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Details, datasheet, quote on part number:FDP603AL
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| Part: | FDP603AL |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | N-channel Logic Level Enhancement Mode Field Effect Transistor |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FDP603AL datasheet File size : 424 kB |
| Request For quote: | Find where to buy FDP603AL
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Datasheet text preview:
April 1998
FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
33 A, 30 V. RDS(ON) = 0.022 @ VGS=10 V RDS(ON) = 0.036 @ VGS=4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175°C maximum junction temperature rating.
_________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD TJ,TSTG TL Parameter Drain-Source Voltage
T C = 25°C unless otherwise noted
FDP603AL 30 ±20 33
(Note 1)
FDB603AL
Units V V A W W/°C °C °C
Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
100 50 0.33 -65 to 175 275
THERMAL CHARACTERISTICS RJC RJA 3 62.5 °C/W °C/W
© 1998 Fairchild Semiconductor Corporation
FDP603AL Rev.D
Electrical Characteristics
Symbol W DSS IAR BVDSS IDSS IGSSF IGSSR VGS(th) Parameter
T C = 25°C unless otherwise noted)
Conditions VDD = 15 V, ID = 12 A
Min
Typ
Max 100 12
Unit mJ A V
DRAIN-SOURCE AVALANCHE RATINGS (Note 1) Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25 C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25 oC VGS = 10 V, ID = 25 A TJ =125 °C VGS = 4.5 V, ID = 10 A ID(on) ID(on) gFS On-State Drain Current On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 1)
o
OFF CHARACTERISTICS 30 32 10 100 -100 1 1.8 -4.5 0.018 0.026 0.03 60 15 24 670 345 95 VDD = 15 V, ID = 25 A VGS = 10 V, RGEN = 24 8 102 20 80 VDS = 10 V ID = 25 A, VGS = 10 V 19 3.5 5.5 25
(Note 1)
BVDSS/TJ Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse
(Note 1)
mV/oC µA nA nA V mV/oC 0.022 0.035 0.036 A A S pF pF pF 16 140 36 115 26 nS nS nS nS nC nC nC A V
ON CHARACTERISTICS
Gate Threshold Voltage Gate Threshold Voltage Temp.Coefficient Static Drain-Source On-Resistance
3
VGS(th)/TJ
RDS(ON)
VGS = 10 V, VDS = 10 V VGS = 4.5 V, VDS = 10 V VDS = 10 V, ID = 25 A VDS = 15 V, VGS = 0 V, f = 1.0 MHz
DYNAMIC CHARACTERISTICS
Ciss Coss Crss
tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD
SWITCHING CHARACTERISTICS Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 25 A 1 0.85 TJ = 125°C
Note 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
1.3 1.1
FDP603AL Rev.D
Typical Electrical Characteristics
80 I D , DRAIN-SOURCE CURRENT (A)
3 DRAIN-SOURCE ON-RESISTANCE
V
GS
=10V
8.0 7.0
V
2.5
6.0
R DS(ON) , NORMALIZED
GS
= 4.0V 4.5 5.0 6.0
60
5.0
40
2
4.5
20
1.5
7.0
4.0 3.0
8.0
1
10
0
0
1
2
3
4
5
0.5
VDS , DRAIN-SOURCE VOLTAGE (V)
0
20
40 I D , DRAIN CURRENT (A)
60
80
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.06
R DS(ON) , ON-RESISTANCE (OHM)
1.8 DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50
R DS(ON) , NORMALIZED
ID = 25A V GS = 10V
ID= 12.5A
0.05
0.04
0.03
TJ = 125°C 25°C
0.02
-25
0
25
50
75
100
125
150
175
0.01
TJ , JUNCTION TEMPERATURE (°C)
3
4
5
6
7
8
9
10
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
30
20 I S , REVERSE DRAIN CURRENT (A)
V DS = 10V
ID , DRAIN CURRENT (A) 25 20 15 10 5 0
VGS = 0V
1 0.1 0.01 0.001 0.0001
TJ = 125°C 25°C -55°C
T = 125°C J -55°C
1 2 3
25°C
4
5
VGS , GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6 . Body Diode Forward Voltage Variation with Source Current and Temperature.
FDP603AL Rev.D
Typical Electrical Characteristics (continued)
10 V GS , GATE-SOURCE VOLTAGE (V)
2000
I D = 25A
CAPACITANCE (pF)
8
VDS = 5.0V 10V
1000
20V
Ciss
500
6
Coss
200
4
2
100
0 0 5 10 Q g , GATE CHARGE (nC) 15 20
f = 1 MHz VGS = 0V
0.3 1 4 10
Crss
30
60 0.1
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
200 100 I D , DRAIN CURRENT (A) 50 20 10 5 2 1 0.5 0.5
R
N) (O DS
2000
it Lim
10 0µ s 10 µs
POWER (W)
1600
1m s
SINGLE PULSE R JC =3.0° C/W TC = 25°C
VGS = 10V SINGLE PULSE RJC = 3 o C/W TA = 25 °C
1 3 5
10m 100 s m DC s
1200
800
400
10
20
30
50
0 0.01
0.1
1
10
100
1000
V DS , DRAIN-SOURCE VOLTAGE (V))
SINGLE PULSE TIME (ms)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1 TRANSIENT THERMAL RESISTANCE 0.5 0.3 0.2 0.1
0.05 D = 0.5
r(t), NORMALIZED EFFECTIVE
0.2 0.1 P(pk)
R JC (t) = r(t) * RJC R JC = 3.0 °C/W
0.05 0.03 0.02 0.01 0.01
0.02 0.01 Single Pulse
t1
t2
TJ - T C = P * R JC (t) Duty Cycle, D = t 1 /t2 0.1 0.5 1 5 t1 , TIME (ms) 10 50 100 500 1000
0.05
Figure 11. Transient Thermal Response Curve.
FDP603AL Rev.D
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