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Part: FDS6986S
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: Dual Notebook Power Supply N-channel Powertrench SyncFET
Company: Fairchild Semiconductor
Datasheet: Download FDS6986S datasheet File size : 117 kB
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Datasheet text preview:
FDS6986S
September 2002
FDS6986S
Dual Notebook Power Supply N-Channel PowerTrench SyncFETTM
General Description
The FDS6986S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6986S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.
Features
· Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode RDS(on) = 20 m @ VGS = 10V RDS(on) = 28 m @ VGS = 4.5V · Q1: Optimized for low switching losses Low gate charge (6.5 nC typical) RDS(on) = 29 m @ VGS = 10V RDS(on) = 38 m @ VGS = 4.5V
7.9A, 30V
6.5A, 30V
D
D
1 /S D2 1 /S D2
D
D
5 6 7
Q2
4 3
D1
D1
Q1
2 1
SO-8
G S1
Pin 1 S O - 8
S
S
S
G S2 1 2 /D
G
8
2
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage
TA = 25°C unless otherwise noted
Parameter
Q2
30
(Note 1a)
Q1
30 ±16 6.5 20 2 1.6 1 0.9 -55 to +150
Units
V V A W
- Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation
Drain Current
±20 7.9 30
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS6986S
2002 Fairchild Semiconductor Corporation
Device FDS6986S
Reel Size 13"
Tape width 12mm
Quantity 2500 units
FDS6986S Rev C1(W)
FDS6986S
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF I G SSR
TA = 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward
Test Conditions
VGS = 0 V, ID = 1 mA VGS = 0 V, ID = 250 uA ID = 1 mA, Referenced to 25°C ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V
Type Min Typ Max Units
Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 30 30 20 23 500 1 100 100 V mV/°C µA NA nA
Off Characteristics
VGS = 20 V, VDS = 0 V VGS = 16 V, VDS = 0 V Gate-Body Leakage, Reverse VGS = 20 V, VDS = 0 V VGS = 16 V, VDS = 0 V
(Note 2)
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
VDS = VGS, ID = 1 mA VDS = VGS, ID = 250 µA ID = 1 mA, Referenced to 25°C ID = 250 uA, Referenced to 25°C VGS = 10 V, ID = 7.9 A VGS = 10 V, ID = 7.9 A, TJ = 125°C VGS = 4.5 V, ID = 7 A VGS = 10 V, ID = 6.5 A VGS = 10 V, ID = 6.5 A, TJ = 125°C VGS = 4.5 V, ID = 5.6 A VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 7.9 A VDS = 5 V, ID = 6.5 A VDS = 10 V, VGS = 0 V, f = 1.0 MHz
1 1
2.4 1.6 6 4 16 24 23 25 37 30
3 3
V mV/°C
20 32 28 29 49 38
m
ID(on) gFS
On-State Drain Current Forward Transconductance
Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1
30 20 23 22 1233 695 344 117 106 58 1.4 1.7
A S
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS = 15mV, f = 1.0 MHz pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
(Note 2)
VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6
Q2: VDS = 15 V, ID = 7.9 A, VGS = 5 V Q1: VDS = 15 V, ID = 6.5 A, VGS = 5 V
Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1
8 7 5 4.5 25 20 11 2.5 11 6.5 5 2.5 4 1.3
16 14 10 9 40 36 20 5 16 9
ns ns ns ns nC nC nC
FDS6986S Rev C1 (W)
Electrical Characteristics
Symbol
IS tRR QRR V SD
(continued)
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Type Min
Q2 Q1 Q2 Q2 Q1
Typ
Max Units
3.0 1.3 A ns nC 0.7 1.2 V
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Reverse Recovery Time Reverse Recovery Charge IF = 10 A, diF/dt = 300 A/µs 17 12.5 0.5 0.74
(Note 3) (Note 2) (Note 2)
Drain-Source Diode Forward VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 1.3 A Voltage
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
78°C/W when mounted on a 0.5in2 pad of 2 oz copper
b)
125°C/W when mounted on a 2 0.02 in pad of 2 oz copper
c)
135°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. See "SyncFET Schottky body diode characteristics" below.
FDS6986S Rev C1 (W)
FDS6986S
Typical Characteristics: Q2
50
2.6 VGS = 10V 6.0V 5.0V 4.5V 2.2 VGS = 4.0V
40
30 4.0V
1.8
4.5V 5.0V
20
1.4 6.0V 3.5V 1 8.0V 10V
10
0 0 1 2 3 VDS, DRAIN-SOURCE VOLTAGE (V)
0.6 0 10 20 30 40 50 ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.06
1.9
ID = 10A VGS = 10V
ID = 5A 0.05 0.04
1.6
1.3 0.03 1 0.02 0.7 TA = 25 C 0.01 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
o
TA = 125 C
o
0.4 -50 -25 0 25 50 75 100
o
125
150
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
50 VDS = 5V 40
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10 VGS = 0V
TA = -55 C
o
25 C 1 125 C TA = 125 C 25 C 0.1 -55 C
o o o
o
30
20 0.01 10 0.001 1.5 2.5 3.5 4.5 5.5 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V)
0 VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6986S Rev C1 (W)
FDS6986S
Typical Characteristics: Q2
10 ID =10A 8 VDS = 5V 15V 10V
2000 f = 1MHz VGS = 0 V 1600 CISS 1200
6
4
800 COSS CRSS
2
400
0 0 3 6 9 12 15 18 21 Qg, GATE CHARGE (nC)
0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 RDS(ON) LIMIT 100µs 10 10ms 100ms 1 DC 0.1 VGS = 10V SINGLE PULSE RJA = 135 C/W TA = 25 C 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 0
o o
Figure 8. Capacitance Characteristics.
50 SINGLE PULSE RJA = 135°C/W TA = 25°C
1ms
40
1s 10s
30
20
10
0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
FDS6986S Rev C1 (W)
Others parts begin by fd
FD-1 FD-2 FD-3 FD-4 FD-5 FD-6 FD-7
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