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Details, datasheet, quote on part number:FDS6994S
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Datasheet text preview:
FDS6994S
September 2002
FDS6994S
Dual Notebook Power Supply N-Channel PowerTrench SyncFetTM
General Description
The FDS6994S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6994S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.
Features
· Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode RDS(on) = 15 m @ VGS = 10V RDS(on) = 17.5 m @ VGS = 4.5V · Q1: Optimized for low switching losses Low gate charge (85.5 nC typical) RDS(on) = 21 m @ VGS = 10V RDS(on) = 26 m @ VGS = 4.5V
8.2A, 30V
6.9A, 30V
D1 D1 D2 D2 S1 G1
5 6 7
Q1
4 3 2
Q2
SO-8
S2
8
1
G2
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage
TA = 25°C unless otherwise noted
Parameter
Q2
30
(Note 1a)
Q1
30 ±16 6.9 20 2 1.6 1 0.9 -55 to +150
Units
V V A W
- Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation
Drain Current
±16 8.2 30
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS6994S
2002 Fairchild Semiconductor Corporation
Device FDS6994S
Reel Size 13"
Tape width 12mm
Quantity 2500 units
FDS6994S Rev C(W)
FDS6994S
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS I G SS VGS(th) VGS(th) TJ
S(on)
TA = 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 1 mA VGS = 0 V, ID = 250 uA ID = 1 mA, Referenced to 25°C ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = ±16 V, VDS = 0 V VDS = VGS, ID = 1 mA VDS = VGS, ID = 250 µA ID = 1 mA, Referenced to 25°C ID = 250 uA, Referenced to 25°C VGS = 10 V, ID = 8.2A VGS = 10 V, ID = 8.2 A, TJ = 125°C VGS = 4.5 V, ID = 7.6 A VGS = 10 V, ID = 6.9 A VGS = 10 V, ID = 6.9 A, TJ = 125°C VGS = 4.5 V, ID = 6.2 A VGS = 10 V, VDS = 5 V VDS = 10 V, ID = 8.2 A VDS = 10 V, ID = 6.9 A VDS = 15 V, VGS = 0 V, f = 1.0 MHz
Type Min Typ Max Units
Q2 Q1 Q2 Q1 Q2 Q1 All Q2 Q1 Q2 Q1 Q2 Q1 30 30 23 24 500 1 ±100 1 1 1.5 1.9 2 5 10 15 11 16 24 19 3 3 V mV/°C µA nA
Off Characteristics
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
V mV/°C
15 24 17.5 21 33.5 26
m
ID(on) gFS
On-State Drain Current Forward Transconductance
Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1
30 20 42 41 2815 800 540 205 210 90 1.7 2.3
A S
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS = 15 mV, f = 1.0 MHz pF pF pF
FDS6994S Rev C (W)
Electrical Characteristics
Symbol Parameter
(continued)
TA = 25°C unless otherwise noted
Test Conditions
(Note 2)
Type Min
Typ
Max Units
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6
Q2: VDS = 15 V, ID = 7.9 A, VGS = 5 V Q1: VDS = 15 V, ID = 6.5 A, VGS = 5 V
Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q2
11 11 8 7 50 27 17 4 25 8 6 3 7 3
20 20 16 14 80 43 31 8 35 12
ns ns ns ns nC nC nC
DrainSource Diode Characteristics and Maximum Ratings
IS tRR QRR tRR QRR V SD
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
Maximum Continuous Drain-Source Diode Forward Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge IF = 8.2 A, diF/dt = 300 A/µs IF = 6.9 A, diF/dt = 100 A/µs
2.3 1.3 25 19 23 10 0.4 0.53 7 1.2
A ns nC ns nC V
(Note 3)
(Note 3) (Note 2) (Note 2)
Drain-Source Diode Forward VGS = 0 V, IS = 2.3 A VGS = 0 V, IS = 1.3 A Voltage
Q2 Q1
a)
78°C/W when mounted on a 2 0.5in pad of 2 oz copper
b)
125°C/W when mounted on a 2 0.02 in pad of 2 oz copper
c)
135°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. See "SyncFET Schottky body diode characteristics" below.
FDS6994S Rev C (W)
FDS6994S
Typical Characteristics for Q2
30
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 10V 3. 5V 3.0V 2. 5V
ID, DRAIN CURRENT (A)
4.5V
20
1.4
VGS = 3.0V
1.2
3.5V 4.0V 4. 5V 6.0V
10
1
10V
0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V)
0.8 0 10 20 30 ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.035 RDS(ON), ON-RESISTANCE (OHM)
1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID = 8.2A VGS = 10V
1.2
ID = 4.1A
0.03 0.025 0.02 0.015 0.01 0.005 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
TA = 25oC TA = 125oC
1
0.8
0.6 -50 -25 0 25 50 75
o
100
125
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
30 25 ID, DRAIN CURRENT (A) 20 15 TA = 125oC 10 5 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 25oC -55oC
IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10
VDS = 5V
VGS = 0V
1
TA = 125oC 25 o C
0.1
-55o C
0.01
0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6994S Rev C (W)
FDS6994S
Typical Characteristics for Q2
10 VGS, GATE-SOURCE VOLTAGE (V) ID =8.2A 8 20V 6 VDS = 10V 15V
4000 f = 1MHz VGS = 0 V CAPACITANCE (pF) 3000 Ciss 2000
4
2
1000 Crss
Coss
0 0 10 20 30 40 50 Qg, GATE CHARGE (nC)
0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
Figure 8. Capacitance Characteristics.
50
RDS(ON) LIMIT 100 µ s
ID, DRAIN CURRENT (A)
10
1ms 10ms 100ms 1s DC 10s
40
SINGLE PULSE RJA = 135°C/W TA = 25°C
30
1
VGS = 10V SINGLE PULSE RJA = 135oC/W TA = 25oC
20
0.1
10
0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V)
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05 0.02
RJA(t) = r(t) * RJA RJA = 135 °C/W P (pk ) t1 t2
SINGLE PULSE
0.01
0.01
T J - T A = P * R J A (t) Duty Cycle, D = t1 / t2
0.001 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS6994S Rev C (W)
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