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Details, datasheet, quote on part number:FDS6990S
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Datasheet text preview:
FDS6990S
May 2001
FDS6990S
Dual 30V N-Channel PowerTrench® SyncFET TM
General Description
The FDS6990S is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. Each MOSFET includes integrated Schottky diodes using Fairchild's monolithic SyncFET technology. The performance of the FDS6990S as the low-side switch in a synchronous rectifier is similar to the performance of the FDS6990A in parallel with a Schottky diode.
Features
· 7.5A, 30 V. RDS(ON) = 22 m @ VGS = 10 V RDS(ON) = 30 m @ VGS = 4.5 V · · · Includes SyncFET Schottky diode Low gate charge (11 nC typical) High performance trench technology for extremely low RDS(ON) · High power and current handling capability
Applications
· DC/DC converter · Motor drives
D D2
DD2
DD 1 D D1
5 6
G1
Q1
4 3 2
SO-8
Pin 1 SO-8
7
Q2
S1 G G2 S S2 S S
8
1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
T A = 2 5 oC unless otherwise noted
Parameter
Ratings
30 ±20
(Note 1a)
Units
V V A W
7.5 20 2
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
1.6 1 0.9 55 to +150 °C
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS6990S
©2001 Fairchild Semiconductor Corporation
Device FDS6990S
Reel Size 13''
Tape width 12mm
Quantity 2500 units
FDS6990S Rev B(W)
FDS6990S
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR
T A = 25°C unless otherwise noted
Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 1 mA ID = 1 mA, Referenced to 25°C VD S = 24 V, VGS = 20 V, VGS = 20 V VGS = 0 V VD S = 0 V VD S = 0 V
Min
30
Typ
Max
Units
V
Off Characteristics
23 500 100 100 mV/°C µA nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance
VD S = VGS, ID = 1 mA ID = 1 mA, Referenced to 25°C VGS = VGS = VGS = VGS = 10 V, ID = 7.5 A 10 V, ID = 7.5 A, TJ =125°C 4.5 V, ID = 6.5 A 10 V, VD S = 5 V ID = 10 A
1
2.2 6 17.5 27 24
3
V mV/°C
22 35 30
m
ID(on) gFS
20 22
A S
VD S = 15 V,
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VD S = 15 V, f = 1.0 MHz
V GS = 0 V,
1233 344 106
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qg s Qg d TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
VD S = 15 V, VGS = 10 V,
ID = 1 A, RGEN = 6
8 5 25 11
16 10 40 20 16
ns ns ns ns nC nC nC
VD S = 15 V, VGS = 5 V
ID = 10 A,
11 5 4
DrainSource Diode Characteristics and Maximum Ratings
IS VSD trr Qrr Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward VGS = 0 V, IS = 2.9 A Voltage Diode Reverse Recovery Time IF = 10A diF/ dt = 300 A/µs Diode Reverse Recovery Charge 2.9
(Note 2)
A V nS nC
0.5 17 12.5
0.7
(Note 3)
Notes: 1. RJA is the sum of the junction-to-case and case -t o -ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
78°C/W when mounted on a 0.5in 2 pad of 2 oz copper
b)
125°C/W when mounted on a 0.02 in 2 pad of 2 oz copper
c)
135°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. See "SyncFET Schottky body diode characteristics" below.
FDS6990S Rev B (W)
FDS6990S
Typical Characteristics
VGS = 10V I D, DRAIN CURRENT (A) 40
6.0V
R DS(ON), NORMALIZED D R A I N - S O U R C E ON-RESISTANCE
50 5.0V 4.5V
2.6 VGS = 4.0V 2.2
30 4.0V 20
1.8
4.5V 5.0V
1.4 6.0V 8.0V 1 10V
10
3.5V
0 0 1 2 3 VDS, DRAIN-SOURCE VOLTAGE (V)
0.6 0 10 20 30 40 50 I D, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.06 R DS(ON), ON-RESISTANCE (OHM)
R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
1.9
I D = 7.5A VGS = 10V
I D = 3.8A 0.05 0.04 0.03 0.02 TA = 25 C 0.01 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
o
1.6
1.3
T A = 125 C
o
1
0.7
0.4 -50
-25
0
25
50
75
100
o
125
150
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
I S, REVERSE DRAIN CURRENT (A) 50 VDS = 5V ID , DRAIN CURRENT (A) 40
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10 VGS = 0V 1
o
TA = -55 C
o
25 C 125 C
o
TA = 125 C 25 C
o
30
0.1
-55 C
o
20
0.01
10
0 1.5
0.001 2.5 3.5 4.5 5.5 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6990S Rev B (W)
FDS6990S
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 10A 8 VDS = 5V 15V 10V C A P A C I T A N C E (pF)
2000 f = 1MHz VGS = 0 V 1600 CISS 1200
6
4
800 COSS 400 CRSS
2
0 0 3 6 9 12 15 18 21 Qg , GATE CHARGE (nC)
0 0 5 10 15 20 25 30 VD S, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
P(pk), PEAK TRANSIENT POWER (W) 100 R DS(ON) LIMIT ID , DRAIN CURRENT (A) 100µs 10 10ms 100ms 1 DC 0.1 VGS = 10V SINGLE PULSE o RJA = 135 C/W T A = 25 C 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V)
o
Figure 8. Capacitance Characteristics.
50 SINGLE PULSE RJA = 135°C/W T A = 25°C
1ms
40
1s 10s
30
20
10
0 0.001
0.01
0.1
1 t1 , TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05 0.02
R J A(t) = r(t) + R JA R JA = 135 °C/W P(pk) t1 t2 T J - TA = P * R J A( t ) Duty Cycle, D = t1 / t2
0.01
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
0.1 t 1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS6990S Rev B (W)
FDS6990S
Typical Characteristics
(continued)
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6990S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.
IDSS, REVERSE LEAKAGE CURRENT (A)
0.1 125 C 0.01
o
0.001
3A/div
0.0001
25 C
o
0V
0.00001 0 10 20 30 VDS, REVERSE VOLTAGE (V)
10ns/div
Figure 12. FDS6990S SyncFET body diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6990A).
Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature.
3A/div
0V
10ns/div
Figure 13. Non-SyncFET (FDS6990A) body diode reverse recovery characteristic.
FDS6990S Rev B (W)
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