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Details, datasheet, quote on part number:FDS7064N7
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Datasheet text preview:
FDS7064N7
May 2003
FDS7064N7
30V N-Channel PowerTrench ® MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features
· 16.5 A, 30 V RDS(ON) = 7.0 m @ V GS = 4.5 V
· High performance trench technology for extremely low RDS(ON) · High power and current handling capability · Fast switching · BottomlessTM SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
· Synchronous rectifier · DC/DC converter
D S
DS
DS DS
D
5 6
Bot tom-s ide Dra in Contact
4 3 2 1
Bottomless SO-8
Pin 1 SO-8
G SG S S SS S
T A=25oC unless otherwise noted
7 8
Absolute Maximum Ratings
Symbol
V DSS VGSS ID PD TJ, TS T G Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
Parameter
Ratings
30 ± 12
(Note 1a)
Units
V V A W °C
16.5 60 3.0 55 to +150
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a)
40 0.5
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS7064N7 Device FDS7064N7 Reel Size 13'' Tape width 12mm Quantity 2500 units
©2003 Fairchild Semiconductor Corporation
FDS7064N7 Rev D (W)
FDS7064N7
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS (on) ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VS D
Notes:
TA = 25°C unless otherwise noted
Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 12 V, V DS = 0 V VGS = 12 V , V DS = 0 V VDS = V GS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 4.5 V, ID = 16.5 A VGS = 4.5 V, ID = 16.5 A ,TJ = 125°C VGS = 4.5 V, VDS = 5 V VDS = 5 V, ID = 16.5 A
Min
30
Typ
Max Units
V
Off Characteristics
23 1 100 100 mV/°C µA nA nA
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance
0.8
1.2 4.3 5.7 8.4
2
V mV/°C
7.0 10.5
m A
30 112
S
Dynamic Characteristics
Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, V GS = 0 V, f = 1.0 MHz
3355 522 209
pF pF pF
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
VDD = 15 V, ID = 1 A, VGS = 4.5 V, RGEN = 6
17 13 54 26
30 23 86 42 48
ns ns ns ns nC nC nC
VDS = 15 V, ID = 16.5 A, VGS = 4.5 V
30 6.3 7.7
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward VGS = 0 V, IS = 2.5 A Voltage 2.5
(Note 2)
A V
0.7
1.2
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R JC is guaranteed by design while R CA is determined by the user's board design.
a)
40°C/W when mounted on a 1in2 pad of 2 oz copper
b)
85°C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS7064N7 Rev D (W)
FDS7064N7
Typical Characteristics
3
V GS = 10V ID , DRAIN CURRENT (A) 50 40 30 4.5V 2.5V
3.5V 3.0V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
60
2.5
VGS = 2.0V
2 2.5V
2.0V 20 10 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V)
1.5
3.0V
3.5V
1
4.5V
10V
0.5 0 10 20 30 40 50 ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.018 RDS(ON), ON-RESISTANCE (OHM)
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 ID = 16.5A VGS = 10V
ID = 8A 0.014
0.01
TA = 125 C
o
0.006 TA = 25 C 0.002 1 2.5 4 5.5 7 8.5 10 VGS, GATE TO SOURCE VOLTAGE (V)
o
-25
0
25
50
75
100
o
125
150
175
T J, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation withTemperature.
60
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 IS, REVERSE DRAIN CURRENT (A) VGS = 0V 10 1 0.1 0.01 0.001 0.0001 TA = 125 C 25 C -55 C
o o o
V DS = 5V ID, DRAIN CURRENT (A) 50 40 30 T A = 125 C 20 25 C 10 0 1 1.25 1.5 1.75 2 2.25 2.5 VGS, GATE TO SOURCE VOLTAGE (V) -55 C
o o o
0
0.2
0.4
0.6
0.8
1
1.2
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS7064N7 Rev D (W)
FDS7064N7
Typical Characteristics
5 VGS, GATE-SOURCE VOLTAGE (V) ID = 16.5A 4 20V 3
CAPACITANCE (pF)
4500
VD S = 10V 15V
4000 3500 3000 2500 2000 1500 1000 500
C ISS
f = 1MHz VGS = 0 V
2
1
COSS CRSS 0 5 10 15 20 25 30
0 0 5 10 15 20 25 30 35 Qg, GATE CHARGE (nC)
0
VD S, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 100µs RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 1s 1 VGS = 10V SINGLE PULSE o RJA = 88 C/W TA = 25 C 0.01 0.01 0.1 1 10 100
o
Figure 8. Capacitance Characteristics.
50 P(pk), PEAK TRANSIENT POWER (W)
1ms 10ms 100ms DC
40
SINGLE PULSE RJA = 88°C/W TA = 25°C
30
20
0.1
10
0 0.01
0.1
1 t1, TIME (sec)
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
R JA (t) = r(t) + RJA R JA = 85 °C/W
0.1
0.1 0.05
P(pk)
0.02
t1 t2 TJ - T A = P * RJA(t) Duty Cycle, D = t1 / t2
S I N G L E PULSE
0.01
0.01
0.001 0.001
0.01
0.1
1 t 1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDS7064N7 Rev D (W)
FDS7064N7
Dimensional Outline and Pad Layout
FDS7064N7 Rev D (W)
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