|
Details, datasheet, quote on part number:FDS6990A
| |
| Part: | FDS6990A |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | Dual N-channel Logic Level PowerTrench® MOSFET |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FDS6990A datasheet File size : 136 kB |
| Request For quote: | Find where to buy FDS6990A
|
| |
Datasheet text preview:
October 2002
F
Dual N-Channel Logic Level PowerTrench ® MOSFET
General Description Features
D S 6 9 90A
T h e s e N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
7.5 A, 30 V. R DS(ON) = 0.018 W R DS(ON) = 0.023 W Fast switching speed.
@ @
VGS = 10 V VGS = 4.5 V
Low gate charge (typical 18nC). High performance trench technology for extremely low R DS(ON). High power and current handling capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D1
D1
D2
D2
S FD 0A 9 69
pin 1
5 6
4 3 2 1
SO-8
S1
G1
S2
G2
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID
TA = 25 C unless otherwise noted
o
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
(Note 1a)
Ratings
30 ±20 7.5 20
(Note 1a) (Note 1b) (Note 1c)
Units
V V A
PD
Power Dissipation for Single Operation
2 1.6 0.9 -55 to 150
W
TJ , TSTG
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
R JA R J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
°C/W °C/W
©2002 Fairchild Semiconductor Corporation
FDS6990A Rev.C2
Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions
VGS = 0 V, ID = 250 µA
Min
30
Typ
Max
Units
V
OFF CHARACTERISTICS BVDSS DrainSource Breakdown Voltage BVDSS Breakdown Voltage Temperature Coefficient TJ
ID = 250 µA, Referenced to 25°C
20
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V,
VGS = 0 V
1
µA
TJ = 55°C
10
uA
IGSSF
GateBody Leakage, Forward
VGS = 20 V,
VDS = 0 V
100
nA
IGSSR
GateBody Leakage, Reverse
VGS = - 20 V,
VDS = 0 V
-100
nA
ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VGS(th) Gate Threshold Voltage TJ Temperature Coefficient RDS(on) Static DrainSource OnResistance
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C
1
1.5
3
V
-4
mV/°C
VGS = 10 V,
ID(on)
OnState Drain Current
VGS = 4.5 V, VGS = 10 V,
ID = 7.5 A TJ=125°C ID = 6.5 A VDS = 5 V
0.015 0.022 0.018
0.018 0.031 0.023
20
A
gFS
Forward Transconductance
VDS = 15 V,
ID = 7.5 A
24
S
DYNAMIC CHARACTERISTICS Ciss Input Capacitance
Coss
Output Capacitance
VDS = 15 V, f = 1.0 MHz
VGS = 0 V,
1650
pF
365
pF
Crss
Reverse Transfer Capacitance
170
pF
RG
Gate Resistance
(Note 2)
VGS = 15mV, f = 1.0 MHz
1.2
SWITCHING CHARACTERISTICS td(on) TurnOn Delay Time
tr
TurnOn Rise Time
VDD = 15 V, VGS = 10 V,
ID = 1 A, RGEN = 6
11
20
ns
9
18
ns
td(off)
TurnOff Delay Time
25
40
ns
tf
TurnOff Fall Time
11
20
ns
Qg
Total Gate Charge
Qgs
GateSource Charge
VDS = 15 V, VGS = 5 V
ID = 7.5 A,
18
25
nC
5.5
nC
Qgd
GateDrain Charge
6.7
nC
DRAINSOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward VGS = 0 V, IS = 1.3 A VSD (Note 2) Voltage
1.3
A
1.2
V
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 50° /W when C 2 mounted on a 1in pad of 2 oz copper
b) 105° /W when C 2 mounted on a .04 in pad of 2 oz copper
c) 125° /W when mounted C on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS6990A Rev. C2
Typical Electrical Characteristics
40 I D , DRAIN-SOURCE CURRENT (A) 3 DRAIN-SOURCE ON-RESISTANCE
VGS =10V 6.0V 4.5V
4.0V 3.5V
RDS(ON) , NORMALIZED
30
2.5
2
20
3.0V
V GS = 3.0V 3.5 V 4.5 V 6.0 V 10V
1.5
10
2.5V
0 0 0.5 V
DS
1
1
1.5
2
2.5
3
0.5
0
10
20 I D , DRAIN CURRENT (A)
30
40
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.6 DRAIN-SOURCE ON-RESISTANCE
0.1
RDS(ON) , NORMALIZED
1.4
I D = 7.5A V GS = 10V
R D S ( O N ), ON-RESISTANCE (OHM)
I D = 3.8A
0.08
1.2
0.06
1
0.04
125°C
0.02
0.8
25°C
0 0 2 4 6 8 10
0.6 -50
-25
0
25
50
75
100
125
150
TJ , JUNCTION TEMPERATURE (°C)
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
40
I S , REVERSE DRAIN CURRENT (A)
V DS =5.0V
I D , DRAIN CURRENT (A) 30
TJ = -55°C
30
25°C 125°C
10
VGS = 0V TJ= 125°C
1
25°C -55°C
20
0.1
10
0.01
0
1
2
3
4
5
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VGS , GATE TO SOURCE VOLTAGE (V)
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6990A Rev.C2
Typical Electrical Characteristics
10 VGS , GATE-SOURCE VOLTAGE (V) 4000
ID = 7.5A
8
CAPACITANCE (pF)
VD S = 5V 10V 15V
2000 1000 500
Ciss
6
4
Coss Crss f = 1 MHz V GS = 0 V
0.2 0.5 1 2 5 10 30
200 100 50 0.1
2
0
0
8 Q
16
24
32
40
g , GATE CHARGE (nC)
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
80 30 I D, DRAIN CURRENT (A) 10 2 0.5
RD S(O LIM N) IT
Figure 8. Capacitance Characteristics.
30
0.05 0.01 0.1
VGS =10V SINGLE PULSE RJA = 135°C/W A TA = 25°C
0.5 1 2
10 0m s 1s 10 s DC
POWER (W)
100 us 1m s 10m s
25 20 15 10 5 0 0.01
SINGLE PULSE R JA =135° C/W TA = 25°C
5
10
30
50
0.1
0.5
10
50 100
300
VDS , DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk)
R J A (t) = r(t) * R J A R J A =135° C/W
t1
t2
TJ - TA = P * R JA (t) Duty Cycle, D = t1 /t 2
100 300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS6990A Rev.C2
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTâ CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop
DISCLAIMER
ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrenchâ MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERâ OPTOLOGICâ SMART START OPTOPLANAR
SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFETâ VCX
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I1
|
|
