold Voltage Temp.Coefficient Static Drain-Source On-Resistance
3
VGS(th)/TJ
RDS(ON)
VGS = 10 V, VDS = 10 V VGS = 4.5 V, VDS = 10 V VDS = 10 V, ID = 26 A VDS = 15 V, VGS = 0 V, f = 1.0 MHz
DYNAMIC CHARACTERISTICS
Ciss Coss Crss
tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD
SWITCHING CHARACTERISTICS Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 26 A 0.91 0.8 TJ = 125°C
Note 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
1.3 1.2
FDP6030L Rev.C1
Typical Electrical Characteristics
100 ID , DRAIN-SOURCE CURRENT (A)
80
7.0 6.0
5.0
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 10V
5.5
3
2.5
V GS =3.5V 4.0
4.5
60
2
40
4.0
4.5
1.5
5.0
5.5
20
3.5 3.0
6.0
7.0
1
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0.5
VDS , DRAIN-SOURCE VOLTAGE (V)
0
20
40 60 I D , DRAIN CURRENT (A)
80
100
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.05
1.8 DRAIN-SOURCE ON-RESISTANCE
I D = 26A
1.6 1.4 1.2 1 0.8 0.6 -50
ID = 26A
R DS(ON) , ON-RESISTANCE (OHM)
R DS(ON) ,NORMALIZED
V GS = 10V
0.04
0.03
0.02
TA = 125°C
0.01
25°C
-25
0
25
50
75
100
125
150
175
0
TJ , JUNCTION TEMPERATURE (°C)
2
4
6
8
10
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
60
60
VDS = 10V
I D , DRAIN CURRENT (A) 50 40 30 20 10 0
TA = -55°C
25°C 125°C
I S , REVERSE DRAIN CURRENT (A)
VGS =0V TA= 125°C 25°C
10 1 0.1 0.01 0.001 0.0001
-55°C
1
2
3
4
5
VGS , GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6 . Body Diode Forward Voltage Variation with Source Current and Temperature.
FDP6030L Rev.C1
Typical Electrical Characteristics (continued)
10 VGS , GATE-SOURCE VOLTAGE (V)
4000
I D = 26A
CAPACITANCE (pF)
8
VDS = 6.0V 12V 24V
2000
Ciss
800
6
Coss
4
300
2
f = 1 MHz VGS = 0V
0 10 20 Qg , GATE CHARGE (nC) 30 40
Crss
1 3 10 30
0
100 0.1
0.3
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
300 200 I D , DRAIN CURRENT (A) 100 50 20 10 5 2 1 0.5 0.5
R
) (ON DS
3000
it Lim
VGS = 10V SINGLE PULSE RJC = 2 o C/W TC = 25 °C
1 3 5
10 ms 100 m DC s
POWER (W)
10µ s 100 µs 1ms
2500 2000 1500 1000 500 0 0.01
SINGLE PULSE R JC = 2 °C/W TC = 25°C
10
20
30
50
0.1
1
10
100
1,000
V DS , DRAIN-SOURCE VOLTAGE (V))
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
TRANSIENT THERMAL RESISTANCE
1 0.5 0.3 0.2 0.1
0.05 D = 0.5
r(t), NORMALIZED EFFECTIVE
0.2 0.1
R JC (t) = r(t) * RJC R JC = 2.0 °C/W
P(pk)
0.05 0.03 0.02
0.02 0.01 Single Pulse
t1
t2
TJ - TC = P * RJC (t) Duty Cycle, D = t1 /t2 0.1 0.5 1 5 t 1 ,TIME (ms) 10 50 100 500 1000
0.01 0.01
0.05
Figure 11. Transient Thermal Response Curve.
FDP6030L Rev.C1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLT TM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST ® FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench ® QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER ®
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET ®
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4
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