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Part: FDS7060N7
Category:
Description: FDS7060N7 - 30V N-channel Powertrench MOSFET
Company: Fairchild Semiconductor
Datasheet: Download FDS7060N7 datasheet File size : 117 kB
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FDS7060N7
May 2003
FDS7060N7
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features
· 19 A, 30 V. RDS(ON) = 5 m @ VGS = 10 V RDS(ON) = 7 m @ VGS = 4.5 V · High performance trench technology for extremely low RDS(ON) · High power and current handling capability · Fast switching, low gate charge (35nC typical) · FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
· Synchronous rectifier · DC/DC converter
5 6 7 8
Bottom-sid e Dra in Contact
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 ± 20
(Note 1a)
Units
V V A W °C
19 60 3.0 55 to +150
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
40 0.5
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS7060N7 Device FDS7060N7 Reel Size 13'' Tape width 12mm Quantity 2500 units
2002 Fairchild Semiconductor Corporation
FDS7060N7 Rev C1 (W)
FDS7060N7
Electrical Characteristics
Symbol
EAS IAS BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on)
TA = 25°C unless otherwise noted
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current
Test Conditions
Single Pulse, VDD=30V, ID = 19A
Min
Typ
Max Units
360 19 mJ A
Drain-Source Avalanche Ratings (Note 2)
Off Characteristics
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = 20 V VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 19 A VGS = 4.5V, ID = 16 A VGS = 10 V, ID = 19 A,TJ = 125°C VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 19 A
30 23 1 100 100
V mV/°C µA nA nA
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance
1
1.5 4.7 4.0 5.8 6
3
V mV/°C
5 7 6.5
m
ID(on) gF S Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
60 78
A S
Dynamic Characteristics
Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, V GS = 0 V, f = 1.0 MHz
3274 721 283
pF pF pF
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
VDD = 15 V, ID = 1 A, VGS = 5 V, RGEN = 6
11 8 60 30
20 16 96 48 56
ns ns ns ns nC nC nC
VDS = 15 V, ID = 19 A, VG S = 5 V
35 10 12
FDS7060N7 Rev C1 (W)
FDS7060N7
Electrical Characteristics
Symbol
IS VSD
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
2.5 A V
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward VGS = 0 V, IS = 2.5 A Voltage
(Note 2)
0.7
1.2
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
40°C/W when mounted on a 1in2 pad of 2 oz copper
b)
85°C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS7060N7 Rev C1 (W)
FDS7060N7
Typical Characteristics
60 50 ID, DRAIN CURRENT (A) 40 30 20 2.5V 10 0 0 0.5 1 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 6.0V 4.0V 3.5V 3.0V 3.5 3 2.5 2 1.5 1 0.5 0 10 20 30 40 50 60 ID, DIRAIN CURRENT (A) 3.5 V 4.0V 4.5V 6.0V 10V VGS = 3.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.02 RDS(ON), ON-RESISTANCE (OHM)
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100
o
ID = 19A VGS = 10V
ID = 9.5A 0.015
0.01
TA = 125oC
0.005 TA = 25oC 0
125
150
175
2
4
6
8
10
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation withTemperature.
60 50 ID, DRAIN CURRENT (A) 40 30 TA = 125 C 20 25oC 10 -55oC 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V)
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 IS, REVERSE DRAIN CURRENT (A)
VDS = 5.0V
VGS = 0V 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125oC
25oC -55oC
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS7060N7 Rev C1 (W)
FDS7060N7
Typical Characteristics
10 -VGS, GATE-SOURCE VOLTAGE (V) ID = 19A 8 VDS = 5V 10V
CAPACITANCE (pF) 5000 f = 1 MHz VGS = 0 V CISS 4000
15V
6
3000
4
2000 CO S S CRSS
2
1000
0 0 10 20 30 40 50 60 70 Qg, GATE CHARGE (nC)
0 0 6 12 18 24 30 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 100µs 1ms 10ms 100ms DC VGS = 10V SINGLE PULSE RJA = 88oC/W TA = 25oC 0.01 0.01 1s P(pk), PEAK TRANSIENT POWER (W) 50
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE RJA = 88°C/W TA = 25°C
30
1
20
0.1
10
0.1
1
10
100
0 0.01
0.1
1 t1, TIME (sec)
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) + RJA RJA = 85 C/W P(pk) t1 t2
SINGLE PULSE
o
0.1
0.1 0.05 0.02
0.01
0.01
TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.001 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDS7060N7 Rev C1 (W)
Others parts begin by fd
FD-1 FD-2 FD-3 FD-4 FD-5 FD-6 FD-7
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