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Details, datasheet, quote on part number:FDP6035AL
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| Part: | FDP6035AL |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | N-channel Logic Level PowerTrench® MOSFET |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FDP6035AL datasheet File size : 431 kB |
| Request For quote: | Find where to buy FDP6035AL
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Datasheet text preview:
July 1998
FDP6035AL/FDB6035AL N-Channel Logic Level PowerTrenchTM MOSFET
General Description
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
48A, 30 V. RDS(ON) = 0.0125 @ VGS = 10 V, RDS(ON) = 0.017 @ VGS = 4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High performance trench technology for extremely low RDS(ON). 175°C maximum junction temperature rating.
_________________________________________________________________________________
D
G
S Absolute Maximum Ratings
Symbol VDSS VGSS ID PD TJ,TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1)
T C = 25°C unless otherwise noted
FDP6035AL 30 ±20 48 150 58 0.4 -65 to 175 275
FDB6035AL
Units V V A W W/°C °C °C
Total Power Dissipation @ TC = 25°C
THERMAL CHARACTERISTICS RJC RJA 2.6 62.5 °C/W °C/W
© 1998 Fairchild Semiconductor Corporation
FDP6035AL Rev.C
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol W DSS IAR Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Conditions VDD = 15 V, ID = 48 A Min Typ Max 130 48 Unit mJ A DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25 C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25 oC VGS = 10 V, ID = 24 A TJ = 125°C VGS = 4.5 V, ID = 20 A ID(on) gFS On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 1)
o
30 22 1 100 -100 1 1.5 -5 0.011 0.017 0.015 48 33 1650 365 170 0.0125 0.021 0.017 3
V mV/oC µA nA nA V mV/oC
BVDSS/TJ Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse
(Note 2)
ON CHARACTERISTICS
Gate Threshold Voltage Gate Threshold Voltage Temp.Coefficient Static Drain-Source On-Resistance
VGS(th)/TJ
RDS(ON)
VGS = 10 V, VDS = 10 V VDS = 10 V, ID = 24 A VDS = 15 V, VGS = 0 V, f = 1.0 MHz
A S pF pF pF 18 22 56 18 23 nS nS nS nS nC nC nC 48 150 1.05 23 0.74 1.3 40 1.3 A A V ns A
DYNAMIC CHARACTERISTICS
Ciss Coss Crss
tD(on) tr tD(off) tf Qg Qgs Qgd IS ISM VSD trr Irr
Notes
SWITCHING CHARACTERISTICS Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6
10 12 35 10
VDS = 15 V , ID = 48 A VGS = 5 V
17 6.2 6.8
DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current
(Note 1) (Note 1) (Note1)
VGS = 0 V, IS = 24 A VGS = 0 V, IF = 30 A dIF/dt = 100 A/µs
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
FDP6035AL Rev.C
Typical Electrical Characteristics
100 ID , DRAIN-SOURCE CURRENT (A)
R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 1 0 V
1.8 6.0V 5.0V 4.5V 4.0V 3.5V
80
VGS = 3.5V
1.5
4.0V 4.5V 5.0V 6.0V 10V
60
1.2
40
3.0V
20
0.9
2.5V
0 0 1 2 3 4 5
0.6
VDS , DRAIN-SOURCE VOLTAGE (V)
0
20
40
60
80
100
ID , DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.05
R DS(ON) , ON-RESISTANCE (OHM)
2 DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 0.6 -50
ID = 24A VGS = 10V
I D = 24A
0.04
R DS(ON) , NORMALIZED
0.03
0.02
TA = 125°C
0.01
TA = 25°C
2 4 6 8 V GS, GATE TO SOURCE VOLTAGE (V) 10
-25
0
25
50
75
100
125
150
175
0
TJ , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
60
V DS = 10V
I D , DRAIN CURRENT (A) 50 40 30 20 10 0
25°C 125°C
I S , REVERSE DRAIN CURRENT (A)
TA = -55°C
60 10 1 0.1 0.01 0.001 0.0001
V GS = 0V
TA = 125°C 25°C -55°C
1 V
2
GS
3
4
5
, GATE TO SOURCE VOLTAGE (V)
0
0.2 V
SD
0.4
0.6
0.8
1
1.2
1.4
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDP6035AL Rev.C
Typical Electrical Characteristics (continued)
10 V GS , GATE-SOURCE VOLTAGE (V)
3000
ID = 48A
8
V DS = 5V 15V 10V
CAPACITANCE (pF)
2000
C iss
1000
6
500
4
C oss
200
2
f = 1 MHz V GS = 0V
0.2 0.5 1 2 5 10
0
C rss
20 30
0
5
10
15 20 25 Q g , GATE CHARGE (nC)
30
35
100 0.1
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
300 100 50 20 10 5 2 1 0.5 0.3
it Lim
I D , DRAIN CURRENT (A)
R DS
N) (O
10 0µ s 1m s
POWER (W)
3000
2400
10 ms 10 0m s 1s DC
SINGLE PULSE R JA =2.6°C/W TA = 25°C
1800
VGS = 10V SINGLE PULSE o R JC= 2.6 C/W TC = 25 °C
0.5 1 3 5 10 20 40 60
1200
600
0 0.001
0.1
1
10
100
1,000
VDS , DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (mSEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1 TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.5 0.3 0.2 0.1 0.05
0.1 0.05 0.02 0.2
D = 0.5
R JC (t) = r(t) * RJC R JC = 2.6 °C/W
P(pk)
t1
Single Pulse
0.03 0.01 0.02 0.01 0.01
t2
TJ - TC = P * RJC (t) Duty Cycle, D = t1 /t2
0.1 1 t1 ,TIME (ms) 10 100 1000
Figure 11. Transient Thermal Response Curve.
FDP6035AL Rev.C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLT TM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST ® FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench ® QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER ®
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET ®
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS D e f i n i t i o n of Terms D a t a s h e e t Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4
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