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Details, datasheet, quote on part number:FDS6982
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| Part: | FDS6982 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | Dual N-channel Notebook Power Supply MOSFET |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FDS6982 datasheet File size : 137 kB |
| Request For quote: | Find where to buy FDS6982
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Datasheet text preview:
FDS6982
June 1999
FDS6982
Dual N-Channel, Notebook Power Supply MOSFET
General Description
This part is designed to replace two single SO-8 MOSFETs in synchronous DC:DC power supplies that provide the various peripheral voltage rails required in notebook computers and other battery powered electronic devices. FDS6982 contains two unique 30V, N-channel, logic level, PowerTrench® MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized for low conduction losses (less than 20m at VGS = 4.5V).
Features · Q2: 8.6A, 30V. RDS(on) = 0.015 @ VGS = 10V
RDS(on) = 0.020 @ VGS = 4.5V
· Q1: 6.3A, 30V. RDS(on) = 0.028 @ VGS = 10V
RDS(on) = 0.035 @ VGS = 4.5V
· Fast switching speed. · High performance trench technology for extremely
low RDS(ON).
Applications · Battery powered synchronous DC:DC converters. · Embedded DC:DC conversion.
D1 D1 D2 D2 G1
5 6 7
Q1
4 3 2
SO-8
pin 1
S2
G2
S1
Q2
8
1
Absolute Maximum Ratings
Sym b o l
V DSS V G SS ID PD
T A = 25°C unless otherwise noted
P a ra m e t e r
Drain-S ource Voltage G ate-S ource Voltage Drain Current - Continuous - Pulsed P ower Dissipation for Dual Operation P ower Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c) (Note 1a)
Q2
30 ± 20 8.6 30 2 1.6 1 0.9 -55 to +150
Q1
30 ± 20 6.3 20
U n it s
V V A W
T J, T stg
O perating and Storage Junction Temperature Range
°C
Therm al Characteristics
R JA R JC Therm al Resistance, Junction-to-Ambient Therm al Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
°C /W °C /W
Package Marking and Ordering Information
Device Marking
F DS 6982
1999 Fairchild Semiconductor Corporation
D e v ic e
FDS6982
Reel Size
13"
Tape Width
12mm
Q u a n tity
2500 units
FDS6982, Rev. D1
FDS6982
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C Q2 Q1 Q2 Q1 All A ll A ll 30 30 27 26 1 100 -100 V m V / °C µA nA nA
Zero Gate Voltage Drain VDS = 24 V, VGS = 0 V Current Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V
(Note 2)
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 8.6 A VGS = 10 V, ID = 8.6 A, TJ = 125°C VGS = 4.5 V, ID = 7.5 A VGS = 10 V, ID = 6.3 A VGS = 10 V, ID = 6.3 A, TJ = 125°C VGS = 4.5 V, ID = 5.6 A VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 8.6 A VDS = 5 V, ID = 6.3 A
Q2 Q1 Q2 Q1 Q2
1 1
2.2 1.6 -5 -4 0.012 0.018 0.016 0.021 0.038 0.028
3 3
V m V / °C
Q1
0.015 0.024 0.020 0.028 0.047 0.035
A
ID(on) gFS
On-State Drain Current Forward Transconductance
Q2 Q1 Q2 Q1
30 20 50 40
S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10 V, VGS = 0 V, f = 1.0 MHz Q2 Q1 Q2 Q1 Q2 Q1 2085 760 420 160 160 70 pF pF pF
FDS6982, Rev. D1
FDS6982
Electrical Characteristics
Symbol Parameter
(continued)
TA = 25°C unless otherwise noted
Test Conditions
(Note 2)
Type Min
Typ
Max Units
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6
Q2 VDS = 15 V, ID = 8.6 A, VGS = 5 V Q1 VDS = 15 V, ID = 6.3 A,VGS = 5 V
Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1
15 10 11 14 36 21 18 7 18.5 8.5 7.3 2.4 6.2 3.1
27 18 20 25 58 34 29 14 26 12
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A VGS = 0 V, IS = 1.3 A Voltage
(Note 2) (Note 2)
Q2 Q1 Q2 Q1
0.72 0.74
1.3 1.3 1.2 1.2
A V
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.Thermal rating based on independant single device opperation.
a) 78° C/W when mounted on a 0.5 in2 pad of 2 oz. copper.
b) 125° C/W when mounted on a 0.02 in2 pad of 2 oz. copper.
c) 135° C/W when mounted on a minimum p a d .
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDS6982, Rev. D1
FDS6982
Typical Characteristics: Q2
50
2
VGS = 10V
40
5.0V 4.5V
1.8 1.6 1.4 VGS = 4.0V 4.5V 5.0V 1.2 6.0V 7.0V 1 10V
30
4.0V
20 3.5V
10
0 0 1 2
3.0V 3 4
0.8 0 10 20 30 40 50 ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1 .6
ID = 8.6A VGS = 10V
0.04
ID = 4.5A
0.03
1 .4
1 .2
0.02
TA = 125 C
o
1
0.01
TA = 25 C
o
0 .8
0 .6 -50 -25 0 25 50 75 100
o
0
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
50 VDS = 5V 40
TA = -55 C
o
100
25 C 125 C
o
o
VGS = 0V 10 1 TA = 125 C 25 C 0.1 -55 C 0.01 0.001 0.0001
o o o
30
20
10
0 1 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V)
0
0.4
0.8
1.2
1.6
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6982, Rev. D1
FDS6982
Typical Characteristics: Q2
(continued)
10 ID = 8.6A 8 VDS = 5V 15V 10V
3000 2500 2000 CISS f = 1MHz V GS = 0 V
6 1500 4 1000 2 500 0 0 5 10 15 20 25 30 35 0 5 10 15 Qg, GATE CHARGE (nC)
COSS CRSS 20 25 30
0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
100 RDS(ON) LIMIT 10 100µs 1ms 10ms 100ms 1s 10s
30 SINGLE PULSE 25 20 15 10 5 0 0.1 1 10 100 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) RJA = 135 C/W TA = 25 C
o o
1 DC 0.1 VGS = 10V SINGLE PULSE RJA = 135 C/W TA = 25 C 0.01
o o
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
FDS6982, Rev. D1
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